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1N5610
Microchip Technology Inc
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$71.3276 | No | Active | 3 W | SILICON | 33 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | NO | 30.5 V | 1 | AVALANCHE | HIGH RELIABILITY, METALLURGICALLY BONDED | 1.5 kW | Not Qualified | O-LALF-W2 | e0 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD OVER NICKEL | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETICALLY SEALED, GLASS PACKAGE-2 | compliant | |||||||||||||
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1N5610E3
Microchip Technology Inc
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$71.5248 | Active | 3 W | SILICON | 33 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | NO | 30.5 V | 1 | AVALANCHE | HIGH RELIABILITY, METALLURGICALLY BONDED | 1.5 kW | O-LALF-W2 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETICALLY SEALED, GLASS PACKAGE-2 | compliant | |||||||||||||||||
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1N5610
EIC Semiconductor Inc
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Check for Price | Yes | Yes | Active | 47.6 V | 5 µA | 3 W | SILICON | 33 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | NO | 30.5 V | 1 | AVALANCHE | 1.5 kW | 30.5 V | O-PALF-W2 | TS 16949 | DO-201 | 175 °C | -55 °C | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | WIRE | AXIAL | EIC SEMICONDUCTOR CO LTD | compliant | EAR99 | 8541.10.00.50 | ||||||||
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JANTXV1N5610
Defense Logistics Agency
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Check for Price | Active | 3 W | SILICON | 33 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | NO | 30.5 V | 1 | AVALANCHE | 1.5 kW | Qualified | O-XALF-W2 | MIL-19500/434C | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | WIRE | AXIAL | DEFENSE LOGISTICS AGENCY | unknown | |||||||||||||||||
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1N5610HR
Digitron Semiconductors
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Check for Price | No | Active | TRANS VOLTAGE SUPPRESSOR DIODE | e0 | TIN LEAD | DIGITRON SEMICONDUCTORS | unknown | EAR99 | 8541.10.00.50 | ||||||||||||||||||||||||||||||||
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JANTX1N5610
Microchip Technology Inc
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Check for Price | No | Active | 3 W | SILICON | 33 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | NO | 30.5 V | 1 | AVALANCHE | 1.5 kW | Qualified | O-XALF-W2 | e0 | MIL-19500/434C | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | compliant | ||||||||||||||
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SP1N5610
Microsemi Corporation
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Check for Price | Transferred | 47.6 V | 3 W | SILICON | 33 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | NO | 30.5 V | 1 | AVALANCHE | HIGH RELIABILITY | 1.5 kW | O-LALF-W2 | IEC-61000-4-2,4-4,4-5; MIL-19500 | 175 °C | -55 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | MICROSEMI CORP | compliant | EAR99 | 8541.10.00.50 | ||||||||||||
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1N5611
New Jersey Semiconductor Products Inc
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Check for Price | Active | SILICON | 43.7 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | 40.3 V | 1 | AVALANCHE | 1.5 kW | 175 °C | -55 °C | NEW JERSEY SEMICONDUCTOR PRODUCTS INC | unknown | |||||||||||||||||||||||||||
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1N5610
New Jersey Semiconductor Products Inc
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Check for Price | Active | SILICON | 33 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | 30.5 V | 1 | AVALANCHE | 1.5 kW | 175 °C | -55 °C | NEW JERSEY SEMICONDUCTOR PRODUCTS INC | unknown | |||||||||||||||||||||||||||
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1N5610E3
Microsemi Corporation
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Check for Price | Transferred | 3 W | SILICON | 33 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | NO | 30.5 V | 1 | AVALANCHE | HIGH RELIABILITY, METALLURGICALLY BONDED | 1.5 kW | O-LALF-W2 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | MICROSEMI CORP | HERMETICALLY SEALED, GLASS PACKAGE-2 | compliant | EAR99 | 8541.10.00.50 | Microsemi Corporation |