Parametric results for: 1N5312UR-1 under Current Regulator Diodes
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1N5312UR-1
Microsemi Corporation
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$19.1780 | No | No | Transferred | 2.6 V | 3.9 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 100 V | 1 | FIELD EFFECT | METALLURGICALLY BONDED | 255 kΩ | Not Qualified | O-LELF-R2 | e0 | DO-213AB | 1 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROSEMI CORP | DO-213AB | HERMETIC SEALED, GLASS, LL41, MELF-2 | 2 | unknown | EAR99 | 8541.10.00.70 | Microsemi Corporation | |||||
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1N5312UR-1
Microchip Technology Inc
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$22.2885 | No | Active | 2.6 V | 3.9 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 100 V | 1 | FIELD EFFECT | METALLURGICALLY BONDED | 255 kΩ | Not Qualified | O-LELF-R2 | e0 | DO-213AB | 1 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, LL41, MELF-2 | compliant | Microchip | ||||||||||
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1N5312UR-1E3
Microchip Technology Inc
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$22.6706 | Yes | Active | 2.6 V | 3.9 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 100 V | 1 | FIELD EFFECT | METALLURGICALLY BONDED | O-LELF-R2 | DO-213AB | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | ROHS COMPLIANT, HERMETIC SEALED, GLASS, LL41, MELF-2 | compliant | Microchip | |||||||||||||||
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JANTX1N5312UR-1
MACOM
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$27.6881 | Yes | Transferred | 2.6 V | 3.9 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Qualified | O-XELF-R2 | DO-213AB | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | WRAP AROUND | END | M/A-COM TECHNOLOGY SOLUTIONS INC | compliant | EAR99 | 8541.10.00.70 | |||||||||||||||
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JAN1N5312UR-1
Microchip Technology Inc
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$31.2270 | No | Active | 2.6 V | 3.9 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 100 V | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Qualified | O-LELF-R2 | e0 | MIL-19500 | DO-213AB | 1 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, LL41, MELF-2 | compliant | Microchip | ||||||||||
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JANTX1N5312UR-1
Microchip Technology Inc
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$36.7283 | No | Active | 2.6 V | 3.9 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 100 V | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Qualified | O-LELF-R2 | e0 | MIL-19500 | DO-213AB | 1 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, LL41, MELF-2 | compliant | |||||||||||
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JAN1N5312UR-1
Microsemi Corporation
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$38.5440 | No | No | Transferred | 2.6 V | 3.9 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Not Qualified | O-LELF-R2 | e0 | MIL-19500 | DO-213AB | 1 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROSEMI CORP | DO-213AB | HERMETIC SEALED, GLASS, LL41, MELF-2 | 2 | unknown | EAR99 | 8541.10.00.70 | Microsemi Corporation | ||||||
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JANTXV1N5312UR-1
Microchip Technology Inc
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$41.6318 | No | Active | 2.6 V | 3.9 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 100 V | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Qualified | O-LELF-R2 | e0 | MIL-19500 | DO-213AB | 1 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, LL41, MELF-2 | compliant | |||||||||||
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JANTXV1N5312UR-1
Microsemi Corporation
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$42.7350 | No | No | Transferred | 2.6 V | 3.9 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Not Qualified | O-LELF-R2 | e0 | MIL-19500 | DO-213AB | 1 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROSEMI CORP | DO-213AB | HERMETIC SEALED, GLASS, LL41, MELF-2 | 2 | unknown | EAR99 | 8541.10.00.70 | Microsemi Corporation | ||||||
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JANS1N5312UR-1
Microchip Technology Inc
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$135.3461 | No | Active | 2.6 V | 3.9 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 100 V | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Qualified | O-LELF-R2 | e0 | MIL-19500 | DO-213AB | 1 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, LL41, MELF-2 | compliant |