Findchips: Parametric Search Results for 1N5809

Parametric results for: 1N5809 under Rectifier Diodes

Select parts from the table below to compare.

Compare


Select Parts		Part Number

		1N5809 Solid State Devices Inc (SSDI)
		JAN1N5809 Microchip Technology Inc
		1N5809 Microchip Technology Inc
		1N5809E3 Microchip Technology Inc
		JANTX1N5809 Microchip Technology Inc
		1N5809US Sensitron Semiconductors
		JANTX1N5809/TR Microchip Technology Inc
		1N5809E3/TR Microchip Technology Inc
		JAN1N5809US Microchip Technology Inc
		1N5809US Microchip Technology Inc

				Most Relevant												Technical				Compliance				Operating Conditions					Physical								Other
Composite Price	Pbfree Code	Rohs Code	Part Life Cycle Code	Output Current-Max	Forward Voltage-Max (VF)	Reverse Recovery Time-Max	Reverse Current-Max	Power Dissipation-Max	Diode Element Material	Diode Type	Configuration	Surface Mount	Rep Pk Reverse Voltage-Max	Number of Elements	Technology	Additional Feature	Application	Non-rep Pk Forward Current-Max	Number of Phases	Qualification Status	JESD-30 Code	JESD-609 Code	Reference Standard	Moisture Sensitivity Level	Operating Temperature-Max	Operating Temperature-Min	Peak Reflow Temperature (Cel)	Time@Peak Reflow Temperature-Max (s)	Case Connection	Number of Terminals	Package Body Material	Package Shape	Package Style	Terminal Finish	Terminal Form	Terminal Position	Ihs Manufacturer	Reach Compliance Code	ECCN Code	Package Description	Samacsys Manufacturer	Part Package Code	Pin Count	HTS Code

$3.0500

Active

6 A

875 mV

40 ns

SILICON

RECTIFIER DIODE

SINGLE

100 V

HYPER ULTRA FAST RECOVERY

Not Qualified

175 °C

SOLID STATE DEVICES INC

compliant

EAR99

$6.6802

Active

6 A

875 mV

30 ns

5 W

SILICON

RECTIFIER DIODE

SINGLE

100 V

HIGH RELIABILITY, METALLURGICALLY BONDED

ULTRA FAST RECOVERY POWER

125 A

Qualified

O-XALF-W2

MIL-19500

175 °C

-65 °C

ISOLATED

UNSPECIFIED

ROUND

LONG FORM

TIN LEAD OVER NICKEL

WIRE

AXIAL

MICROCHIP TECHNOLOGY INC

compliant

$7.2425

Active

3 A

30 ns

SILICON

RECTIFIER DIODE

SINGLE

100 V

HIGH RELIABILITY, METALLURGICALLY BONDED

ULTRA FAST RECOVERY

125 A

O-LALF-W2

175 °C

-65 °C

ISOLATED

GLASS

ROUND

LONG FORM

TIN LEAD

WIRE

AXIAL

MICROCHIP TECHNOLOGY INC

compliant

HERMETIC SEALED, GLASS PACKAGE-2

Microchip

$7.4257

Yes

Active

3 A

875 mV

30 ns

5 µA

SILICON

RECTIFIER DIODE

SINGLE

100 V

AVALANCHE

HIGH RELIABILITY

ULTRA FAST RECOVERY POWER

125 A

O-LALF-W2

175 °C

-65 °C

ISOLATED

GLASS

ROUND

LONG FORM

MATTE TIN OVER NICKEL

WIRE

AXIAL

MICROCHIP TECHNOLOGY INC

compliant

ROHS COMPLIANT, HERMETIC SEALED, GLASS, B PACKAGE-2

Microchip

$7.4717

Active

3 A

30 ns

SILICON

RECTIFIER DIODE

SINGLE

100 V

HIGH RELIABILITY, METALLURGICALLY BONDED

ULTRA FAST RECOVERY

125 A

Qualified

O-LALF-W2

MIL-19500

175 °C

-65 °C

ISOLATED

GLASS

ROUND

LONG FORM

TIN LEAD

WIRE

AXIAL

MICROCHIP TECHNOLOGY INC

compliant

HERMETIC SEALED, GLASS PACKAGE-2

$7.4951

Active

6 A

925 mV

30 ns

5 µA

SILICON

RECTIFIER DIODE

SINGLE

YES

100 V

HIGH RELIABILITY, METALLURGICALLY BONDED

ULTRA FAST RECOVERY

125 A

Not Qualified

E-LELF-R2

175 °C

-65 °C

ISOLATED

GLASS

ELLIPTICAL

LONG FORM

TIN LEAD

WRAP AROUND

END

SENSITRON SEMICONDUCTOR

compliant

EAR99

MELF-B, 2 PIN

MELF

8541.10.00.80

$7.5438

Active

3 A

30 ns

SILICON

RECTIFIER DIODE

SINGLE

100 V

HIGH RELIABILITY, METALLURGICALLY BONDED

ULTRA FAST RECOVERY

125 A

Qualified

O-LALF-W2

MIL-19500

175 °C

-65 °C

NOT SPECIFIED

ISOLATED

GLASS

ROUND

LONG FORM

TIN LEAD

WIRE

AXIAL

MICROCHIP TECHNOLOGY INC

unknown

EAR99

8541.10.00.80

$7.6021

Yes

Active

6 A

30 µs

SILICON

RECTIFIER DIODE

SINGLE

100 V

HIGH RELIABILITY

GENERAL PURPOSE

125 A

O-GALF-W2

ISOLATED

CERAMIC, GLASS-SEALED

ROUND

LONG FORM

MATTE TIN OVER NICKEL

WIRE

AXIAL

MICROCHIP TECHNOLOGY INC

compliant

EAR99

HERMETIC SEALED, GLASS, E, 2 PIN

Microchip

8541.10.00.80

$8.2755

Active

3 A

875 mV

30 ns

5 W

SILICON

RECTIFIER DIODE

SINGLE

YES

100 V

HIGH RELIABILITY

ULTRA FAST RECOVERY

125 A

Qualified

O-LELF-R2

MIL-19500/477

175 °C

-65 °C

ISOLATED

GLASS

ROUND

LONG FORM

TIN LEAD

WRAP AROUND

END

MICROCHIP TECHNOLOGY INC

compliant

HERMETIC SEALED, GLASS, D-5B, 2 PIN

$8.5946

Active

3 A

30 ns

SILICON

RECTIFIER DIODE

SINGLE

YES

100 V

HIGH RELIABILITY, METALLURGICALLY BONDED

ULTRA FAST RECOVERY

125 A

O-LELF-R2

175 °C

-65 °C

ISOLATED

GLASS

ROUND

LONG FORM

TIN LEAD OVER NICKEL

WRAP AROUND

END

MICROCHIP TECHNOLOGY INC

compliant

HERMETIC SEALED, GLASS, MELF-2

Microchip

1 2 3 4 5 Next

Compare

1N5809

Solid State Devices Inc (SSDI)

$3.0500

Active

6 A

875 mV

40 ns

SILICON

RECTIFIER DIODE

SINGLE

100 V

HYPER ULTRA FAST RECOVERY

Not Qualified

175 °C

SOLID STATE DEVICES INC

compliant

EAR99

JAN1N5809

Microchip Technology Inc

$6.6802

Active

6 A

875 mV

30 ns

5 W

SILICON

RECTIFIER DIODE

SINGLE

100 V

HIGH RELIABILITY, METALLURGICALLY BONDED

ULTRA FAST RECOVERY POWER

125 A

Qualified

O-XALF-W2

MIL-19500

175 °C

-65 °C

ISOLATED

UNSPECIFIED

ROUND

LONG FORM

TIN LEAD OVER NICKEL

WIRE

AXIAL

MICROCHIP TECHNOLOGY INC

compliant

1N5809

Microchip Technology Inc

$7.2425

Active

3 A

30 ns

SILICON

RECTIFIER DIODE

SINGLE

100 V

HIGH RELIABILITY, METALLURGICALLY BONDED

ULTRA FAST RECOVERY

125 A

O-LALF-W2

175 °C

-65 °C

ISOLATED

GLASS

ROUND

LONG FORM

TIN LEAD

WIRE

AXIAL

MICROCHIP TECHNOLOGY INC

compliant

HERMETIC SEALED, GLASS PACKAGE-2

Microchip

1N5809E3

Microchip Technology Inc

$7.4257

Yes

Active

3 A

875 mV

30 ns

5 µA

SILICON

RECTIFIER DIODE

SINGLE

100 V

AVALANCHE

HIGH RELIABILITY

ULTRA FAST RECOVERY POWER

125 A

O-LALF-W2

175 °C

-65 °C

ISOLATED

GLASS

ROUND

LONG FORM

MATTE TIN OVER NICKEL

WIRE

AXIAL

MICROCHIP TECHNOLOGY INC

compliant

ROHS COMPLIANT, HERMETIC SEALED, GLASS, B PACKAGE-2

Microchip

JANTX1N5809

Microchip Technology Inc

$7.4717

Active

3 A

30 ns

SILICON

RECTIFIER DIODE

SINGLE

100 V

HIGH RELIABILITY, METALLURGICALLY BONDED

ULTRA FAST RECOVERY

125 A

Qualified

O-LALF-W2

MIL-19500

175 °C

-65 °C

ISOLATED

GLASS

ROUND

LONG FORM

TIN LEAD

WIRE

AXIAL

MICROCHIP TECHNOLOGY INC

compliant

HERMETIC SEALED, GLASS PACKAGE-2

1N5809US

Sensitron Semiconductors

$7.4951

Active

6 A

925 mV

30 ns

5 µA

SILICON

RECTIFIER DIODE

SINGLE

YES

100 V

HIGH RELIABILITY, METALLURGICALLY BONDED

ULTRA FAST RECOVERY

125 A

Not Qualified

E-LELF-R2

175 °C

-65 °C

ISOLATED

GLASS

ELLIPTICAL

LONG FORM

TIN LEAD

WRAP AROUND

END

SENSITRON SEMICONDUCTOR

compliant

EAR99

MELF-B, 2 PIN

MELF

8541.10.00.80

JANTX1N5809/TR

Microchip Technology Inc

$7.5438

Active

3 A

30 ns

SILICON

RECTIFIER DIODE

SINGLE

100 V

HIGH RELIABILITY, METALLURGICALLY BONDED

ULTRA FAST RECOVERY

125 A

Qualified

O-LALF-W2

MIL-19500

175 °C

-65 °C

NOT SPECIFIED

ISOLATED

GLASS

ROUND

LONG FORM

TIN LEAD

WIRE

AXIAL

MICROCHIP TECHNOLOGY INC

unknown

EAR99

8541.10.00.80

1N5809E3/TR

Microchip Technology Inc

$7.6021

Yes

Active

6 A

30 µs

SILICON

RECTIFIER DIODE

SINGLE

100 V

HIGH RELIABILITY

GENERAL PURPOSE

125 A

O-GALF-W2

ISOLATED

CERAMIC, GLASS-SEALED

ROUND

LONG FORM

MATTE TIN OVER NICKEL

WIRE

AXIAL

MICROCHIP TECHNOLOGY INC

compliant

EAR99

HERMETIC SEALED, GLASS, E, 2 PIN

Microchip

8541.10.00.80

JAN1N5809US

Microchip Technology Inc

$8.2755

Active

3 A

875 mV

30 ns

5 W

SILICON

RECTIFIER DIODE

SINGLE

YES

100 V

HIGH RELIABILITY

ULTRA FAST RECOVERY

125 A

Qualified

O-LELF-R2

MIL-19500/477

175 °C

-65 °C

ISOLATED

GLASS

ROUND

LONG FORM

TIN LEAD

WRAP AROUND

END

MICROCHIP TECHNOLOGY INC

compliant

HERMETIC SEALED, GLASS, D-5B, 2 PIN

1N5809US

Microchip Technology Inc

$8.5946

Active

3 A

30 ns

SILICON

RECTIFIER DIODE

SINGLE

YES

100 V

HIGH RELIABILITY, METALLURGICALLY BONDED

ULTRA FAST RECOVERY

125 A

O-LELF-R2

175 °C

-65 °C

ISOLATED

GLASS

ROUND

LONG FORM

TIN LEAD OVER NICKEL

WRAP AROUND

END

MICROCHIP TECHNOLOGY INC

compliant

HERMETIC SEALED, GLASS, MELF-2

Microchip

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