Filter Your Search
1 - 10 of 6,767 results
|
MR4A16BCMA35
Everspin Technologies
|
$22.0794 | Yes | Active | 16.7772 Mbit | 16 | 1MX16 | 3.3 V | 35 ns | MRAM | 20 | 1 | 1000000 | 1.0486 M | ASYNCHRONOUS | PARALLEL | 9 mA | 3 V | 180 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | 35 ns | S-PBGA-B48 | Not Qualified | 5 | 85 °C | -40 °C | 260 | 40 | 48 | PLASTIC/EPOXY | LFBGA | BGA48,6X8,30 | SQUARE | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | BALL | 750 µm | BOTTOM | 1.35 mm | 10 mm | 10 mm | EVERSPIN TECHNOLOGIES INC | BGA | FBGA-48 | 48 | compliant | EAR99 | Everspin Technologies | |||||||
|
S71JL064H80BFW022
AMD
|
Check for Price | Yes | Transferred | 67.1089 Mbit | 16 | 4MX16 | 3 V | 85 ns | MEMORY CIRCUIT | SRAM IS ORGANIZED AS 512K X 16 / 1M X 8; FLASH CAN ALSO BE ORGANIZED AS 8M X 8 | FLASH+SRAM | 1 | 4000000 | 4.1943 M | ASYNCHRONOUS | 45 µA | 3.3 V | 2.7 V | CMOS | OTHER | R-PBGA-B73 | Not Qualified | e1 | 3 | 85 °C | -25 °C | 73 | PLASTIC/EPOXY | LFBGA | BGA73,10X12,32 | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.4 mm | 11.6 mm | 8 mm | ADVANCED MICRO DEVICES INC | BGA | LFBGA, BGA73,10X12,32 | 73 | compliant | EAR99 | 8542.32.00.71 | ||||||||||
|
SST32HF3242-70-4C-LFS
Silicon Storage Technology
|
Check for Price | No | Obsolete | 33.5544 Mbit | 16 | 2MX16 | 3 V | MEMORY CIRCUIT | SRAM IS ORGANIZED AS 256K X 16 | 1 | 2000000 | 2.0972 M | ASYNCHRONOUS | 3.3 V | 2.7 V | CMOS | COMMERCIAL | R-PBGA-B63 | Not Qualified | 70 °C | NOT SPECIFIED | NOT SPECIFIED | 63 | PLASTIC/EPOXY | LFBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.4 mm | 10 mm | 8 mm | SILICON STORAGE TECHNOLOGY INC | BGA | LFBGA, | 63 | unknown | EAR99 | 8542.32.00.71 | ||||||||||||||||
|
AM41DL3224GB85FT
Spansion
|
Check for Price | Yes | Obsolete | 33.5544 Mbit | 16 | 2MX16 | 3 V | MEMORY CIRCUIT | STATIC RAM IS ORGANISED AS 512K X 8 OR 2... more | 1 | 2000000 | 2.0972 M | ASYNCHRONOUS | 3.3 V | 2.7 V | CMOS | INDUSTRIAL | R-PBGA-B73 | Not Qualified | e1 | 3 | 85 °C | -40 °C | 73 | PLASTIC/EPOXY | LFBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.4 mm | 11.6 mm | 8 mm | SPANSION INC | BGA | LFBGA, | 73 | compliant | EAR99 | 8542.32.00.71 | ||||||||||||||
|
AM41DL1644DB85IT
Spansion
|
Check for Price | No | Obsolete | 16.7772 Mbit | 16 | 1MX16 | 3 V | 85 ns | MEMORY CIRCUIT | STATIC RAM IS ORGANISED AS 512K X 8 OR 2... more | FLASH+SRAM | 1 | 1000000 | 1.0486 M | ASYNCHRONOUS | 45 µA | 3.3 V | 2.7 V | CMOS | INDUSTRIAL | R-PBGA-B69 | Not Qualified | e0 | 3 | 85 °C | -40 °C | 260 | 69 | PLASTIC/EPOXY | LFBGA | BGA69,10X10,32 | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | TIN LEAD | BALL | 800 µm | BOTTOM | 1.4 mm | 11 mm | 8 mm | SPANSION INC | BGA | 8 X 11 MM, FBGA-69 | 69 | not_compliant | EAR99 | 8542.32.00.71 | |||||||||
|
KBE00D002M-F4070
Samsung Semiconductor
|
Check for Price | Obsolete | 268.4355 Mbit | 16 | 16MX16 | 1.8 V | MEMORY CIRCUIT | SDRAM IS ORGANIZED AS 2M X 16 X 4 BANKS | 1 | 16000000 | 16.7772 M | SYNCHRONOUS | 1.95 V | 1.65 V | CMOS | OTHER | R-PBGA-B137 | Not Qualified | 85 °C | -25 °C | 137 | PLASTIC/EPOXY | LFBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.4 mm | 13 mm | 10.5 mm | SAMSUNG SEMICONDUCTOR INC | BGA | LFBGA, | 137 | unknown | EAR99 | 8542.32.00.71 | ||||||||||||||||||
|
MT28C128532W18DFW-F706P85TTWT
Micron Technology Inc
|
Check for Price | Obsolete | 67.1089 Mbit | 16 | 4MX16 | MEMORY CIRCUIT | CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH | 1 | 4000000 | 4.1943 M | ASYNCHRONOUS | 1.95 V | 1.7 V | CMOS | OTHER | R-PBGA-B77 | Not Qualified | e1 | 85 °C | -25 °C | 77 | PLASTIC/EPOXY | LFBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.4 mm | 10 mm | 8 mm | MICRON TECHNOLOGY INC | BGA | LFBGA, | 77 | unknown | EAR99 | 8542.32.00.71 | |||||||||||||||||
|
MB84SD23280FA-70PBS-E1
Spansion
|
Check for Price | Yes | Obsolete | 67.1089 Mbit | 16 | 4MX16 | 1.8 V | MEMORY CIRCUIT | SRAM IS ORGANIZED AS 512K X 16 | 1 | 4000000 | 4.1943 M | ASYNCHRONOUS | 1.95 V | 1.65 V | CMOS | OTHER | R-PBGA-B73 | Not Qualified | e1 | 85 °C | -30 °C | 73 | PLASTIC/EPOXY | LFBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.34 mm | 11.6 mm | 8 mm | SPANSION INC | BGA | LFBGA, | 73 | compliant | EAR99 | 8542.32.00.71 | |||||||||||||||
|
S71JL064HA0BFW022
Spansion
|
Check for Price | Yes | Obsolete | 67.1089 Mbit | 16 | 4MX16 | 3 V | MEMORY CIRCUIT | STATIC RAM IS ORGANIZED AS 1M X 16 | 1 | 4000000 | 4.1943 M | ASYNCHRONOUS | 3.3 V | 2.7 V | CMOS | OTHER | R-PBGA-B73 | Not Qualified | e1 | 3 | 85 °C | -25 °C | 73 | PLASTIC/EPOXY | LFBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.4 mm | 11.6 mm | 8 mm | SPANSION INC | BGA | LFBGA, | 73 | compliant | EAR99 | 8542.32.00.71 | ||||||||||||||
|
S71JL128HB0BAW023
AMD
|
Check for Price | Yes | Transferred | 67.1089 Mbit | 16 | 4MX16 | 3 V | 85 ns | MEMORY CIRCUIT | PSRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 64M BIT FLASH | FLASH+PSRAM | 1 | 4000000 | 4.1943 M | ASYNCHRONOUS | 45 µA | 3.3 V | 2.7 V | CMOS | OTHER | R-PBGA-B73 | Not Qualified | 85 °C | -25 °C | NOT SPECIFIED | NOT SPECIFIED | 73 | PLASTIC/EPOXY | LFBGA | BGA73,10X12,32 | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.4 mm | 11.6 mm | 8 mm | ADVANCED MICRO DEVICES INC | BGA | LFBGA, BGA73,10X12,32 | 73 | compliant | EAR99 | 8542.32.00.71 |