Parametric results for: 1N4001-G under Rectifier Diodes
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1N4001GP-AQ
Diotec Semiconductor AG
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$0.0277 | Yes | Active | 1 A | 1.1 V | 1.5 µs | 5 µA | SILICON | RECTIFIER DIODE | SINGLE | NO | 50 V | 1 | GENERAL PURPOSE | 30 A | 1 | 50 V | O-PALF-W2 | e3 | AEC-Q101 | DO-204AC | 175 °C | -50 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | Matte Tin (Sn) - annealed | WIRE | AXIAL | DIOTEC SEMICONDUCTOR AG | compliant | EAR99 | 8541.10.00.80 | 2018-09-18 | Diotec | ||||||||||
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1N4001G
Yangzhou Yangjie Electronics Co Ltd
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$0.0460 | Yes | Active | 1 A | 1.1 V | SILICON | RECTIFIER DIODE | SINGLE | NO | 50 V | 1 | HIGH RELIABILITY, LOW POWER LOSS | 30 A | 1 | O-PALF-W2 | DO-204AL | 150 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | WIRE | AXIAL | YANGZHOU YANGJIE ELECTRONICS CO LTD | compliant | EAR99 | 8541.10.00.80 | DO-41, 2 PIN | |||||||||||||||||
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1N4001GP-E3/54
Vishay Intertechnologies
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$0.0470 | Yes | Not Recommended | 1 A | 1.1 V | 2 µs | SILICON | RECTIFIER DIODE | SINGLE | NO | 50 V | 1 | FREE WHEELING DIODE, HIGH RELIABILITY | GENERAL PURPOSE | 30 A | 1 | Not Qualified | O-PALF-W2 | e3 | DO-204AL | 175 °C | -65 °C | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | MATTE TIN | WIRE | AXIAL | VISHAY INTERTECHNOLOGY INC | compliant | Vishay | ||||||||||||||||
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1N4001G
onsemi
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$0.0756 | Yes | Active | 1 A | 1.1 V | 10 µA | SILICON | RECTIFIER DIODE | SINGLE | NO | 50 V | 1 | GENERAL PURPOSE | 30 A | 1 | 50 V | Not Qualified | O-PALF-W2 | e3 | DO-41 | 150 °C | -65 °C | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | Matte Tin (Sn) - annealed | WIRE | AXIAL | ONSEMI | not_compliant | EAR99 | 8541.10.00.80 | onsemi | CASE 59-10, 2 PIN | Axial Lead 5.20x2.70mm, 25.4x0.71mm Pkg, Lead len/dia | 2 | 59-10 | ||||||||||
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1N4001G-T
Diodes Incorporated
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$0.0921 | No | Yes | Active | 1 A | 1 V | 2 µs | SILICON | RECTIFIER DIODE | SINGLE | NO | 50 V | 1 | 30 A | 1 | Not Qualified | O-PALF-W2 | e3 | DO-41 | 1 | 175 °C | -65 °C | 260 | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | Matte Tin (Sn) | WIRE | AXIAL | DIODES INC | not_compliant | EAR99 | 8541.10.00.80 | Diodes Incorporated | O-PALF-W2 | DO-41 | 2 | ||||||||||
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1N4001GM02
Rectron Semiconductor
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Check for Price | Obsolete | 1 A | SILICON | RECTIFIER DIODE | SINGLE | NO | 50 V | 1 | 1 | Not Qualified | O-PALF-W2 | DO-41 | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | WIRE | AXIAL | RECTRON LTD | unknown | EAR99 | 8541.10.00.80 | O-PALF-W2 | ||||||||||||||||||||||||
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1N4001G
Galaxy Microelectronics
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Check for Price | Yes | Active | 1 A | 1.1 V | SILICON | RECTIFIER DIODE | SINGLE | NO | 50 V | 1 | 40 A | 1 | 175 °C | 260 | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | unknown | EAR99 | |||||||||||||||||||||||||||||||
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1N4001GP
Taiwan Semiconductor
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Check for Price | Yes | Obsolete | 1 A | 1.1 V | 5 µA | SILICON | RECTIFIER DIODE | SINGLE | NO | 50 V | 1 | GENERAL PURPOSE | 30 A | 1 | 50 V | O-PALF-W2 | DO-41 | 175 °C | -65 °C | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | WIRE | AXIAL | TAIWAN SEMICONDUCTOR CO LTD | compliant | EAR99 | 8541.10.00.80 | ||||||||||||||||||
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1N4001GP
Littelfuse Inc
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Check for Price | No | Obsolete | 1 A | 1.1 V | RECTIFIER DIODE | SINGLE | NO | 50 V | 1 | 30 A | 1 | e0 | 175 °C | Tin/Lead (Sn/Pb) | SEMITRON | unknown | EAR99 | |||||||||||||||||||||||||||||||
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1N4001G-K
Taiwan Semiconductor
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Check for Price | Yes | Active | 1 A | 1 V | 5 µA | SILICON | RECTIFIER DIODE | SINGLE | NO | 50 V | 1 | HIGH RELIABILITY, LOW POWER LOSS | EFFICIENCY | 30 A | 1 | 50 V | O-PALF-W2 | e3 | IEC-61249-2-21 | DO-204AL | 1 | 150 °C | -55 °C | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | Matte Tin (Sn) | WIRE | AXIAL | TAIWAN SEMICONDUCTOR CO LTD | not_compliant | EAR99 | 8541.10.00.80 |