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JANTX1N5822US.TR
Semtech Corporation
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$49.5622 | Transferred | 3 A | 700 mV | 100 µA | SILICON | RECTIFIER DIODE | SINGLE | YES | 40 V | 1 | SCHOTTKY | HIGH RELIABILITY | GENERAL PURPOSE | 80 A | 1 | 40 V | O-LELF-R2 | MIL-19500 | 125 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | SEMTECH CORP | unknown | EAR99 | SEMTECH | ||||||||||
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MNS1N5822US/TR
Microchip Technology Inc
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$67.4797 | Active | RECTIFIER DIODE | NOT SPECIFIED | NOT SPECIFIED | MICROCHIP TECHNOLOGY INC | unknown | EAR99 | Microchip | |||||||||||||||||||||||||||||||||
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JANTX1N5822US/TR
Microchip Technology Inc
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$67.7289 | No | Active | 3 A | 700 mV | 100 nA | SILICON | RECTIFIER DIODE | SINGLE | YES | 40 V | 1 | SCHOTTKY | HIGH RELIABILITY | GENERAL PURPOSE | 80 A | 1 | 40 V | O-LELF-R2 | MIL-19500 | 125 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | compliant | EAR99 | 8541.10.00.80 | |||||||||
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JANS1N5822US/TR
Microchip Technology Inc
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$220.4801 | Active | 3 A | SILICON | RECTIFIER DIODE | SINGLE | YES | 40 V | 1 | SCHOTTKY | METALLURGICALLY BONDED | GENERAL PURPOSE | 80 A | 1 | Qualified | O-LELF-R2 | e0 | MIL-19500/620E | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | unknown | EAR99 | Microchip | 8541.10.00.80 | |||||||||
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JANTX1N5822USTR
Microsemi Corporation
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Check for Price | Transferred | 3 A | 700 mV | 100 nA | SILICON | RECTIFIER DIODE | SINGLE | YES | 40 V | 1 | SCHOTTKY | HIGH RELIABILITY | GENERAL PURPOSE | 80 A | 1 | 40 V | O-LELF-R2 | MIL-19500 | 125 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROSEMI CORP | unknown | EAR99 | 8541.10.00.80 | ||||||||||
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JAN1N5822US/TR
Microsemi Corporation
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Check for Price | Transferred | RECTIFIER DIODE | MICROSEMI CORP | unknown | Microsemi Corporation | ||||||||||||||||||||||||||||||||||||
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JANS1N5822US.TR
Semtech Corporation
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Check for Price | Transferred | 3 A | 700 mV | 100 µA | SILICON | RECTIFIER DIODE | SINGLE | YES | 40 V | 1 | SCHOTTKY | HIGH RELIABILITY | GENERAL PURPOSE | 80 A | 1 | 40 V | O-LELF-R2 | MIL-19500 | 125 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | SEMTECH CORP | unknown | EAR99 | MELF-2 | ||||||||||
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1N5822US/TR
Microsemi Corporation
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Check for Price | Transferred | RECTIFIER DIODE | MICROSEMI CORP | unknown | Microsemi Corporation | ||||||||||||||||||||||||||||||||||||
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JANS1N5822US.TR
Micross Components
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Check for Price | Active | RECTIFIER DIODE | MICROSS COMPONENTS | unknown | |||||||||||||||||||||||||||||||||||||
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JANTXV1N5822US.TR
Semtech Corporation
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Check for Price | Transferred | 3 A | 700 mV | 100 µA | SILICON | RECTIFIER DIODE | SINGLE | YES | 40 V | 1 | SCHOTTKY | HIGH RELIABILITY | GENERAL PURPOSE | 80 A | 1 | 40 V | O-LELF-R2 | MIL-19500 | 125 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | SEMTECH CORP | unknown | EAR99 | SEMTECH |