Parametric results for: 12G821K under SRAMs

Filter Your Search

1 - 7 of 7 results

|
-
-
-
-
-
Manufacturer Part Number: 12g8
Select parts from the table below to compare.
Compare
Compare
MSM8512G-85
Mosaic Semiconductor Inc
Check for Price Obsolete 4.1943 Mbit 8 512KX8 5 V 85 ns STANDARD SRAM 1 1 512000 524.288 k ASYNCHRONOUS YES PARALLEL 5.5 V 4.5 V CMOS COMMERCIAL R-CDFP-F32 Not Qualified 70 °C 32 CERAMIC, METAL-SEALED COFIRED DFP RECTANGULAR FLATPACK YES FLAT DUAL MOSAIC SEMICONDUCTOR INC , unknown 3A991.B.2.A 8542.32.00.41
MSM8512G-85
APTA Group Inc
Check for Price No Obsolete 4.1943 Mbit 8 512KX8 5 V 85 ns STANDARD SRAM COMMON 512000 524.288 k ASYNCHRONOUS 3-STATE PARALLEL 2 mA 4.5 V 90 µA 5.5 V 4.5 V CMOS COMMERCIAL R-PDFP-F32 Not Qualified e0 70 °C 32 PLASTIC/EPOXY DFP FL32,.4 RECTANGULAR FLATPACK YES Tin/Lead (Sn/Pb) FLAT 1.27 mm DUAL APTA GROUP INC DFP, FL32,.4 unknown 3A991.B.2.A 8542.32.00.41
709279L12G8
Integrated Device Technology Inc
Check for Price Yes Yes Obsolete 524.288 kbit 16 32KX16 5 V 12 ns 50 MHz APPLICATION SPECIFIC SRAM FLOW-THROUGH OR PIPELINED ARCHITECTURE COMMON 1 2 32000 32.768 k SYNCHRONOUS 3-STATE PARALLEL 5 mA 4.5 V 305 µA 5.5 V 4.5 V CMOS COMMERCIAL X-CPGA-P108 Not Qualified e3 3 70 °C 260 30 108 CERAMIC, METAL-SEALED COFIRED PGA QFP100,.63SQ,20 UNSPECIFIED GRID ARRAY NO Matte Tin (Sn) - annealed PIN/PEG 500 µm PERPENDICULAR INTEGRATED DEVICE TECHNOLOGY INC PGA-108 compliant 3A991.B.2.B 8542.32.00.41
KM658512G-8
Samsung Semiconductor
Check for Price No No Obsolete 4.1943 Mbit 8 512KX8 5 V 80 ns PSEUDO STATIC RAM COMMON 1 1 512000 524.288 k ASYNCHRONOUS 3-STATE YES PARALLEL YES 4.5 V 5.5 V 4.5 V CMOS COMMERCIAL R-PDSO-G32 Not Qualified e0 70 °C 32 PLASTIC/EPOXY SOP SOP32,.56 RECTANGULAR SMALL OUTLINE YES TIN LEAD GULL WING 1.27 mm DUAL 3 mm 20.475 mm 11.43 mm SAMSUNG SEMICONDUCTOR INC SOP, SOP32,.56 unknown 3A991.B.2.A 8542.32.00.41 SOIC 32
709279S12G8
Integrated Device Technology Inc
Check for Price Yes Yes Obsolete 524.288 kbit 16 32KX16 5 V 12 ns 50 MHz APPLICATION SPECIFIC SRAM FLOW-THROUGH OR PIPELINED ARCHITECTURE COMMON 1 2 32000 32.768 k SYNCHRONOUS 3-STATE PARALLEL 15 mA 4.5 V 345 µA 5.5 V 4.5 V CMOS COMMERCIAL X-CPGA-P108 Not Qualified e3 3 70 °C 260 30 108 CERAMIC, METAL-SEALED COFIRED PGA QFP100,.63SQ,20 UNSPECIFIED GRID ARRAY NO Matte Tin (Sn) - annealed PIN/PEG 500 µm PERPENDICULAR INTEGRATED DEVICE TECHNOLOGY INC PGA-108 compliant 3A991.B.2.B 8542.32.00.41
709269S12G8
Integrated Device Technology Inc
Check for Price Yes Yes Obsolete 262.144 kbit 16 16KX16 5 V 12 ns 50 MHz APPLICATION SPECIFIC SRAM FLOW-THROUGH OR PIPELINED ARCHITECTURE COMMON 1 2 16000 16.384 k SYNCHRONOUS 3-STATE PARALLEL 15 mA 4.5 V 345 µA 5.5 V 4.5 V CMOS COMMERCIAL X-CPGA-P108 Not Qualified e3 3 70 °C 260 30 108 CERAMIC, METAL-SEALED COFIRED PGA QFP100,.63SQ,20 UNSPECIFIED GRID ARRAY NO Matte Tin (Sn) - annealed PIN/PEG 500 µm PERPENDICULAR INTEGRATED DEVICE TECHNOLOGY INC PGA-108 compliant EAR99 8542.32.00.41
709269L12G8
Integrated Device Technology Inc
Check for Price Yes Yes Obsolete 262.144 kbit 16 16KX16 5 V 12 ns 50 MHz APPLICATION SPECIFIC SRAM FLOW-THROUGH OR PIPELINED ARCHITECTURE COMMON 1 2 16000 16.384 k SYNCHRONOUS 3-STATE PARALLEL 5 mA 4.5 V 305 µA 5.5 V 4.5 V CMOS COMMERCIAL X-CPGA-P108 Not Qualified e3 3 70 °C 260 30 108 CERAMIC, METAL-SEALED COFIRED PGA QFP100,.63SQ,20 UNSPECIFIED GRID ARRAY NO Matte Tin (Sn) - annealed PIN/PEG 500 µm PERPENDICULAR INTEGRATED DEVICE TECHNOLOGY INC PGA-108 compliant EAR99 8542.32.00.41