Parametric results for: 1N562. under Signal Diodes
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1N5623GP-E3/54
Vishay Semiconductors
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$0.1908 | Yes | Not Recommended | 1 A | 1.2 V | 500 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 kV | 1 | FREE WHEELING DIODE, HIGH RELIABILITY | 50 A | 1 | Not Qualified | O-PALF-W2 | e3 | DO-204AC | 175 °C | -65 °C | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | MATTE TIN | WIRE | AXIAL | VISHAY SEMICONDUCTORS | DO-15 | O-PALF-W2 | 2 | unknown | EAR99 | 8541.10.00.80 | Vishay | |||||||||
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1N5622GP-E3/54
Vishay Semiconductors
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$0.1998 | Yes | Obsolete | 1 A | 1.2 V | 2 µs | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 kV | 1 | FREE WHEELING DIODE, HIGH RELIABILITY | 50 A | 1 | Not Qualified | O-PALF-W2 | e3 | DO-204AC | 175 °C | -65 °C | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | MATTE TIN | WIRE | AXIAL | VISHAY SEMICONDUCTORS | DO-15 | O-PALF-W2 | 2 | unknown | EAR99 | 8541.10.00.80 | ||||||||||
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1N5627GP-E3/54
Vishay Semiconductors
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$0.3822 | Yes | Yes | Obsolete | 3 A | 950 mV | 3 µs | SILICON | RECTIFIER DIODE | SINGLE | NO | 800 V | 1 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT | GENERAL PURPOSE | 125 A | 1 | Not Qualified | O-PALF-W2 | e3 | DO-201AD | 175 °C | -65 °C | 250 | 40 | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | Matte Tin (Sn) | WIRE | AXIAL | VISHAY SEMICONDUCTORS | DO-201AD | O-PALF-W2 | 2 | unknown | EAR99 | 8541.10.00.80 | Vishay | |||||
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1N5624-TR
Vishay Intertechnologies
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$0.4955 | Yes | Active | 3 A | 1 V | 7.5 µs | 1 µA | SILICON | RECTIFIER DIODE | SINGLE | NO | 200 V | 1 | AVALANCHE | GENERAL PURPOSE | 100 A | 1 | E-LALF-W2 | 175 °C | -55 °C | ISOLATED | 2 | GLASS | ELLIPTICAL | LONG FORM | WIRE | AXIAL | VISHAY INTERTECHNOLOGY INC | HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2 | unknown | EAR99 | 8541.10.00.80 | Vishay | |||||||||||||
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1N5626-TAP
Vishay Intertechnologies
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$0.4958 | Yes | Active | 3 A | 1 V | 6 µs | SILICON | RECTIFIER DIODE | SINGLE | NO | 600 V | 1 | AVALANCHE | METALLURGICALLY BONDED | GENERAL PURPOSE | 100 A | 1 | Not Qualified | E-LALF-W2 | e2 | 1 | 175 °C | -55 °C | ISOLATED | 2 | GLASS | ELLIPTICAL | LONG FORM | TIN SILVER | WIRE | AXIAL | VISHAY INTERTECHNOLOGY INC | HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2 | compliant | Vishay | |||||||||||
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1N5626-TAP
Vishay Semiconductors
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$0.5386 | No | No | Active | 3 A | 1 V | 6 µs | SILICON | RECTIFIER DIODE | SINGLE | NO | 600 V | 1 | AVALANCHE | METALLURGICALLY BONDED | GENERAL PURPOSE | 100 A | 1 | Not Qualified | E-LALF-W2 | e2 | 1 | 175 °C | -55 °C | ISOLATED | 2 | GLASS | ELLIPTICAL | LONG FORM | TIN SILVER | WIRE | AXIAL | VISHAY SEMICONDUCTORS | E-LALF-W2 | 2 | unknown | EAR99 | 8541.10.00.80 | Vishay | |||||||
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1N5625-TR
Vishay Intertechnologies
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$0.5586 | Yes | Active | 3 A | 1 V | 7.5 µs | 1 µA | SILICON | RECTIFIER DIODE | SINGLE | NO | 400 V | 1 | AVALANCHE | GENERAL PURPOSE | 100 A | 1 | E-LALF-W2 | 175 °C | -55 °C | ISOLATED | 2 | GLASS | ELLIPTICAL | LONG FORM | WIRE | AXIAL | VISHAY INTERTECHNOLOGY INC | HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2 | unknown | EAR99 | 8541.10.00.80 | Vishay | |||||||||||||
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1N5625-TAP
Vishay Semiconductors
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$0.5601 | No | No | Active | 3 A | 1 V | 6 µs | SILICON | RECTIFIER DIODE | SINGLE | NO | 400 V | 1 | AVALANCHE | METALLURGICALLY BONDED | GENERAL PURPOSE | 100 A | 1 | Not Qualified | E-LALF-W2 | e2 | 175 °C | -55 °C | 260 | 30 | ISOLATED | 2 | GLASS | ELLIPTICAL | LONG FORM | TIN SILVER | WIRE | AXIAL | VISHAY SEMICONDUCTORS | E-LALF-W2 | 2 | unknown | EAR99 | 8541.10.00.80 | Vishay | ||||||
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1N5627-TAP
Vishay Semiconductors
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$0.5604 | No | No | Active | 3 A | 1 V | 6 µs | SILICON | RECTIFIER DIODE | SINGLE | NO | 800 V | 1 | AVALANCHE | METALLURGICALLY BONDED | GENERAL PURPOSE | 100 A | 1 | Not Qualified | E-LALF-W2 | 175 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | GLASS | ELLIPTICAL | LONG FORM | WIRE | AXIAL | VISHAY SEMICONDUCTORS | E-LALF-W2 | 2 | unknown | EAR99 | 8541.10.00.80 | Vishay | ||||||||
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1N5626-TR
Vishay Intertechnologies
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$0.6240 | Yes | Active | 3 A | 1 V | 7.5 µs | 1 µA | SILICON | RECTIFIER DIODE | SINGLE | NO | 600 V | 1 | AVALANCHE | GENERAL PURPOSE | 100 A | 1 | E-LALF-W2 | 175 °C | -55 °C | ISOLATED | 2 | GLASS | ELLIPTICAL | LONG FORM | WIRE | AXIAL | VISHAY INTERTECHNOLOGY INC | HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2 | unknown | EAR99 | 8541.10.00.80 | Vishay |