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1 - 10 of 108 results
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JANTXV1N5554US
Semtech Corporation
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$1.0000 | Transferred | 3 A | 1.3 V | SILICON | RECTIFIER DIODE | SINGLE | YES | 1 kV | 1 | POWER | 100 A | 1 | Qualified | O-LELF-R2 | MIL-19500/420G | 175 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | SEMTECH CORP | GLASS PACKAGE-2 | 2 | unknown | EAR99 | 8541.10.00.80 | ||||||||||||||||
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1N5554
Solid State Devices Inc (SSDI)
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$1.9261 | Active | 3 A | 1.3 V | 5 µs | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 kV | 1 | GENERAL PURPOSE | 1 | Not Qualified | 175 °C | SOLID STATE DEVICES INC | compliant | EAR99 | ||||||||||||||||||||||||||||
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1N5554C.TR
Semtech Corporation
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$4.4176 | Transferred | 3 A | 1.1 V | 3 µs | 1 µA | SILICON | 1.1 kV | RECTIFIER DIODE | SINGLE | NO | 1.1 kV | 1 | 90 A | 1 | 1.1 kV | E-XALF-W2 | 175 °C | -65 °C | ISOLATED | 2 | UNSPECIFIED | ELLIPTICAL | LONG FORM | WIRE | AXIAL | SEMTECH CORP | unknown | EAR99 | 8541.10.00.80 | SEMTECH | |||||||||||||||
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JAN1N5554
Microchip Technology Inc
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$7.7294 | No | Active | 3 A | 1.3 V | 2 µs | 1 µA | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 kV | 1 | AVALANCHE | HIGH RELIABILITY | GENERAL PURPOSE | 100 A | 1 | Qualified | O-LALF-W2 | e0 | MIL-19500 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, B PACKAGE-2 | compliant | |||||||||||
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1N5554
Microsemi Corporation
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$7.7591 | No | No | Transferred | 5 A | 2 µs | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | AVALANCHE | HIGH RELIABILITY | GENERAL PURPOSE | 100 A | 1 | Not Qualified | O-LALF-W2 | e0 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | GLASS, E PACKAGE, 2 PIN | 2 | unknown | EAR99 | 8541.10.00.80 | Microsemi Corporation | E PACKAGE | |||||||||||
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JANTX1N5554
Microchip Technology Inc
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$8.4551 | No | Active | 5 A | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | POWER | 100 A | 1 | Not Qualified | O-XALF-W2 | e0 | MIL-19500/420G | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | Tin/Lead (Sn/Pb) | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | SIMILAR TO DO-41, 2 PIN | 2 | compliant | EAR99 | 8541.10.00.80 | Microchip | DO-41 | ||||||||||||||
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1N5554US
Microsemi Corporation
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$8.9896 | No | No | Transferred | 5 A | 1.3 V | 2 µs | SILICON | RECTIFIER DIODE | SINGLE | YES | 1 kV | 1 | AVALANCHE | HIGH RELIABILITY | POWER | 100 A | 1 | Not Qualified | O-LELF-R2 | e0 | 175 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROSEMI CORP | HERMETIC SEALED, D-5B, 2 PIN | 2 | unknown | EAR99 | 8541.10.00.80 | Microsemi Corporation | |||||||||
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1N5554
Microchip Technology Inc
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$9.3949 | No | Active | 5 A | 2 µs | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | AVALANCHE | HIGH RELIABILITY | GENERAL PURPOSE | 100 A | 1 | Not Qualified | O-LALF-W2 | e0 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | GLASS, E PACKAGE, 2 PIN | compliant | |||||||||||||||||
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JAN1N5554
Microsemi Corporation
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$9.9715 | No | Transferred | 3 A | 1.3 V | 2 µs | 1 µA | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 kV | 1 | AVALANCHE | HIGH RELIABILITY | GENERAL PURPOSE | 100 A | 1 | Not Qualified | O-LALF-W2 | e0 | MIL-19500 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | HERMETIC SEALED, GLASS, B PACKAGE-2 | 2 | unknown | EAR99 | 8541.10.00.80 | E PACKAGE | |||||||
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JAN1N5554US
Microchip Technology Inc
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$10.2969 | No | Active | 3 A | 1.3 V | 2 µs | 1 µA | SILICON | RECTIFIER DIODE | SINGLE | YES | 1 kV | 1 | AVALANCHE | HIGH RELIABILITY | POWER | 100 A | 1 | Qualified | O-LELF-R2 | e0 | MIL-19500 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, D-5B, SQ-MELF, B PACKAGE-2 | compliant |