Parametric results for: 1M328V under Flash Memories

All Filters Access Time-Max Additional Feature Alternate Memory Width Boot Block Command User Interface Common Flash Interface Data Polling Data Retention Time-Min Endurance JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Sectors/Size Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Sector Size Supply Voltage-Nom (Vsup) Access Time-Max (6)

70 ns 125 80 ns 12 90 ns 170 100 ns 228 120 ns 285 150 ns 163

Min (ns) - Max (ns)

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100000 ERASE/PROGRAM CYCLES 8 ALSO HAVING 8-BIT MEMORY WIDTH 28 AUTOMATIC WRITE; TTL COMPATIBLE INPUT & OUTPUT; 10K ERASE/PROGRAM CYCLES 3 BOTTOM BOOT BLOCK 60 BOTTOM BOOT BLOCK; 100 YEARS DATA RETENTION 24 CONFIGURABLE 1M X 32; 100000 WRITE/ERASE CYCLES 1 CONFIGURABLE AS 1M X 32 72 CONFIGURABLE AS 2M X 16 OR 1M X 32 75 CONFIGURABLE AS 2M X 16 OR 1M X 32; 100000 ERASE/PROGRAM CYCLES 12 IT ALSO CONFIGURABLE AS 4M X 8 2 USER CONFIGURABLE 1M X 32; 1000000 ERASE/PROGRAM CYCLES; MINIMUM 20 YEARS DATA RETENTION 83 USER CONFIGURABLE AS 1M X 32 1 USER CONFIGURABLE AS 4M X 8 211 USER CONFIGURABLE AS 4MX8 54 USER SELECTABLE 5V OR 12V VPP; BOTTOM BOOT BLOCK 24

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16 246

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BOTTOM 609 TOP 24

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NO 24

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YES 24

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NO 94 YES 181

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20 155 100 24

Min - Max

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1000000.0 Write/Erase Cycles 36

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R-CQFP-G68 12 R-PSMA-N80 20 R-XSMA-N80 103 S-CHIP-P66 45 S-CHMA-P66 38 S-CPGA-P66 255 S-CQCC-J68 9 S-CQFP-F68 9 S-CQFP-G68 267 S-CQMA-F68 25 S-CQMA-G68 72 S-PQCC-J68 2 S-PQMA-J68 2 S-XHIP-P66 6 S-XPGA-P66 36 S-XQFP-G68 58 S-XQMA-F68 12 S-XQMA-G68 12

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e0 253 e4 192

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22.352 mm 43 22.36 mm 188 27.3 mm 114 30.099 mm 24 30.1 mm 99 35.2 mm 18

Min (mm) - Max (mm)

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Manufacturer (12)

Cobham Advanced Electronic Solutions 12 Cobham PLC 12 Cobham Power Products 12 Force Technologies Ltd 20 Hanbit Electronics Co Ltd 37 Mercury Systems Inc 125 Microsemi Corporation 183 Micross Components 69 Mitsubishi Electric 3 Msi Electronics Inc 2 White Electronic Designs Corp 339 White Microelectronics 221

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Memory Density (2)

33.5544 Mbit 935 67.1089 Mbit 48

Min (bit) - Max (bit)

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FLASH 110 FLASH MODULE 885

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Memory Width (2)

8 161 32 822

Min - Max

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1.0 879

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1,2,1,15 204 1,2,1,31 24 1,2,1,7 58 16 10 32 39

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66 380 68 480 80 123

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1.0486 M 774 2.0972 M 48 4.1943 M 161

Min (words) - Max (words)

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1000000.0 774 2000000.0 48 4000000.0 161

Min - Max

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ASYNCHRONOUS 879

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70.0 °C 320 85.0 °C 327 125.0 °C 310

Min (°C) - Max (°C)

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-55.0 °C 310 -40.0 °C 327 0.0 °C 320

Min (°C) - Max (°C)

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Organization (3)

1MX32 774 2MX32 48 4MX8 161

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3-STATE 123

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CERAMIC 148 CERAMIC, METAL-SEALED COFIRED 678 PLASTIC/EPOXY 24 UNSPECIFIED 133

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DIMM 96 PGA 291 QCCJ 11 QFF 12 QFP 304 SIMM 11

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LDCC68,1.0SQ 2 PGA66,11X11 122 QFL68,1.56SQ 12 QFP68,.99SQ,50 164 SIM80,.1 24 SSIM80 11

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RECTANGULAR 135 SQUARE 848

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CHIP CARRIER 11 FLATPACK 346 GRID ARRAY 291 IN-LINE 51 MICROELECTRONIC ASSEMBLY 284

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Sector Size (6)

16K,8K,32K,64K 96 16K,8K,96K,128K 58 32K 39 4K,2K,8K,16K 108 64K 10 8K,4K,16K,32K 24

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Supply Voltage-Nom (Vsup) (3)

3 V 32 3.3 V 414 5 V 537

Min (V) - Max (V)

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