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1N5807US
Microchip Technology Inc
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$8.5166 | No | Active | 3 A | 30 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 50 V | 1 | HIGH RELIABILITY, METALLURGICALLY BONDED | ULTRA FAST RECOVERY | 125 A | 1 | O-LELF-R2 | e3 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | Matte Tin (Sn) - with Nickel (Ni) barrier | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, MELF-2 | compliant | Microchip | |||||||||
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JAN1N5807US
Microchip Technology Inc
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$8.7754 | No | Active | 3 A | 875 mV | 30 ns | 5 W | SILICON | RECTIFIER DIODE | SINGLE | YES | 50 V | 1 | HIGH RELIABILITY | ULTRA FAST RECOVERY | 125 A | 1 | Qualified | O-LELF-R2 | e0 | MIL-19500/477 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, D-5B, 2 PIN | compliant | ||||||
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JANTX1N5807US
Microchip Technology Inc
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$10.1198 | No | Active | 3 A | 30 ns | 5 W | SILICON | RECTIFIER DIODE | SINGLE | YES | 50 V | 1 | HIGH RELIABILITY, METALLURGICALLY BONDED | ULTRA FAST RECOVERY | 125 A | 1 | Qualified | O-LELF-R2 | e0 | MIL-19500 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, MELF-2 | compliant | |||||||
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JANTXV1N5807US
Microchip Technology Inc
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$12.6311 | No | Active | 3 A | 30 ns | 5 W | SILICON | RECTIFIER DIODE | SINGLE | YES | 50 V | 1 | HIGH RELIABILITY, METALLURGICALLY BONDED | ULTRA FAST RECOVERY | 125 A | 1 | Qualified | O-LELF-R2 | e0 | MIL-19500 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, MELF-2 | compliant | |||||||
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JAN1N5807US
Semtech Corporation
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$15.4565 | Transferred | 6 A | 875 mV | 30 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 50 V | 1 | ULTRA FAST RECOVERY POWER | 125 A | 1 | Qualified | O-LELF-R2 | MIL-19500/477F | 175 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | SEMTECH CORP | unknown | EAR99 | 8541.10.00.80 | |||||||||||
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JANTX1N5807US
Semtech Corporation
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$24.6000 | Transferred | 6 A | 875 mV | 30 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 50 V | 1 | SUPER FAST SOFT RECOVERY | 125 A | 1 | Qualified | O-LELF-R2 | MIL-19500/477 | 175 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | SEMTECH CORP | HERMETIC SEALED PACKAGE-2 | unknown | SEMTECH | EAR99 | 8541.10.00.80 | 2 | ||||||||
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1N5807US
Semtech Corporation
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$27.6700 | Transferred | 6 A | 875 mV | 30 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 50 V | 1 | SUPER FAST SOFT RECOVERY | 125 A | 1 | Not Qualified | O-LELF-R2 | 175 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | SEMTECH CORP | HERMETIC SEALED PACKAGE-2 | unknown | SEMTECH | EAR99 | 8541.10.00.80 | 2 | |||||||||
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JANS1N5807US
Microchip Technology Inc
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$42.2610 | No | Active | 3 A | 30 ns | 5 W | SILICON | RECTIFIER DIODE | SINGLE | YES | 50 V | 1 | HIGH RELIABILITY, METALLURGICALLY BONDED | ULTRA FAST RECOVERY | 125 A | 1 | Qualified | O-LELF-R2 | e0 | MIL-19500 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, MELF-2 | compliant | |||||||
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1N5807US
Bkc Semiconductors Inc
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Check for Price | No | Obsolete | 6 A | 875 mV | 30 ns | 5 W | SILICON | RECTIFIER DIODE | SINGLE | YES | 50 V | 1 | HIGH SURGE CAPABILITY | FAST RECOVERY | 125 A | 1 | Not Qualified | O-MELF-R2 | e0 | 175 °C | ISOLATED | 2 | METAL | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | BKC SEMICONDUCTORS INC | unknown | EAR99 | 8541.10.00.80 | |||||||
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JANTX1N5807US
Solid State Devices Inc (SSDI)
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Check for Price | Active | 3 A | 30 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 50 V | 1 | ULTRA FAST RECOVERY POWER | 125 A | 1 | Not Qualified | O-LELF-R2 | MIL-19500 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | SOLID STATE DEVICES INC | compliant | EAR99 | 8541.10.00.80 |