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1N5615US
Sensitron Semiconductors
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$5.9311 | No | No | Active | 1 A | 1.6 V | 150 ns | 500 nA | SILICON | RECTIFIER DIODE | SINGLE | YES | 200 V | 1 | HIGH RELIABILITY | FAST RECOVERY | 25 A | 1 | 200 V | Not Qualified | E-LELF-R2 | e0 | 1 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ELLIPTICAL | LONG FORM | TIN LEAD | WRAP AROUND | END | SENSITRON SEMICONDUCTOR | MELF-1, 2 PIN | 2 | compliant | EAR99 | 8541.10.00.80 | 1994-01-01 | |||||||
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1N5615US
Microsemi Corporation
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$5.9971 | No | No | Transferred | 1 A | 150 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 200 V | 1 | AVALANCHE | HIGH RELIABILITY | 1 | Not Qualified | O-LELF-R2 | e0 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROSEMI CORP | HERMETIC SEALED, GLASS, D-5A, 2 PIN | 2 | not_compliant | EAR99 | 8541.10.00.80 | Microsemi Corporation | ||||||||||||||
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1N5615US
Microchip Technology Inc
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$7.4717 | No | Active | 1 A | 150 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 200 V | 1 | AVALANCHE | HIGH RELIABILITY | 1 | Not Qualified | O-LELF-R2 | e0 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, D-5A, 2 PIN | compliant | Microchip | ||||||||||||||||||
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1N5615US/TR
Microchip Technology Inc
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$7.6589 | Active | 1 A | 150 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 200 V | 1 | AVALANCHE | HIGH RELIABILITY | 1 | O-LELF-R2 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | compliant | EAR99 | 8541.10.00.80 | Microchip | |||||||||||||||||||
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JAN1N5615US
Microchip Technology Inc
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$8.4059 | No | Active | 1 A | 1.6 V | 150 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 200 V | 1 | AVALANCHE | HIGH RELIABILITY | 1 | Qualified | O-LELF-R2 | MIL-19500/429J | 175 °C | -65 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS PACKAGE-2 | compliant | |||||||||||||||
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JANTX1N5615US
Microchip Technology Inc
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$8.7294 | No | Active | 1 A | 150 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 1 | 1 | Qualified | O-LELF-R2 | e0 | MIL-19500/429J | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS PACKAGE-2 | compliant | |||||||||||||||||||||
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JANTX1N5615US/TR
Microchip Technology Inc
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$8.7935 | Active | 1 A | 150 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 1 | 1 | Qualified | O-LELF-R2 | e0 | MIL-19500/429J | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | unknown | EAR99 | 8541.10.00.80 | |||||||||||||||||||||
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JANTXV1N5615US
Microchip Technology Inc
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$11.1103 | No | Active | 1 A | 150 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 200 V | 1 | AVALANCHE | 1 | Qualified | O-LELF-R2 | e0 | MIL-19500/429J | ISOLATED | 2 | GLASS | ROUND | LONG FORM | Tin/Lead (Sn/Pb) | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS PACKAGE-2 | compliant | |||||||||||||||||||
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JANTXV1N5615US
Microsemi Corporation
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$12.0615 | No | Transferred | 1 A | 150 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 200 V | 1 | AVALANCHE | 1 | Not Qualified | O-LELF-R2 | e0 | MIL-19500/429J | ISOLATED | 2 | GLASS | ROUND | LONG FORM | Tin/Lead (Sn/Pb) | WRAP AROUND | END | MICROSEMI CORP | HERMETIC SEALED, GLASS PACKAGE-2 | 2 | not_compliant | EAR99 | 8541.10.00.80 | Microsemi Corporation | |||||||||||||||
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JAN1N5615US
Microsemi Corporation
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$13.3900 | No | Transferred | 1 A | 1.6 V | 150 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 200 V | 1 | AVALANCHE | HIGH RELIABILITY | 1 | Not Qualified | O-LELF-R2 | MIL-19500/429J | 175 °C | -65 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROSEMI CORP | HERMETIC SEALED, GLASS PACKAGE-2 | 2 | unknown | EAR99 | 8541.10.00.80 | Microsemi Corporation |