Parametric results for: 1N6170US under Transient Suppressors

All Filters Additional Feature Breakdown Voltage-Min Breakdown Voltage-Nom Case Connection Clamping Voltage-Max Configuration Diode Element Material Diode Type JESD-30 Code JESD-609 Code Manufacturer Number of Elements Polarity Power Dissipation-Max Rep Pk Reverse Voltage-Max Reverse Current-Max Surface Mount Technology

HIGH RELIABILITY 3 TRAY 4

31 hits Apply

Breakdown Voltage-Min (2)

135 V 16 135.38 V 4

Min (V) - Max (V)

31 hits Apply

Breakdown Voltage-Nom (1)

135 V 1

31 hits Apply

ISOLATED 29

31 hits Apply

Clamping Voltage-Max (2)

216 V 7 216.2 V 5

Min (V) - Max (V)

31 hits Apply

Configuration (1)

SINGLE 31

31 hits Apply

Diode Element Material (1)

SILICON 31

31 hits Apply

Diode Type (1)

TRANS VOLTAGE SUPPRESSOR DIODE 31

31 hits Apply

O-LELF-R2 23 O-XELF-N2 7

31 hits Apply

e0 15 e3 1

31 hits Apply

Manufacturer (7)

Defense Logistics Agency 4 Microchip Technology Inc 5 Microsemi Corporation 7 Micross Components 5 New Jersey Semiconductor Products Inc 1 Semtech Corporation 5 Sensitron Semiconductors 4

31 hits Apply

Number of Elements (1)

1 31

31 hits Apply

Polarity (2)

BIDIRECTIONAL 10 UNIDIRECTIONAL 21

31 hits Apply

Power Dissipation-Max (2)

3 W 8 7.5 W 11

Min (W) - Max (W)

31 hits Apply

Rep Pk Reverse Voltage-Max (1)

114 V 27

31 hits Apply

Reverse Current-Max (1)

5 µA 4

31 hits Apply

Surface Mount (1)

YES 30

31 hits Apply

Technology (2)

AVALANCHE 24 ZENER 7

31 hits Apply