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JANTXV1N5553US
Semtech Corporation
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$1.0000 | Transferred | 3 A | 1.3 V | SILICON | RECTIFIER DIODE | SINGLE | YES | 800 V | 1 | POWER | 100 A | 1 | Qualified | O-LELF-R2 | MIL-19500/420G | 175 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | SEMTECH CORP | GLASS PACKAGE-2 | 2 | unknown | EAR99 | 8541.10.00.80 | SEMTECH | ||||||||||||||||
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JANTX1N5553
Microsemi Corporation
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$4.8645 | No | No | Transferred | 5 A | SILICON | RECTIFIER DIODE | SINGLE | NO | 800 V | 1 | AVALANCHE | POWER | 100 A | 1 | Not Qualified | O-XALF-W2 | e0 | MIL-19500/420G | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | SIMILAR TO DO-41, 2 PIN | 2 | not_compliant | EAR99 | 8541.10.00.80 | Microsemi Corporation | E PACKAGE | ||||||||||||
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1N5553
Sensitron Semiconductors
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$5.9967 | No | No | Active | 3 A | 1.3 V | 2 µs | 1 µA | SILICON | RECTIFIER DIODE | SINGLE | NO | 800 V | 1 | GENERAL PURPOSE | 150 A | 1 | Not Qualified | O-XALF-W2 | e0 | 1 | 175 °C | -65 °C | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | SENSITRON SEMICONDUCTOR | 2 | compliant | EAR99 | 8541.10.00.80 | AXIAL DIODE | ||||||||||
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1N5553
Microchip Technology Inc
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$7.6673 | No | Active | 5 A | 2 µs | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | AVALANCHE | HIGH RELIABILITY | GENERAL PURPOSE | 100 A | 1 | Not Qualified | O-LALF-W2 | e0 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | GLASS, E PACKAGE, 2 PIN | compliant | Microchip | |||||||||||||||||
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JAN1N5553
Microchip Technology Inc
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$7.7294 | No | Active | 5 A | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | POWER | 100 A | 1 | Qualified | O-XALF-W2 | e0 | MIL-19500/420G | 175 °C | -65 °C | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | Tin/Lead (Sn/Pb) | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | SIMILAR TO DO-41, 2 PIN | compliant | ||||||||||||||||||
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1N5553
Microsemi Corporation
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$7.7591 | No | No | Transferred | 5 A | 2 µs | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | AVALANCHE | HIGH RELIABILITY | GENERAL PURPOSE | 100 A | 1 | Not Qualified | O-LALF-W2 | e0 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | GLASS, E PACKAGE, 2 PIN | 2 | unknown | EAR99 | 8541.10.00.80 | Microsemi Corporation | E PACKAGE | ||||||||||||
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JANTX1N5553
Microchip Technology Inc
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$7.9637 | No | Active | 5 A | SILICON | RECTIFIER DIODE | SINGLE | NO | 800 V | 1 | AVALANCHE | POWER | 100 A | 1 | Qualified | O-XALF-W2 | e0 | MIL-19500/420G | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | SIMILAR TO DO-41, 2 PIN | compliant | ||||||||||||||||||
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JANTX1N5553/TR
Microchip Technology Inc
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$8.1151 | Active | 5 A | 1.3 V | 2 µs | 1 µA | SILICON | 880 V | RECTIFIER DIODE | SINGLE | NO | 800 V | 1 | HIGH RELIABILITY | GENERAL PURPOSE | 100 A | 1 | 800 V | O-LALF-W2 | MIL-PRF-19500 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | compliant | ||||||||||||||||
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1N5553US
Microsemi Corporation
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$9.4966 | No | No | Transferred | 5 A | 2 µs | SILICON | RECTIFIER DIODE | SINGLE | YES | 800 V | 1 | AVALANCHE | HIGH RELIABILITY | POWER | 100 A | 1 | Not Qualified | O-LELF-R2 | e0 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROSEMI CORP | HERMETIC SEALED, D-5B, 2 PIN | 2 | not_compliant | EAR99 | 8541.10.00.80 | |||||||||||
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JAN1N5553
Microsemi Corporation
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$9.9715 | No | Transferred | 5 A | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | POWER | 100 A | 1 | Not Qualified | O-XALF-W2 | e0 | MIL-19500/420G | 175 °C | -65 °C | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | Tin/Lead (Sn/Pb) | WIRE | AXIAL | MICROSEMI CORP | SIMILAR TO DO-41, 2 PIN | 2 | unknown | EAR99 | 8541.10.00.80 | Microsemi Corporation | E PACKAGE |