Parametric results for: 1N5821 under Rectifier Diodes
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1N5821
Diotec Semiconductor AG
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$0.1227 | Yes | Active | 3 A | 900 mV | SILICON | RECTIFIER DIODE | SINGLE | NO | 30 V | 1 | SCHOTTKY | GENERAL PURPOSE | 150 A | 1 | Not Qualified | O-PALF-W2 | e3 | DO-201 | 150 °C | -50 °C | 260 | 10 | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | MATTE TIN | WIRE | AXIAL | DIOTEC SEMICONDUCTOR AG | DO-201 | ROHS COMPLIANT, PLASTIC PACKAGE-2 | 2 | not_compliant | EAR99 | 8541.10.00.80 | Diotec | |||||||
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1N5821-TP
Micro Commercial Components
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$0.1990 | Yes | Yes | Active | 3 A | 500 mV | 100 µA | SILICON | RECTIFIER DIODE | SINGLE | NO | 30 V | 1 | SCHOTTKY | LOW NOISE | GENERAL PURPOSE | 80 A | 1 | Not Qualified | O-PALF-W2 | e3 | DO-201AD | 1 | 125 °C | 260 | 10 | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | Matte Tin (Sn) | WIRE | AXIAL | MICRO COMMERCIAL COMPONENTS CORP | DO-201AD | O-PALF-W2 | 2 | not_compliant | EAR99 | 8541.10.00.80 | |||||
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1N5821RL
onsemi
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$0.2122 | Yes | Obsolete | 3 A | 900 mV | SILICON | RECTIFIER DIODE | SINGLE | NO | 30 V | 1 | SCHOTTKY | LOW POWER LOSS, FREE WHEELING DIODE | EFFICIENCY | 80 A | 1 | Not Qualified | O-PALF-W2 | e3 | DO-201AD | 125 °C | 260 | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | TIN | WIRE | AXIAL | ON SEMICONDUCTOR | Axial Lead 9.65x5.33mm, 25.4x1.22mm Pkg, Lead len/dia | PLASTIC, CASE 267-05, 2 PIN | 2 | not_compliant | EAR99 | 8541.10.00.80 | onsemi | 267-05 | |||||||
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1N5821-T
Diodes Incorporated
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$0.2285 | No | Yes | Obsolete | 3 A | 500 mV | SILICON | RECTIFIER DIODE | SINGLE | NO | 30 V | 1 | SCHOTTKY | FREE WHEELING DIODE, LOW POWER LOSS | EFFICIENCY | 80 A | 1 | Not Qualified | O-PALF-W2 | e3 | DO-201AD | 1 | 125 °C | 260 | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | Matte Tin (Sn) | WIRE | AXIAL | DIODES INC | DO-201AD | ROHS COMPLIANT, PLASTIC PACKAGE-2 | 2 | not_compliant | EAR99 | 8541.10.00.80 | |||||||
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1N5821-E3/54
Vishay Semiconductors
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$0.2295 | Yes | Yes | Active | 3 A | 500 mV | SILICON | RECTIFIER DIODE | SINGLE | NO | 30 V | 1 | SCHOTTKY | FREE WHEELING DIODE | FAST RECOVERY | 80 A | 1 | Not Qualified | O-PALF-W2 | e3 | DO-201AD | -65 °C | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | MATTE TIN | WIRE | AXIAL | VISHAY SEMICONDUCTORS | DO-201AD | O-PALF-W2 | 2 | unknown | EAR99 | 8541.10.00.80 | Vishay | ||||||||
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1N5821
onsemi
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$0.2362 | Yes | Obsolete | 3 A | 900 mV | SILICON | RECTIFIER DIODE | SINGLE | NO | 30 V | 1 | SCHOTTKY | LOW POWER LOSS, FREE WHEELING DIODE | EFFICIENCY | 80 A | 1 | Not Qualified | O-PALF-W2 | e3 | DO-201AD | 125 °C | -65 °C | 260 | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | TIN | WIRE | AXIAL | ONSEMI | DO-201AD | PLASTIC, CASE 267-05, 2 PIN | 2 | not_compliant | EAR99 | 8541.10.00.80 | onsemi | 017AF | ||||||
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1N5821G
onsemi
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$0.2385 | Yes | Obsolete | 3 A | 380 mV | SILICON | RECTIFIER DIODE | SINGLE | NO | 30 V | 1 | SCHOTTKY | LOW POWER LOSS, FREE WHEELING DIODE | EFFICIENCY | 80 A | 1 | Not Qualified | O-PALF-W2 | e3 | DO-201AD | 125 °C | -65 °C | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | MATTE TIN | WIRE | AXIAL | ONSEMI | Axial Lead 9.65x5.33mm, 25.4x1.22mm Pkg, Lead len/dia | LEAD FREE, PLASTIC, CASE 267-05, 2 PIN | 2 | not_compliant | EAR99 | 8541.10.00.80 | onsemi | 267-05 | |||||||
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1N5821RLG
onsemi
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$0.3031 | Yes | Active | 3 A | 380 mV | SILICON | RECTIFIER DIODE | SINGLE | NO | 30 V | 1 | SCHOTTKY | LOW POWER LOSS, FREE WHEELING DIODE | EFFICIENCY | 80 A | 1 | Not Qualified | O-PALF-W2 | e3 | DO-201AD | 125 °C | -65 °C | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | Matte Tin (Sn) - annealed | WIRE | AXIAL | ONSEMI | Axial Lead 9.65x5.33mm, 25.4x1.22mm Pkg, Lead len/dia | LEAD FREE, PLASTIC, CASE 267-05, 2 PIN | 2 | not_compliant | EAR99 | 8541.10.00.80 | onsemi | 267-05 | |||||||
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1N5821
Taiwan Semiconductor
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$0.3271 | Yes | Active | 3 A | 900 mV | SILICON | RECTIFIER DIODE | SINGLE | NO | 30 V | 1 | SCHOTTKY | FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS | EFFICIENCY | 70 A | 1 | Not Qualified | O-PALF-W2 | e3 | DO-201AD | 1 | 125 °C | -65 °C | 260 | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | Matte Tin (Sn) | WIRE | AXIAL | TAIWAN SEMICONDUCTOR CO LTD | not_compliant | EAR99 | 8541.10.00.80 | Taiwan Semiconductor | |||||||||
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1N5821US
Microchip Technology Inc
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$17.1094 | No | Active | 3 A | 400 mV | SILICON | RECTIFIER DIODE | SINGLE | YES | 30 V | 1 | SCHOTTKY | METALLURGICALLY BONDED | GENERAL PURPOSE | 1 | Not Qualified | O-LELF-R2 | e0 | 125 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, D5B, 2 PIN | compliant | Microchip |