Register or Sign In
Parametric » Diodes » Varactors

Parametric results for: 1N4807B under Varactors

Filter Your Search

1 - 10 of 15 results

|
15 hits
-
15 hits
15 hits
15 hits
15 hits
-
15 hits
15 hits
15 hits
15 hits
15 hits
15 hits
15 hits
15 hits
15 hits
15 hits
-
15 hits
15 hits
-
15 hits
15 hits
Manufacturer Part Number: 1n4807b
Select parts from the table below to compare.
 Compare
Compare
1N4807B
 Cobham PLC 		Check for Price No Transferred 22 pF 5 nA 500 mW SILICON 99 V VARIABLE CAPACITANCE DIODE SINGLE NO 90 V 1 5 % 2.35 15 90 V ABRUPT Not Qualified O-LALF-W2 e0 DO-7 150 °C -65 °C ISOLATED 2 GLASS ROUND LONG FORM TIN LEAD WIRE AXIAL KNOX SEMICONDUCTORS INC O-LALF-W2 unknown EAR99 8541.10.00.80
1N4807BCO
 Cobham Semiconductor Solutions 		Check for Price Obsolete 22 pF SILICON 99 V VARIABLE CAPACITANCE DIODE SINGLE YES 1 5 % 3.9683 15 ABRUPT Not Qualified X-XUUC-N e0 NOT SPECIFIED NOT SPECIFIED ISOLATED UNSPECIFIED UNSPECIFIED UNCASED CHIP TIN LEAD NO LEAD UPPER AEROFLEX/MICROMETRICS X-XUUC-N unknown EAR99 8541.10.00.40 DIE 1
1N4807B
 Loral Microwave-Fsi 		Check for Price No Obsolete 22 pF 99 V VARIABLE CAPACITANCE DIODE SINGLE NO 90 V 1 2.35 15 ABRUPT e0 ISOLATED Tin/Lead (Sn/Pb) LORAL MICROWAVE-FSI unknown EAR99
1N4807B
 International Semiconductor Inc 		Check for Price Obsolete 22 pF 400 mW SILICON 90 V VARIABLE CAPACITANCE DIODE SINGLE NO 90 V 1 HIGH Q, LOW LEAKAGE 5 % 2.35 15 ABRUPT Not Qualified O-LALF-W2 DO-7 ISOLATED 2 GLASS ROUND LONG FORM WIRE AXIAL INTERNATIONAL SEMICONDUCTOR INC O-LALF-W2 unknown EAR99 8541.10.00.80
1N4807B
 Eastron Corp 		Check for Price No Obsolete 22 pF 99 V VARIABLE CAPACITANCE DIODE SINGLE NO 90 V 1 2.35 15 ABRUPT e0 ISOLATED Tin/Lead (Sn/Pb) EASTRON CORP unknown EAR99
1N4807B
 Lockheed Martin Microwave 		Check for Price Obsolete 22 pF 5 nA 500 mW SILICON 99 V VARIABLE CAPACITANCE DIODE SINGLE NO 1 HIGH RELIABILITY 5 % 3.97 VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY 15 90 V ABRUPT Not Qualified O-LALF-W2 DO-14 150 °C ISOLATED 2 GLASS ROUND LONG FORM WIRE AXIAL LOCKHEED MARTIN MICROWAVE O-LALF-W2 unknown EAR99 8541.10.00.80
1N4807B
 New Jersey Semiconductor Products Inc 		Check for Price Contact Manufacturer SILICON 90 V VARIABLE CAPACITANCE DIODE SINGLE 1 2.35 15 ABRUPT 150 °C -65 °C ISOLATED NEW JERSEY SEMICONDUCTOR PRODUCTS INC unknown
1N4807B
 Msi Electronics Inc 		Check for Price Obsolete 22 pF 0.005 pA 400 mW SILICON VARIABLE CAPACITANCE DIODE SINGLE NO 90 V 1 5 % 3.9683 15 90 V ABRUPT Not Qualified O-LALF-W2 175 °C ISOLATED 2 GLASS ROUND LONG FORM WIRE AXIAL MSI ELECTRONICS INC O-LALF-W2 unknown EAR99 8541.10.00.80
1N4807B
 Cobham Semiconductor Solutions 		Check for Price No No Obsolete 22 pF 500 mW SILICON 99 V VARIABLE CAPACITANCE DIODE SINGLE NO 1 5 % 2.35 15 ABRUPT Not Qualified O-LALF-W2 e0 DO-7 ISOLATED 2 GLASS ROUND LONG FORM TIN LEAD WIRE AXIAL AEROFLEX/MICROMETRICS O-LALF-W2 unknown EAR99 8541.10.00.80
TX-1N4807B
 Lockheed Martin Microwave 		Check for Price Obsolete 22 pF 5 nA 500 mW SILICON 99 V VARIABLE CAPACITANCE DIODE SINGLE NO 1 HIGH RELIABILITY 5 % 3.97 VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY 15 90 V ABRUPT Not Qualified O-LALF-W2 DO-14 150 °C ISOLATED 2 GLASS ROUND LONG FORM WIRE AXIAL LOCKHEED MARTIN MICROWAVE O-LALF-W2 unknown EAR99 8541.10.00.80
12Next