Parametric results for: 1N4788 under Varactors

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Manufacturer Part Number: 1n4788
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1N4788
Cobham PLC
Check for Price No Transferred 10 pF 5 nA 500 mW SILICON 28 V VARIABLE CAPACITANCE DIODE SINGLE NO 25 V 1 20 % 2.34 15 25 V ABRUPT Not Qualified O-LALF-W2 e0 DO-7 150 °C -65 °C ISOLATED 2 GLASS ROUND LONG FORM TIN LEAD WIRE AXIAL KNOX SEMICONDUCTORS INC O-LALF-W2 unknown EAR99 8541.10.00.80
1N4788A
Spectrum Control
Check for Price Active 10 pF 0.005 pA 400 mW SILICON VARIABLE CAPACITANCE DIODE SINGLE NO 25 V 1 10 % 2.1692 15 25 V ABRUPT Not Qualified O-LALF-W2 DO-7 175 °C ISOLATED 2 GLASS ROUND LONG FORM WIRE AXIAL SPECTRUM CONTROL INC compliant EAR99 8541.10.00.80
1N4788C
International Semiconductor Inc
Check for Price Obsolete 10 pF 400 mW SILICON 25 V VARIABLE CAPACITANCE DIODE SINGLE NO 25 V 1 HIGH Q, LOW LEAKAGE 2 % 2.46 15 ABRUPT Not Qualified O-LALF-W2 DO-7 ISOLATED 2 GLASS ROUND LONG FORM WIRE AXIAL INTERNATIONAL SEMICONDUCTOR INC O-LALF-W2 unknown EAR99 8541.10.00.80
1N4788B
Cobham Semiconductor Solutions
Check for Price No No Obsolete 10 pF 500 mW SILICON 28 V VARIABLE CAPACITANCE DIODE SINGLE NO 1 5 % 2.34 15 ABRUPT Not Qualified O-LALF-W2 e0 DO-7 ISOLATED 2 GLASS ROUND LONG FORM TIN LEAD WIRE AXIAL AEROFLEX/MICROMETRICS O-LALF-W2 unknown EAR99 8541.10.00.80
1N4788CO
Cobham Semiconductor Solutions
Check for Price Obsolete 10 pF SILICON 28 V VARIABLE CAPACITANCE DIODE SINGLE YES 1 20 % 2.1692 15 ABRUPT Not Qualified X-XUUC-N e0 NOT SPECIFIED NOT SPECIFIED ISOLATED UNSPECIFIED UNSPECIFIED UNCASED CHIP TIN LEAD NO LEAD UPPER AEROFLEX/MICROMETRICS X-XUUC-N unknown EAR99 8541.10.00.40 DIE 1
1N4788
Eastron Corp
Check for Price No Obsolete 10 pF 26 V VARIABLE CAPACITANCE DIODE SINGLE NO 25 V 1 2.46 15 ABRUPT e0 ISOLATED Tin/Lead (Sn/Pb) EASTRON CORP unknown EAR99
1N4788C
Spectrum Control
Check for Price Active 10 pF 0.005 pA 400 mW SILICON VARIABLE CAPACITANCE DIODE SINGLE NO 25 V 1 2 % 2.1692 15 25 V ABRUPT Not Qualified O-LALF-W2 DO-7 175 °C ISOLATED 2 GLASS ROUND LONG FORM WIRE AXIAL API TECHNOLOGIES CORP O-LALF-W2 compliant EAR99 8541.10.00.80
1N4788A
Knox Semiconductor Inc
Check for Price No Transferred 10 pF 5 nA 500 mW SILICON 28 V VARIABLE CAPACITANCE DIODE SINGLE NO 25 V 1 10 % 2.34 15 25 V ABRUPT Not Qualified O-LALF-W2 e0 DO-7 150 °C -65 °C ISOLATED 2 GLASS ROUND LONG FORM TIN LEAD WIRE AXIAL KNOX SEMICONDUCTORS INC unknown
1N4788D
Cobham PLC
Check for Price Obsolete 10 pF 5 nA 500 mW SILICON 28 V VARIABLE CAPACITANCE DIODE SINGLE NO 25 V 1 1 % 2.1692 15 25 V ABRUPT Not Qualified O-LALF-W2 e0 150 °C -65 °C ISOLATED 2 GLASS ROUND LONG FORM TIN LEAD WIRE AXIAL KNOX SEMICONDUCTORS INC O-LALF-W2 unknown EAR99 8541.10.00.80 DO-7 2
1N4788
Semiconductors Inc
Check for Price Contact Manufacturer 10 pF 28 V VARIABLE CAPACITANCE DIODE SINGLE NO 25 V 1 0.443 15 ABRUPT ISOLATED SEMICONDUCTORS INC unknown EAR99