Parametric results for: 1N6147AUS under Transient Suppressors

All Filters Additional Feature Breakdown Voltage-Min Breakdown Voltage-Nom Case Connection Clamping Voltage-Max Configuration Diode Element Material Diode Type JESD-30 Code JESD-609 Code Manufacturer Number of Elements Polarity Power Dissipation-Max Rep Pk Reverse Voltage-Max Reverse Current-Max Surface Mount Technology

HIGH RELIABILITY 4 TRAY 4

32 hits Apply

Breakdown Voltage-Min (1)

15.2 V 21

32 hits Apply

Breakdown Voltage-Nom (1)

15.2 V 1

32 hits Apply

ISOLATED 31

32 hits Apply

Clamping Voltage-Max (1)

22.3 V 10

32 hits Apply

Configuration (1)

SINGLE 32

32 hits Apply

Diode Element Material (1)

SILICON 32

32 hits Apply

Diode Type (1)

TRANS VOLTAGE SUPPRESSOR DIODE 32

32 hits Apply

O-LELF-R2 24 O-XELF-N2 8

32 hits Apply

e0 17 e3 1

32 hits Apply

Manufacturer (6)

Defense Logistics Agency 4 Microchip Technology Inc 7 Microsemi Corporation 7 Micross Components 5 Semtech Corporation 5 Sensitron Semiconductors 4

32 hits Apply

Number of Elements (1)

1 32

32 hits Apply

Polarity (2)

BIDIRECTIONAL 10 UNIDIRECTIONAL 22

32 hits Apply

Power Dissipation-Max (2)

3 W 9 7.5 W 12

Min (W) - Max (W)

32 hits Apply

Rep Pk Reverse Voltage-Max (1)

12.2 V 28

32 hits Apply

Reverse Current-Max (1)

20 µA 4

32 hits Apply

Surface Mount (1)

YES 32

32 hits Apply

Technology (2)

AVALANCHE 24 ZENER 8

32 hits Apply