Parametric results for: 16x16­ under EEPROMs

All Filters Additional Feature Alternate Memory Width Clock Frequency-Max (fCLK) Data Retention Time-Min Endurance I2C Control Byte JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Page Size Parallel/Serial Power Supplies Supply Voltage-Nom (Vsup)

1 MILLION ERASE/WRITE CYCLES.; 40 YEARS DATA RETENTION; USER CONFIGURABLE 16 X 16 3 100 YEAR DATA RETENTION 12 100000 ERASE/WRITE CYCLES; DATA RETENTION = 10 YEARS 12 40 YEARS DATA RETENTION; MICROWIRE BUS INTERFACE 13 40 YEARS OF DATA RETENTION 74 AUTOMATIC WRITE 4 AUTOMATIC WRITE; 100K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 40 YEARS 12 AUTOMATIC WRITE; 10K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 40 YEARS 6 CONFIGURABLE AS 16 X 16 19 DATA RETENTION=40 YEARS 45 MICROWIRE BUS INTERFACE; 2.0V READ; AUTOMATIC WRITE 1 MICROWIRE BUS INTERFACE; 2.0V READ; AUTOMATIC WRITE; DATA RETENTION = 40 YEARS 2 MICROWIRE BUS INTERFACE; 2.0V READ; AUTOMATIC WRITE; ERAL AT 3.0V TO 5.5V; DATA RETENTION = 40 YEARS 14 MICROWIRE BUS INTERFACE; AUTOMATIC WRITE; 1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS 15 MICROWIRE BUS INTERFACE; AUTOMATIC WRITE; DATA RETENTION = 40 YEARS 31 MICROWIRE BUS INTERFACE; AUTOMATIC WRITE; ERAL AT 3.0V TO 6.0V; DATA RETENTION = 40 YEARS 12 USER DEFINED WRITE PROTECTED AREA; DATA RETENTION = 40 YEARS 21

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8 290

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Clock Frequency-Max (fCLK) (6)

200 kHz 2 250 kHz 269 400 kHz 23 500 kHz 67 1 MHz 258 2 MHz 174

Min (MHz) - Max (MHz)

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10 88 15 6 40 618 100 11 200 22

Min - Max

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10000.0 Write/Erase Cycles 14 40000.0 Write/Erase Cycles 26 100000.0 Write/Erase Cycles 72 1000000.0 Write/Erase Cycles 539

Min (Write/EraseCycles) - Max (Write/EraseCycles)

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1010DDDR 10 1010DDMR 1

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R-GDIP-T8 13 R-PDIP-T14 3 R-PDIP-T8 181 R-PDSO-G14 45 R-PDSO-G5 3 R-PDSO-G8 551 R-PDSO-N8 15 R-XDIP-T14 4 R-XDSO-N8 42 S-PDSO-G8 45 X-XUUC-N8 2

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e0 501 e3 32 e4 147

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2.9 mm 3 3 mm 102 4.4 mm 165 4.9 mm 296 5.02 mm 4 5.28 mm 10 8.65 mm 17 9 mm 7 9.185 mm 4 9.27 mm 24 9.46 mm 2 9.55 mm 12 9.817 mm 122 9.8425 mm 7 9.9695 mm 4 18.86 mm 2

Min (mm) - Max (mm)

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Manufacturer (15)

Exel Microelectronics Inc 23 Fairchild Semiconductor Corporation 193 Freescale Semiconductor 2 Microchip Technology Inc 34 Motorola Mobility LLC 1 Motorola Semiconductor Products 2 National Semiconductor Corporation 97 onsemi 19 Rochester Electronics LLC 62 ROHM Semiconductor 2 Samsung Semiconductor 16 Sierra Semiconductor 2 STMicroelectronics 294 Symbios Semiconductors 2 Texas Instruments 155

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Memory Density (1)

256 bit 823

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EEPROM 904

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Memory Width (1)

16 900

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1 99 NOT SPECIFIED 4

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1.0 823

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1 8

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14 52 5 3 8 849

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16 words 904

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16.0 904

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SYNCHRONOUS 823

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70.0 °C 232 85.0 °C 351 105.0 °C 66 125.0 °C 243

Min (°C) - Max (°C)

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-55.0 °C 29 -40.0 °C 618 -20.0 °C 13 0.0 °C 232

Min (°C) - Max (°C)

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Organization (1)

16X16 904

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3-STATE 323

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CERAMIC 4 CERAMIC, GLASS-SEALED 13 PLASTIC/EPOXY 843 UNSPECIFIED 44

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DIE 2 DIP 201 HVSON 15 SOP 431 TSSOP 210 VSON 42 VSSOP 3

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DIE OR CHIP 1 DIP14,.3 7 DIP8,.3 162 DIP8,.35 2 SOLCC8,.11,20 50 SOP14,.25 31 SOP8,.25 255 SOP8,.3 6 TSSOP8,.19 30 TSSOP8,.25 107 WAFER 1

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RECTANGULAR 857 SQUARE 45 UNSPECIFIED 2

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IN-LINE 201 SMALL OUTLINE 431 SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE 15 SMALL OUTLINE, THIN PROFILE, SHRINK PITCH 210 SMALL OUTLINE, VERY THIN PROFILE 42 SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH 3 UNCASED CHIP 2

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16 words 8

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SERIAL 904

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Power Supplies (1)

5 V 3

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Supply Voltage-Nom (Vsup) (3)

2.5 V 10 3.3 V 153 5 V 713

Min (V) - Max (V)

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