Parametric results for: 1N3595-1%2FTR under Rectifier Diodes

All Filters Additional Feature Application Breakdown Voltage-Min Case Connection Configuration Diode Element Material Diode Type Forward Voltage-Max (VF) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Output Current-Max Power Dissipation-Max Rep Pk Reverse Voltage-Max Reverse Current-Max Reverse Recovery Time-Max Surface Mount

LOW LEAKAGE CURRENT 4 METALLURGICALLY BONDED 8

53 hits Apply

GENERAL PURPOSE 1

53 hits Apply

Breakdown Voltage-Min (1)

150 V 1

53 hits Apply

ISOLATED 50

53 hits Apply

Configuration (1)

SINGLE 50

53 hits Apply

Diode Element Material (1)

SILICON 50

53 hits Apply

Diode Type (1)

RECTIFIER DIODE 53

53 hits Apply

Forward Voltage-Max (VF) (1)

1 V 16

53 hits Apply

DO-35 29

53 hits Apply

O-LALF-W2 30 O-XALF-W2 20

53 hits Apply

e0 20

53 hits Apply

Manufacturer (10)

Bkc Semiconductors Inc 8 Defense Logistics Agency 4 Fairchild Semiconductor Corporation 1 MACOM 4 Microchip Technology Inc 9 Microsemi Corporation 11 National Semiconductor Corporation 3 Sensitron Semiconductors 5 Texas Instruments 3 VPT Components 5

53 hits Apply

Number of Elements (1)

1 50

53 hits Apply

Output Current-Max (2)

150 mA 37 200 mA 13

Min (A) - Max (A)

53 hits Apply

Power Dissipation-Max (1)

500 mW 26

53 hits Apply

Rep Pk Reverse Voltage-Max (2)

125 V 20 150 V 22

Min (V) - Max (V)

53 hits Apply

Reverse Current-Max (1)

1 nA 9

53 hits Apply

Reverse Recovery Time-Max (1)

3 µs 40

53 hits Apply

Surface Mount (1)

NO 50

53 hits Apply