Parametric results for: 1N5806%2BJANTXV under Rectifier Diodes
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JAN1N5806
Semtech Corporation
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$1.0000 | Transferred | 3.3 A | 875 mV | 25 ns | 1 µA | SILICON | RECTIFIER DIODE | SINGLE | NO | 150 V | 1 | SUPER FAST RECOVERY | 35 A | 1 | Qualified | O-LALF-W2 | MIL-19500/477 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | SEMTECH CORP | G111, 2 PIN | 2 | G111 | unknown | EAR99 | 8541.10.00.80 | SEMTECH | ||||||||||||||
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1N5806
Solid State Devices Inc (SSDI)
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$2.1486 | Active | 2 A | 875 mV | 20 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 150 V | 1 | HYPER ULTRA FAST RECOVERY | 1 | Not Qualified | 175 °C | SOLID STATE DEVICES INC | compliant | EAR99 | |||||||||||||||||||||||||||||||
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1N5806
Microsemi Corporation
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$4.3837 | No | No | Transferred | 1 A | 25 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 150 V | 1 | AVALANCHE | HIGH RELIABILITY | GENERAL PURPOSE | 1 | O-LALF-W2 | e0 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD OVER NICKEL | WIRE | AXIAL | MICROSEMI CORP | HERMETIC SEALED, GLASS PACKAGE-2 | 2 | not_compliant | EAR99 | 8541.10.00.80 | Microsemi Corporation | ||||||||||||||
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1N5806
Sensitron Semiconductors
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$4.4504 | No | No | Active | 2.5 A | 875 mV | 25 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 150 V | 1 | METALLURGICALLY BONDED | ULTRA FAST RECOVERY | 35 A | 1 | Not Qualified | E-LALF-W2 | e0 | 1 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ELLIPTICAL | LONG FORM | TIN LEAD | WIRE | AXIAL | SENSITRON SEMICONDUCTOR | HERMETIC SEALED, GLASS, 106, 2 PIN | 2 | compliant | EAR99 | 8541.10.00.80 | 1997-01-01 | |||||||||||
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1N5806C.TR
Semtech Corporation
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$4.5413 | Transferred | 2.5 A | 875 mV | 25 ns | 5 µA | SILICON | RECTIFIER DIODE | SINGLE | NO | 150 V | 1 | SUPER FAST RECOVERY | 30 A | 1 | 150 V | E-LALF-W2 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ELLIPTICAL | LONG FORM | WIRE | AXIAL | SEMTECH CORP | unknown | EAR99 | 8541.10.00.80 | SEMTECH | ||||||||||||||||||
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JAN1N5806
Microchip Technology Inc
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$4.9560 | No | Active | 1 A | 25 ns | 3 W | SILICON | RECTIFIER DIODE | SINGLE | NO | 150 V | 1 | AVALANCHE | HIGH RELIABILITY | GENERAL PURPOSE | 1 | Qualified | O-LALF-W2 | e0 | MIL-19500 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD OVER NICKEL | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | compliant | |||||||||||||||||
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1N5806
Microchip Technology Inc
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$5.3683 | No | Active | 1 A | 25 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 150 V | 1 | AVALANCHE | HIGH RELIABILITY | GENERAL PURPOSE | 1 | O-LALF-W2 | e0 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD OVER NICKEL | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | compliant | Microchip | |||||||||||||||||||
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JANTX1N5806
Microchip Technology Inc
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$5.4245 | No | Active | 1 A | 25 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 150 V | 1 | AVALANCHE | HIGH RELIABILITY | GENERAL PURPOSE | 1 | Qualified | O-LALF-W2 | e0 | MIL-19500 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | compliant | Microchip | |||||||||||||||||
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JANTX1N5806/TR
Microchip Technology Inc
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$5.5814 | No | Active | 2.5 A | 975 mV | 25 ns | 1 µA | SILICON | 160 V | RECTIFIER DIODE | SINGLE | NO | 150 V | 1 | HIGH RELIABILITY | ULTRA FAST RECOVERY | 35 A | 1 | 150 V | O-LALF-W2 | e0 | MIL-PRF-19500 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | Tin/Lead (Sn/Pb) | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | compliant | |||||||||||||||
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1N5806US
Sensitron Semiconductors
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$5.6215 | No | No | Active | 2.5 A | 875 mV | 25 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 150 V | 1 | METALLURGICALLY BONDED | ULTRA FAST RECOVERY | 35 A | 1 | Not Qualified | E-LELF-R2 | e0 | 1 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ELLIPTICAL | LONG FORM | TIN LEAD | WRAP AROUND | END | SENSITRON SEMICONDUCTOR | MELF-A, 2 PIN | 2 | compliant | EAR99 | 8541.10.00.80 | 1997-01-01 | MELF |