Parametric results for: 1N5293-1 under Current Regulator Diodes
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1N5293-1
Microchip Technology Inc
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$19.1604 | No | Active | 1.15 V | 680 µA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | METALLURGICALLY BONDED | 1.35 MΩ | Not Qualified | O-XALF-W2 | e0 | DO-35 | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-35, 2 PIN | compliant | ||||||||||
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JAN1N5293-1
Microchip Technology Inc
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$32.4611 | No | Active | 1.15 V | 680 µA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | 1.35 MΩ | Qualified | O-LALF-W2 | e0 | MIL-PRF-19500 | DO-7 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-35, 2 PIN | compliant | ||||||||
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JANTX1N5293-1
Microchip Technology Inc
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$35.0186 | No | Active | 1.15 V | 680 µA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | 1.35 MΩ | Qualified | O-LALF-W2 | e0 | MIL-PRF-19500 | DO-7 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-35, 2 PIN | compliant | ||||||||
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JANTXV1N5293-1
Microchip Technology Inc
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$37.5039 | No | Active | 1.15 V | 680 µA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | 1.35 MΩ | Qualified | O-LALF-W2 | e0 | MIL-PRF-19500 | DO-7 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-35, 2 PIN | compliant | ||||||||
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JANS1N5293-1
Microchip Technology Inc
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$102.8722 | No | Active | 1.15 V | 680 µA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | 1.35 MΩ | Qualified | O-LALF-W2 | e0 | MIL-PRF-19500 | DO-7 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-35, 2 PIN | compliant | ||||||||
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JANS1N5293-1/TR
Microchip Technology Inc
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$103.0213 | No | Active | 1.15 V | 680 µA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | 1.35 MΩ | O-LALF-W2 | e0 | MIL-PRF-19500 | DO-7 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | compliant | ||||||||||
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1N5293-1TRE3
Microsemi Corporation
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Check for Price | Yes | Transferred | 1.15 V | 680 µA | 500 mW | SILICON | CURRENT REGULATOR DIODE | NO | 100 V | 1.35 MΩ | MICROSEMI CORP | compliant | EAR99 | ||||||||||||||||||||||||||
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JANTXV1N5293-1
Knox Semiconductor Inc
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Check for Price | No | Transferred | 1.15 V | 680 µA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | 1.35 MΩ | Not Qualified | O-LALF-W2 | e0 | MIL-19500/463 | DO-7 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | KNOX SEMICONDUCTORS INC | GLASS PACKAGE-2 | unknown | ||||||||||
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JANTX1N5293-1
Cobham Semiconductor Solutions
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Check for Price | No | No | Obsolete | 1.15 V | 680 µA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | Not Qualified | O-LALF-W2 | e0 | MIL-19500/463 | DO-7 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | AEROFLEX/METELICS INC | GLASS PACKAGE-2 | unknown | EAR99 | DO-7 | 2 | 8541.10.00.70 | ||||||
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JANTX1N5293-1
Defense Logistics Agency
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Check for Price | Active | 1.15 V | 680 µA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | Qualified | O-XALF-W2 | MIL-19500/463G | DO-7 | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | WIRE | AXIAL | DEFENSE LOGISTICS AGENCY | HERMETIC SEALED PACKAGE-2 | unknown |