Parametric results for: 1N5419 under Rectifier Diodes
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1N5419
Microchip Technology Inc
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$5.6411 | No | Active | 3 A | 150 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | AVALANCHE | HIGH RELIABILITY | FAST RECOVERY | 80 A | 1 | Not Qualified | O-LALF-W2 | e0 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | compliant | Microchip | ||||||||||||||
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1N5419
Microsemi Corporation
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$6.6433 | No | No | Transferred | 3 A | 150 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | AVALANCHE | HIGH RELIABILITY | FAST RECOVERY | 80 A | 1 | Not Qualified | O-LALF-W2 | e0 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | unknown | Microsemi Corporation | HERMETICALLY SEALED GLASS PACKAGE, 2 PIN | 2 | EAR99 | 8541.10.00.80 | |||||||||
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1N5419E3
Microsemi Corporation
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$6.8376 | Yes | Transferred | 3 A | 1.5 V | 250 ns | 1 µA | SILICON | RECTIFIER DIODE | SINGLE | NO | 500 V | 1 | AVALANCHE | HIGH RELIABILITY | FAST RECOVERY | 80 A | 1 | O-LALF-W2 | e3 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | MATTE TIN | WIRE | AXIAL | MICROSEMI CORP | compliant | Microsemi Corporation | ROHS COMPLIANT, HERMETIC SEALED, GLASS, B PACKAGE-2 | 2 | EAR99 | 8541.10.00.80 | ||||||
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JAN1N5419
Microchip Technology Inc
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$8.4162 | No | Active | 3 A | 250 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | FAST RECOVERY POWER | 80 A | 1 | Qualified | O-XALF-W2 | MIL-19500/411L | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | compliant | ||||||||||||||||||
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JAN1N5419US
Microchip Technology Inc
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$8.4882 | No | Active | 3 A | 250 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 1 | FAST RECOVERY POWER | 80 A | 1 | Qualified | O-LELF-R2 | MIL-19500/411L | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | compliant | ||||||||||||||||||
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JAN1N5419
Microsemi Corporation
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$9.0002 | No | Transferred | 3 A | 250 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | FAST RECOVERY POWER | 80 A | 1 | Not Qualified | O-XALF-W2 | MIL-19500/411L | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | WIRE | AXIAL | MICROSEMI CORP | unknown | Microsemi Corporation | SIMILAR TO DO-41, 2 PIN | 2 | EAR99 | 8541.10.00.80 | DO-41 | ||||||||||||
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JANTX1N5419
Microchip Technology Inc
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$9.2519 | No | Active | 3 A | 250 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 500 V | 1 | FAST RECOVERY POWER | 80 A | 1 | Qualified | O-XALF-W2 | e0 | MIL-19500/411L | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | compliant | |||||||||||||||
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JANTX1N5419
Microsemi Corporation
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$9.8720 | No | Transferred | 3 A | 250 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 500 V | 1 | FAST RECOVERY POWER | 80 A | 1 | Not Qualified | O-XALF-W2 | e0 | MIL-19500/411L | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | not_compliant | Microsemi Corporation | SIMILAR TO DO-41, 2 PIN | 2 | EAR99 | 8541.10.00.80 | DO-41 | |||||||||
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1N5419US
Microchip Technology Inc
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$9.8787 | No | Active | 3 A | 1.5 V | 250 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 500 V | 1 | HIGH RELIABILITY, METALLURGICALLY BONDED | FAST RECOVERY | 80 A | 1 | Not Qualified | O-LELF-R2 | e0 | 175 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | compliant | Microchip | ||||||||||||
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1N5419E3
Microchip Technology Inc
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$9.9850 | Yes | Active | 3 A | 1.5 V | 250 ns | 1 µA | SILICON | RECTIFIER DIODE | SINGLE | NO | 500 V | 1 | AVALANCHE | HIGH RELIABILITY | FAST RECOVERY | 80 A | 1 | O-LALF-W2 | e3 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | MATTE TIN | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | compliant | Microchip |