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MSM8512G-85
Mosaic Semiconductor Inc
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Check for Price | Obsolete | 4.1943 Mbit | 8 | 512KX8 | 5 V | 85 ns | STANDARD SRAM | 1 | 1 | 512000 | 524.288 k | ASYNCHRONOUS | YES | PARALLEL | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-CDFP-F32 | Not Qualified | 70 °C | 32 | CERAMIC, METAL-SEALED COFIRED | DFP | RECTANGULAR | FLATPACK | YES | FLAT | DUAL | MOSAIC SEMICONDUCTOR INC | , | unknown | 3A991.B.2.A | 8542.32.00.41 | ||||||||||||||||||||||||
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MSM8512G-85
APTA Group Inc
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Check for Price | No | Obsolete | 4.1943 Mbit | 8 | 512KX8 | 5 V | 85 ns | STANDARD SRAM | COMMON | 512000 | 524.288 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 2 mA | 4.5 V | 90 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PDFP-F32 | Not Qualified | e0 | 70 °C | 32 | PLASTIC/EPOXY | DFP | FL32,.4 | RECTANGULAR | FLATPACK | YES | Tin/Lead (Sn/Pb) | FLAT | 1.27 mm | DUAL | APTA GROUP INC | DFP, FL32,.4 | unknown | 3A991.B.2.A | 8542.32.00.41 | |||||||||||||||||
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709279L12G8
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Obsolete | 524.288 kbit | 16 | 32KX16 | 5 V | 12 ns | 50 MHz | APPLICATION SPECIFIC SRAM | FLOW-THROUGH OR PIPELINED ARCHITECTURE | COMMON | 1 | 2 | 32000 | 32.768 k | SYNCHRONOUS | 3-STATE | PARALLEL | 5 mA | 4.5 V | 305 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | X-CPGA-P108 | Not Qualified | e3 | 3 | 70 °C | 260 | 30 | 108 | CERAMIC, METAL-SEALED COFIRED | PGA | QFP100,.63SQ,20 | UNSPECIFIED | GRID ARRAY | NO | Matte Tin (Sn) - annealed | PIN/PEG | 500 µm | PERPENDICULAR | INTEGRATED DEVICE TECHNOLOGY INC | PGA-108 | compliant | 3A991.B.2.B | 8542.32.00.41 | |||||||||
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KM658512G-8
Samsung Semiconductor
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Check for Price | No | No | Obsolete | 4.1943 Mbit | 8 | 512KX8 | 5 V | 80 ns | PSEUDO STATIC RAM | COMMON | 1 | 1 | 512000 | 524.288 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | YES | 4.5 V | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PDSO-G32 | Not Qualified | e0 | 70 °C | 32 | PLASTIC/EPOXY | SOP | SOP32,.56 | RECTANGULAR | SMALL OUTLINE | YES | TIN LEAD | GULL WING | 1.27 mm | DUAL | 3 mm | 20.475 mm | 11.43 mm | SAMSUNG SEMICONDUCTOR INC | SOP, SOP32,.56 | unknown | 3A991.B.2.A | 8542.32.00.41 | SOIC | 32 | |||||||||
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709279S12G8
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Obsolete | 524.288 kbit | 16 | 32KX16 | 5 V | 12 ns | 50 MHz | APPLICATION SPECIFIC SRAM | FLOW-THROUGH OR PIPELINED ARCHITECTURE | COMMON | 1 | 2 | 32000 | 32.768 k | SYNCHRONOUS | 3-STATE | PARALLEL | 15 mA | 4.5 V | 345 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | X-CPGA-P108 | Not Qualified | e3 | 3 | 70 °C | 260 | 30 | 108 | CERAMIC, METAL-SEALED COFIRED | PGA | QFP100,.63SQ,20 | UNSPECIFIED | GRID ARRAY | NO | Matte Tin (Sn) - annealed | PIN/PEG | 500 µm | PERPENDICULAR | INTEGRATED DEVICE TECHNOLOGY INC | PGA-108 | compliant | 3A991.B.2.B | 8542.32.00.41 | |||||||||
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709269S12G8
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Obsolete | 262.144 kbit | 16 | 16KX16 | 5 V | 12 ns | 50 MHz | APPLICATION SPECIFIC SRAM | FLOW-THROUGH OR PIPELINED ARCHITECTURE | COMMON | 1 | 2 | 16000 | 16.384 k | SYNCHRONOUS | 3-STATE | PARALLEL | 15 mA | 4.5 V | 345 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | X-CPGA-P108 | Not Qualified | e3 | 3 | 70 °C | 260 | 30 | 108 | CERAMIC, METAL-SEALED COFIRED | PGA | QFP100,.63SQ,20 | UNSPECIFIED | GRID ARRAY | NO | Matte Tin (Sn) - annealed | PIN/PEG | 500 µm | PERPENDICULAR | INTEGRATED DEVICE TECHNOLOGY INC | PGA-108 | compliant | EAR99 | 8542.32.00.41 | |||||||||
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709269L12G8
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Obsolete | 262.144 kbit | 16 | 16KX16 | 5 V | 12 ns | 50 MHz | APPLICATION SPECIFIC SRAM | FLOW-THROUGH OR PIPELINED ARCHITECTURE | COMMON | 1 | 2 | 16000 | 16.384 k | SYNCHRONOUS | 3-STATE | PARALLEL | 5 mA | 4.5 V | 305 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | X-CPGA-P108 | Not Qualified | e3 | 3 | 70 °C | 260 | 30 | 108 | CERAMIC, METAL-SEALED COFIRED | PGA | QFP100,.63SQ,20 | UNSPECIFIED | GRID ARRAY | NO | Matte Tin (Sn) - annealed | PIN/PEG | 500 µm | PERPENDICULAR | INTEGRATED DEVICE TECHNOLOGY INC | PGA-108 | compliant | EAR99 | 8542.32.00.41 |