Parametric results for: -28C-10 under EEPROMs

All Filters Access Time-Max Additional Feature Alternate Memory Width Clock Frequency-Max (fCLK) Command User Interface Data Polling Data Retention Time-Min Endurance I2C Control Byte JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Page Size Power Supplies Supply Voltage-Nom (Vsup) Access Time-Max (16)

15 ns 9 20 ns 8 25 ns 8 35 ns 8 70 ns 8 90 ns 138 100 ns 38 120 ns 184 150 ns 529 200 ns 685 250 ns 381 300 ns 63 350 ns 62 450 ns 36 700 ns 3 40 µs 2

Min (ns) - Max (ns)

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100 YEAR DATA RETENTION 1 10000 ERASE/WRITE CYCLES; DATA RETENTION = 10 YEARS 1 100000 ENDURANCE CYCLES; DATA RETENTION = 100 YEARS 11 100K ENDURANCE WRITE CYCLES; 10 YEARS DATA RETENTION; SELF-TIMED BYTE WRITE CYCLE 2 AUTOMATIC WRITE 388 AUTOMATIC WRITE; 10 YEARS DATA RETENTION 15 AUTOMATIC WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION = 10 YEARS 24 AUTOMATIC WRITE; 100K ENDURANCE WRITE CYCLES; DATA RETENTION = 10 YEARS 39 AUTOMATIC WRITE; 100K ENDURANCE WRITE CYCLES; DATA RETENTION > 10 YEARS 4 AUTOMATIC WRITE; 10K ENDURANCE WRITE CYCLES; DATA RETENTION = 10 YEARS 39 AUTOMATIC WRITE; BULK ERASE; 10K ERASE/WRITE CYCLES MIN.; 1MS BYTE WRITE; DATA RETENTION > 10 YEARS 69 AUTOMATIC WRITE; BULK ERASE; DATA RETENTION > 10 YEARS 60 AUTOMATIC WRITE; BYTE PROGRAMMABLE 1 AUTOMATIC WRITE; PAGE WRITE 19 AUTOMATIC WRITE; WRITE PROTECTION 24 BULK ERASE; AUTOMATIC WRITE 18 CONFIGURABLE AS 128K X 32 16 DATA RETENTION 10 YEASRS. 32 ENDURANCE >100000 WRITE/ERASE CYCLES; DATA RETENTION > 40 YEARS; 32 BYTE PAGE WRITE 42 HARDWARE & SOFTWARE DATA PROTECTION; DATA RETENTION 40 YEARS 6 HARDWARE & SOFTWARE DATA PROTECTION; DATA RETENTION > 200 YEARS; 100K ENDURANCE WRITE CYCLES 6 HARDWARE & SOFTWARE DATA PROTECTION; PAGE WRITE; CONFIGURABLE AS 128K X 32 4 LG-MAX 24 PAGE WRITE 71

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16 16

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Clock Frequency-Max (fCLK) (6)

100 kHz 2 400 kHz 2 500 kHz 2 1 MHz 2 2.1 MHz 2 3 MHz 2

Min (MHz) - Max (MHz)

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NO 1,537

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YES 1,633

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10 376 40 48 100 134 200 6

Min - Max

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10000.0 Write/Erase Cycles 899 100000.0 Write/Erase Cycles 457

Min (Write/EraseCycles) - Max (Write/EraseCycles)

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10100DDR 6

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R-CDIP-T24 24 R-CDIP-T28 48 R-CDIP-T40 16 R-CDSO-N8 6 R-CQCC-N32 179 R-GDIP-T24 85 R-GDIP-T28 57 R-GQCC-J32 24 R-PDIP-T24 202 R-PDIP-T28 130 R-PDSO-G24 288 R-PDSO-G28 314 R-PDSO-G32 1 R-PDSO-G8 2 R-PQCC-J32 454 R-XDIP-T24 79 R-XDIP-T28 65 R-XDSO-N8 6 R-XQCC-N32 79 R-XUUC-N25 3 R-XUUC-N40 9 R-XUUC-N42 2 S-CQCC-J68 8 S-CQCC-N44 15 S-CQFP-G68 2 S-PQCC-J68 12 S-XHIP-P66 10 S-XQCC-J68 6 X-XUUC-N24 2 X-XUUC-N26 3

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e0 1,274 e3 281

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8 mm 12 11.8 mm 73 13.95 mm 32 13.97 mm 505 13.995 mm 70 14.1732 mm 16 15.4 mm 252 15.4178 mm 8 16.55 mm 15 17.9 mm 186 18.4 mm 36 31 mm 1 31.685 mm 8 31.75 mm 22 31.875 mm 59 31.877 mm 9 31.9 mm 26 32 mm 2 32.07 mm 9 32.131 mm 23 32.15 mm 46 32.766 mm 32 35.43 mm 1 35.68 mm 24 36.02 mm 6 36.32 mm 14 36.703 mm 16 36.83 mm 12 36.95 mm 34 37.085 mm 6 37.25 mm 45 37.4 mm 6 37.84 mm 24 37.846 mm 8 50.755 mm 14

Min (mm) - Max (mm)

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Manufacturer (19)

Atmel Corporation 530 Catalyst Semiconductor 241 Electronic Designs Inc 26 Epson Electronics America Inc 1 Exel Microelectronics Inc 90 Force Technologies Ltd 139 LAPIS Semiconductor Co Ltd 3 Microchip Technology Inc 387 OKI Electric Industry Co Ltd 1 onsemi 264 Pyramid Semiconductor Corporation 152 Rochester Electronics LLC 41 ROHM Semiconductor 28 Samsung Semiconductor 24 Seiko Epson Corporation 1 STMicroelectronics 167 Vishay Semiconductors 16 White Electronic Designs Corp 12 Xicor Inc 74

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Memory Density (5)

1.024 kbit 2 16.384 kbit 2,078 131.072 kbit 12 1.0486 Mbit 43 4.1943 Mbit 38

Min (bit) - Max (bit)

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EEPROM 2,145 EEPROM CARD 1 EEPROM MODULE 36

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Memory Width (3)

8 2,111 16 42 32 18

Min - Max

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1 229 2 56 3 95 NOT SPECIFIED 2

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1.0 1,832

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24 680 25 3 26 3 28 614 32 737 40 25 42 2 44 15 66 10 68 28 8 14

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2.048 k 2,078 16.384 k 12 65.536 k 42 131.072 k 19 524.288 k 20

Min (words) - Max (words)

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2000.0 2,078 16000.0 12 64000.0 42 128000.0 19 512000.0 20

Min - Max

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ASYNCHRONOUS 1,820 SYNCHRONOUS 12

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70.0 °C 776 85.0 °C 753 105.0 °C 131 125.0 °C 513

Min (°C) - Max (°C)

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-55.0 °C 459 -40.0 °C 938 -20.0 °C 2 0.0 °C 774

Min (°C) - Max (°C)

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Organization (6)

128KX32 18 128KX8 1 16KX8 12 2KX8 2,078 512KX8 20 64KX16 42

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3-STATE 811 OPEN-DRAIN 72

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CERAMIC 228 CERAMIC, GLASS-SEALED 166 CERAMIC, METAL-SEALED COFIRED 298 PLASTIC/EPOXY 1,403 UNSPECIFIED 36

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DIE 19 DIP 716 HQCCJ 24 LSSOP 25 QCCJ 476 QCCN 289 SOP 483 TSON 12 TSOP1 84 TSSOP 11

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DIE OR CHIP 9 DIP24(UNSPEC) 1 DIP24,.3 19 DIP24,.6 313 DIP28,.6 250 DIP40,.6 17 LCC32,.45X.55 232 LCC44,.65SQ 15 LDCC32,.5X.6 323 LDCC68,1.0SQ 24 SO24(UNSPEC) 6 SOLCC8,.3 12 SOP24,.4 158 SOP24,.45 42 SOP24,.5 16 SOP28,.4 107 SOP28,.45 12 SOP8,.25 2 TAB(UNSPEC) 8 TSSOP28,.53,22 54 TSSOP28/32,.8,20 24 TSSOP32,.8,20 1 WAFER 2

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RECTANGULAR 2,073 SQUARE 53 UNSPECIFIED 5

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CHIP CARRIER 753 CHIP CARRIER, HEAT SINK/SLUG 24 FLATPACK 2 IN-LINE 716 SMALL OUTLINE 485 SMALL OUTLINE, LOW PROFILE, SHRINK PITCH 25 SMALL OUTLINE, THIN PROFILE 96 SMALL OUTLINE, THIN PROFILE, SHRINK PITCH 11 UNCASED CHIP 19

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128 words 25 16 words 66 32 words 62 64 words 190

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Power Supplies (2)

3/3.3 V 6 5 V 35

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Supply Voltage-Nom (Vsup) (4)

2.5 V 4 3 V 33 3.3 V 4 5 V 2,119

Min (V) - Max (V)

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