Findchips: Parametric Search Results for 1N5407G-K


Select Parts		Part Number

		1N5407G-K Taiwan Semiconductor
		1N5407G-KA0G Taiwan Semiconductor
		1N5407G-KR0G Taiwan Semiconductor
		1N5407G-KB0G Taiwan Semiconductor

			Most Relevant									Technical				Compliance			Operating Conditions			Physical								Other
Composite Price	Rohs Code	Part Life Cycle Code	Output Current-Max	Forward Voltage-Max (VF)	Reverse Current-Max	Diode Element Material	Diode Type	Configuration	Surface Mount	Rep Pk Reverse Voltage-Max	Number of Elements	Additional Feature	Application	Non-rep Pk Forward Current-Max	Number of Phases	JESD-30 Code	JESD-609 Code	JEDEC-95 Code	Moisture Sensitivity Level	Operating Temperature-Max	Operating Temperature-Min	Case Connection	Number of Terminals	Package Body Material	Package Shape	Package Style	Terminal Finish	Terminal Form	Terminal Position	Ihs Manufacturer	Reach Compliance Code	ECCN Code	HTS Code

Check for Price

Yes

Active

3 A

1 V

5 µA

SILICON

RECTIFIER DIODE

SINGLE

800 V

HIGH RELIABILITY; LOW POWER LOSS

EFFICIENCY

125 A

O-PALF-W2

DO-201AD

150 °C

-55 °C

ISOLATED

PLASTIC/EPOXY

ROUND

LONG FORM

Matte Tin (Sn)

WIRE

AXIAL

TAIWAN SEMICONDUCTOR CO LTD

not_compliant

EAR99

8541.10.00.80

Check for Price

Yes

Active

3 A

1 V

5 µA

SILICON

RECTIFIER DIODE

SINGLE

800 V

FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS

EFFICIENCY

125 A

O-PALF-W2

DO-201AD

150 °C

-55 °C

ISOLATED

PLASTIC/EPOXY

ROUND

LONG FORM

Matte Tin (Sn)

WIRE

AXIAL

TAIWAN SEMICONDUCTOR CO LTD

not_compliant

EAR99

8541.10.00.80

Check for Price

Yes

Active

3 A

1 V

5 µA

SILICON

RECTIFIER DIODE

SINGLE

800 V

FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS

EFFICIENCY

125 A

O-PALF-W2

DO-201AD

150 °C

-55 °C

ISOLATED

PLASTIC/EPOXY

ROUND

LONG FORM

Matte Tin (Sn)

WIRE

AXIAL

TAIWAN SEMICONDUCTOR CO LTD

not_compliant

EAR99

8541.10.00.80

Check for Price

Yes

Active

3 A

1 V

5 µA

SILICON

RECTIFIER DIODE

SINGLE

800 V

FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS

EFFICIENCY

125 A

O-PALF-W2

DO-201AD

150 °C

-55 °C

ISOLATED

PLASTIC/EPOXY

ROUND

LONG FORM

Matte Tin (Sn)

WIRE

AXIAL

TAIWAN SEMICONDUCTOR CO LTD

not_compliant

EAR99

8541.10.00.80

Compare

1N5407G-K

Taiwan Semiconductor

Check for Price

Yes

Active

3 A

1 V

5 µA

SILICON

RECTIFIER DIODE

SINGLE

800 V

HIGH RELIABILITY; LOW POWER LOSS

EFFICIENCY

125 A

O-PALF-W2

DO-201AD

150 °C

-55 °C

ISOLATED

PLASTIC/EPOXY

ROUND

LONG FORM

Matte Tin (Sn)

WIRE

AXIAL

TAIWAN SEMICONDUCTOR CO LTD

not_compliant

EAR99

8541.10.00.80

1N5407G-KA0G

Taiwan Semiconductor

Check for Price

Yes

Active

3 A

1 V

5 µA

SILICON

RECTIFIER DIODE

SINGLE

800 V

FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS

EFFICIENCY

125 A

O-PALF-W2

DO-201AD

150 °C

-55 °C

ISOLATED

PLASTIC/EPOXY

ROUND

LONG FORM

Matte Tin (Sn)

WIRE

AXIAL

TAIWAN SEMICONDUCTOR CO LTD

not_compliant

EAR99

8541.10.00.80

1N5407G-KR0G

Taiwan Semiconductor

Check for Price

Yes

Active

3 A

1 V

5 µA

SILICON

RECTIFIER DIODE

SINGLE

800 V

FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS

EFFICIENCY

125 A

O-PALF-W2

DO-201AD

150 °C

-55 °C

ISOLATED

PLASTIC/EPOXY

ROUND

LONG FORM

Matte Tin (Sn)

WIRE

AXIAL

TAIWAN SEMICONDUCTOR CO LTD

not_compliant

EAR99

8541.10.00.80

1N5407G-KB0G

Taiwan Semiconductor

Check for Price

Yes

Active

3 A

1 V

5 µA

SILICON

RECTIFIER DIODE

SINGLE

800 V

FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS

EFFICIENCY

125 A

O-PALF-W2

DO-201AD

150 °C

-55 °C

ISOLATED

PLASTIC/EPOXY

ROUND

LONG FORM

Matte Tin (Sn)

WIRE

AXIAL

TAIWAN SEMICONDUCTOR CO LTD

not_compliant

EAR99

8541.10.00.80

Parametric results for: 1N5407G-K under Rectifier Diodes