Parametric results for: 1N5295 under Current Regulator Diodes
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1N5295-1
Microchip Technology Inc
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$16.9294 | No | Active | 1.25 V | 820 µA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | METALLURGICALLY BONDED | 1 MΩ | Not Qualified | O-XALF-W2 | e0 | DO-35 | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-35, 2 PIN | compliant | ||||||||||||
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1N5295
Microchip Technology Inc
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$19.1604 | No | Active | 1.25 V | 820 µA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | METALLURGICALLY BONDED | 290 kΩ | Not Qualified | O-XALF-W2 | e0 | DO-35 | 175 °C | -55 °C | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-35, 2 PIN | compliant | ||||||||||
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1N5295UR-1
Microsemi Corporation
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$19.1780 | No | No | Transferred | 1.25 V | 820 µA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 100 V | 1 | FIELD EFFECT | METALLURGICALLY BONDED | 1 MΩ | Not Qualified | O-LELF-R2 | e0 | DO-213AB | 1 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROSEMI CORP | HERMETIC SEALED, GLASS, LL41, MELF-2 | unknown | DO-213AB | 2 | EAR99 | 8541.10.00.70 | ||||
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1N5295UR-1
Microchip Technology Inc
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$22.4877 | No | Active | 1.25 V | 820 µA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 100 V | 1 | FIELD EFFECT | METALLURGICALLY BONDED | 1 MΩ | Not Qualified | O-LELF-R2 | e0 | DO-213AB | 1 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, LL41, MELF-2 | compliant | |||||||||
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JAN1N5295-1
Microchip Technology Inc
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$32.4611 | No | Active | 1.25 V | 820 µA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | 1 MΩ | Qualified | O-LALF-W2 | e0 | MIL-PRF-19500 | DO-7 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-35, 2 PIN | compliant | ||||||||||
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JAN1N5295-1
Microsemi Corporation
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$33.3300 | No | No | Transferred | 1.25 V | 820 µA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Not Qualified | O-XALF-W2 | e0 | MIL-19500/463 | DO-35 | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | DO-35, 2 PIN | unknown | DO-7 | 2 | EAR99 | 8541.10.00.70 | ||||||||
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JANTX1N5295-1
Microchip Technology Inc
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$35.0186 | No | Active | 1.25 V | 820 µA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | 1 MΩ | Qualified | O-LALF-W2 | e0 | MIL-PRF-19500 | DO-7 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-35, 2 PIN | compliant | ||||||||||
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JANTXV1N5295-1
Microchip Technology Inc
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$37.5039 | No | Active | 1.25 V | 820 µA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | 1 MΩ | Qualified | O-LALF-W2 | e0 | MIL-PRF-19500 | DO-7 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-35, 2 PIN | compliant | ||||||||||
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JAN1N5295UR-1
Microchip Technology Inc
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$37.8002 | No | Active | 1.25 V | 820 µA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 100 V | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Qualified | O-LELF-R2 | e0 | MIL-19500 | DO-213AB | 1 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, LL41, MELF-2 | compliant | |||||||||
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JANTXV1N5295-1
Microsemi Corporation
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$38.5110 | No | No | Transferred | 1.25 V | 820 µA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Not Qualified | O-XALF-W2 | e0 | MIL-19500/463 | DO-35 | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | DO-35, 2 PIN | unknown | DO-7 | 2 | EAR99 | 8541.10.00.70 |