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1N5627GP-E3/54
Vishay Semiconductors
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$0.3822 | Yes | Yes | Obsolete | 3 A | 950 mV | 3 µs | SILICON | RECTIFIER DIODE | SINGLE | NO | 800 V | 1 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT | GENERAL PURPOSE | 125 A | 1 | Not Qualified | O-PALF-W2 | e3 | DO-201AD | 175 °C | -65 °C | 250 | 40 | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | Matte Tin (Sn) | WIRE | AXIAL | VISHAY SEMICONDUCTORS | DO-201AD | O-PALF-W2 | 2 | unknown | EAR99 | 8541.10.00.80 | Vishay | |||||||
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1N5627-TAP
Vishay Semiconductors
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$0.5604 | No | No | Active | 3 A | 1 V | 6 µs | SILICON | RECTIFIER DIODE | SINGLE | NO | 800 V | 1 | AVALANCHE | METALLURGICALLY BONDED | GENERAL PURPOSE | 100 A | 1 | Not Qualified | E-LALF-W2 | 175 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | GLASS | ELLIPTICAL | LONG FORM | WIRE | AXIAL | VISHAY SEMICONDUCTORS | E-LALF-W2 | 2 | unknown | EAR99 | 8541.10.00.80 | Vishay | ||||||||||
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1N5627-TAP
Vishay Intertechnologies
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$0.6428 | Yes | Active | 3 A | 1 V | 6 µs | SILICON | RECTIFIER DIODE | SINGLE | NO | 800 V | 1 | AVALANCHE | METALLURGICALLY BONDED | GENERAL PURPOSE | 100 A | 1 | Not Qualified | E-LALF-W2 | 175 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | GLASS | ELLIPTICAL | LONG FORM | WIRE | AXIAL | VISHAY INTERTECHNOLOGY INC | HALOGEN FREE AND HERMETIC SEALED, GLASS PACKAGE-2 | compliant | Vishay | ||||||||||||||
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1N5627-TR
Vishay Intertechnologies
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$0.6848 | Yes | Active | 3 A | 1 V | 7.5 µs | 1 µA | SILICON | RECTIFIER DIODE | SINGLE | NO | 800 V | 1 | AVALANCHE | GENERAL PURPOSE | 100 A | 1 | E-LALF-W2 | e2 | 175 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | GLASS | ELLIPTICAL | LONG FORM | TIN/SILVER (SN/AG) | WIRE | AXIAL | VISHAY INTERTECHNOLOGY INC | HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2 | unknown | EAR99 | 8541.10.00.80 | Vishay | |||||||||||
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1N5627
Central Semiconductor Corp
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Check for Price | No | No | Obsolete | 5 A | 950 mV | SILICON | RECTIFIER DIODE | SINGLE | NO | 800 V | 1 | HIGH RELIABILITY | GENERAL PURPOSE | 125 A | 1 | Not Qualified | E-LALF-W2 | e0 | 1 | 175 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | GLASS | ELLIPTICAL | LONG FORM | Tin/Lead (Sn/Pb) | WIRE | AXIAL | CENTRAL SEMICONDUCTOR CORP | HERMETIC SEALED, GPR-3A, 2 PIN | 2 | unknown | EAR99 | 8541.10.00.80 | |||||||||||
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1N5627GP/91-E3
Vishay Semiconductors
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Check for Price | Yes | Yes | Obsolete | 3 A | 3 µs | SILICON | RECTIFIER DIODE | SINGLE | NO | 800 V | 1 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | GENERAL PURPOSE | 125 A | 1 | Not Qualified | O-PALF-W2 | e3 | DO-201AD | 175 °C | -65 °C | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | MATTE TIN | WIRE | AXIAL | VISHAY SEMICONDUCTORS | DO-201AD | O-PALF-W2 | 2 | unknown | EAR99 | 8541.10.00.80 | |||||||||||
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1N5627/1-GSI-B
Taitron Components Inc
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Check for Price | Obsolete | 3 A | 1 V | 5 µA | SILICON | 800 V | RECTIFIER DIODE | SINGLE | NO | 800 V | 1 | 125 A | 1 | 800 V | E-LALF-W2 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ELLIPTICAL | LONG FORM | WIRE | AXIAL | TAITRON COMPONENTS INC | E-LALF-W2 | unknown | EAR99 | 8541.10.00.80 | ||||||||||||||||||
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1N5627
NTE Electronics Inc
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Check for Price | Yes | Active | 3 A | 1 V | 5 µA | SILICON | RECTIFIER DIODE | SINGLE | NO | 800 V | 1 | GENERAL PURPOSE | 125 A | 1 | E-LALF-W2 | 175 °C | -65 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | GLASS | ELLIPTICAL | LONG FORM | WIRE | AXIAL | NTE ELECTRONICS INC | unknown | EAR99 | 8541.10.00.80 | |||||||||||||||||
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CPD06-1N5627-CT
Central Semiconductor Corp
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Check for Price | Active | CENTRAL SEMICONDUCTOR CORP | compliant | EAR99 | |||||||||||||||||||||||||||||||||||||||||||
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1N5627
International Semiconductor Inc
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Check for Price | Obsolete | 3 A | 950 mV | SILICON | RECTIFIER DIODE | SINGLE | NO | 800 V | 1 | GENERAL PURPOSE | 125 A | 1 | Not Qualified | O-LALF-W2 | 175 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | INTERNATIONAL SEMICONDUCTOR INC | unknown | EAR99 | 8541.10.00.80 |