Findchips: Parametric Search Results for 1N648-1

Parametric results for: 1N648-1 under Rectifier Diodes

Select parts from the table below to compare.

Compare


Select Parts		Part Number

		1N6481-E3/96 Vishay Intertechnologies
		1N648-1 Microchip Technology Inc
		1N648-1 Microsemi Corporation
		1N6481HE3/96 Vishay Intertechnologies
		1N6481HE3/97 Vishay Intertechnologies
		1N6481-E3/97 Vishay Semiconductors
		1N6481 International Semiconductor Inc
		JANTXV1N648-1 Microsemi Corporation
		1N648-1E3 Microsemi Corporation
		1N6481 General Instrument Corp

				Most Relevant											Technical					Compliance					Operating Conditions					Physical								Other
Composite Price	Pbfree Code	Rohs Code	Part Life Cycle Code	Output Current-Max	Forward Voltage-Max (VF)	Reverse Recovery Time-Max	Reverse Current-Max	Power Dissipation-Max	Diode Element Material	Diode Type	Configuration	Surface Mount	Rep Pk Reverse Voltage-Max	Number of Elements	Additional Feature	Application	Non-rep Pk Forward Current-Max	Number of Phases	Reverse Test Voltage	Qualification Status	JESD-30 Code	JESD-609 Code	Reference Standard	JEDEC-95 Code	Moisture Sensitivity Level	Operating Temperature-Max	Operating Temperature-Min	Peak Reflow Temperature (Cel)	Time@Peak Reflow Temperature-Max (s)	Case Connection	Number of Terminals	Package Body Material	Package Shape	Package Style	Terminal Finish	Terminal Form	Terminal Position	Ihs Manufacturer	Package Description	Reach Compliance Code	Samacsys Manufacturer	Part Package Code	Pin Count	ECCN Code	HTS Code

$0.2061

Yes

Active

1 A

1.1 V

10 µA

SILICON

RECTIFIER DIODE

SINGLE

YES

400 V

FREE WHEELING DIODE, HIGH RELIABILITY

GENERAL PURPOSE

30 A

400 V

Not Qualified

O-PELF-R2

DO-213AB

175 °C

-65 °C

250

ISOLATED

PLASTIC/EPOXY

ROUND

LONG FORM

MATTE TIN

WRAP AROUND

END

VISHAY INTERTECHNOLOGY INC

ROHS COMPLIANT, PLASTIC PACKAGE-2

compliant

Vishay

$3.1159

Active

400 mA

500 mW

SILICON

RECTIFIER DIODE

SINGLE

METALLURGICALLY BONDED

GENERAL PURPOSE

Not Qualified

O-LALF-W2

DO-35

ISOLATED

GLASS

ROUND

LONG FORM

TIN LEAD

WIRE

AXIAL

MICROCHIP TECHNOLOGY INC

HERMETIC SEALED, GLASS PACKAGE-2

compliant

Check for Price

Transferred

400 mA

500 mW

SILICON

RECTIFIER DIODE

SINGLE

METALLURGICALLY BONDED

GENERAL PURPOSE

Not Qualified

O-LALF-W2

DO-35

ISOLATED

GLASS

ROUND

LONG FORM

TIN LEAD

WIRE

AXIAL

MICROSEMI CORP

HERMETIC SEALED, GLASS PACKAGE-2

unknown

DO-35

EAR99

8541.10.00.70

Check for Price

Yes

Obsolete

1 A

1.1 V

10 µA

SILICON

RECTIFIER DIODE

SINGLE

YES

400 V

FREE WHEELING DIODE, HIGH RELIABILITY

GENERAL PURPOSE

30 A

400 V

Not Qualified

O-PELF-R2

DO-213AB

175 °C

-65 °C

250

PLASTIC/EPOXY

ROUND

LONG FORM

MATTE TIN

WRAP AROUND

END

VISHAY INTERTECHNOLOGY INC

ROHS COMPLIANT, PLASTIC PACKAGE-2

compliant

Vishay

Check for Price

Yes

Obsolete

1 A

1.1 V

10 µA

SILICON

RECTIFIER DIODE

SINGLE

YES

400 V

FREE WHEELING DIODE, HIGH RELIABILITY

GENERAL PURPOSE

30 A

400 V

Not Qualified

O-PELF-R2

DO-213AB

175 °C

-65 °C

250

PLASTIC/EPOXY

ROUND

LONG FORM

MATTE TIN

WRAP AROUND

END

VISHAY INTERTECHNOLOGY INC

MELF-2

compliant

Vishay

Check for Price

Yes

Active

1 A

1.1 V

10 µA

SILICON

RECTIFIER DIODE

SINGLE

YES

400 V

FREE WHEELING DIODE, HIGH RELIABILITY

GENERAL PURPOSE

30 A

400 V

Not Qualified

O-PELF-R2

DO-213AB

175 °C

-65 °C

250

ISOLATED

PLASTIC/EPOXY

ROUND

LONG FORM

MATTE TIN

WRAP AROUND

END

VISHAY SEMICONDUCTORS

O-PELF-R2

unknown

DO-213AB

EAR99

8541.10.00.80

Check for Price

Obsolete

1 A

1 V

50 ns

SILICON

RECTIFIER DIODE

SINGLE

YES

400 V

30 A

Not Qualified

O-LELF-R2

DO-213AB

175 °C

ISOLATED

GLASS

ROUND

LONG FORM

WRAP AROUND

END

INTERNATIONAL SEMICONDUCTOR INC

O-LELF-R2

unknown

DO-213AB

EAR99

8541.10.00.80

Check for Price

Obsolete

400 mA

600 mW

SILICON

RECTIFIER DIODE

SINGLE

500 V

HIGH RELIABILITY

GENERAL PURPOSE

Not Qualified

O-LALF-W2

MIL-S-19500

DO-35

175 °C

-65 °C

ISOLATED

GLASS

ROUND

LONG FORM

TIN LEAD

WIRE

AXIAL

MICROSEMI CORP

O-LALF-W2

compliant

EAR99

8541.10.00.70

Check for Price

Transferred

400 mA

500 mW

SILICON

RECTIFIER DIODE

SINGLE

METALLURGICALLY BONDED

GENERAL PURPOSE

O-LALF-W2

DO-35

ISOLATED

GLASS

ROUND

LONG FORM

WIRE

AXIAL

MICROSEMI CORP

HERMETIC SEALED, GLASS PACKAGE-2

compliant

EAR99

8541.10.00.70

Check for Price

Obsolete

1 A

SILICON

RECTIFIER DIODE

SINGLE

YES

400 V

PATENTED DEVICE

Not Qualified

O-PELF-R2

DO-213AB

175 °C

-65 °C

ISOLATED

PLASTIC/EPOXY

ROUND

LONG FORM

WRAP AROUND

END

GENERAL INSTRUMENT CORP

PLASTIC PACKAGE-2

unknown

1 2 Next

Compare

1N6481-E3/96

Vishay Intertechnologies

$0.2061

Yes

Active

1 A

1.1 V

10 µA

SILICON

RECTIFIER DIODE

SINGLE

YES

400 V

FREE WHEELING DIODE, HIGH RELIABILITY

GENERAL PURPOSE

30 A

400 V

Not Qualified

O-PELF-R2

DO-213AB

175 °C

-65 °C

250

ISOLATED

PLASTIC/EPOXY

ROUND

LONG FORM

MATTE TIN

WRAP AROUND

END

VISHAY INTERTECHNOLOGY INC

ROHS COMPLIANT, PLASTIC PACKAGE-2

compliant

Vishay

1N648-1

Microchip Technology Inc

$3.1159

Active

400 mA

500 mW

SILICON

RECTIFIER DIODE

SINGLE

METALLURGICALLY BONDED

GENERAL PURPOSE

Not Qualified

O-LALF-W2

DO-35

ISOLATED

GLASS

ROUND

LONG FORM

TIN LEAD

WIRE

AXIAL

MICROCHIP TECHNOLOGY INC

HERMETIC SEALED, GLASS PACKAGE-2

compliant

1N648-1

Microsemi Corporation

Check for Price

Transferred

400 mA

500 mW

SILICON

RECTIFIER DIODE

SINGLE

METALLURGICALLY BONDED

GENERAL PURPOSE

Not Qualified

O-LALF-W2

DO-35

ISOLATED

GLASS

ROUND

LONG FORM

TIN LEAD

WIRE

AXIAL

MICROSEMI CORP

HERMETIC SEALED, GLASS PACKAGE-2

unknown

DO-35

EAR99

8541.10.00.70

1N6481HE3/96

Vishay Intertechnologies

Check for Price

Yes

Obsolete

1 A

1.1 V

10 µA

SILICON

RECTIFIER DIODE

SINGLE

YES

400 V

FREE WHEELING DIODE, HIGH RELIABILITY

GENERAL PURPOSE

30 A

400 V

Not Qualified

O-PELF-R2

DO-213AB

175 °C

-65 °C

250

PLASTIC/EPOXY

ROUND

LONG FORM

MATTE TIN

WRAP AROUND

END

VISHAY INTERTECHNOLOGY INC

ROHS COMPLIANT, PLASTIC PACKAGE-2

compliant

Vishay

1N6481HE3/97

Vishay Intertechnologies

Check for Price

Yes

Obsolete

1 A

1.1 V

10 µA

SILICON

RECTIFIER DIODE

SINGLE

YES

400 V

FREE WHEELING DIODE, HIGH RELIABILITY

GENERAL PURPOSE

30 A

400 V

Not Qualified

O-PELF-R2

DO-213AB

175 °C

-65 °C

250

PLASTIC/EPOXY

ROUND

LONG FORM

MATTE TIN

WRAP AROUND

END

VISHAY INTERTECHNOLOGY INC

MELF-2

compliant

Vishay

1N6481-E3/97

Vishay Semiconductors

Check for Price

Yes

Active

1 A

1.1 V

10 µA

SILICON

RECTIFIER DIODE

SINGLE

YES

400 V

FREE WHEELING DIODE, HIGH RELIABILITY

GENERAL PURPOSE

30 A

400 V

Not Qualified

O-PELF-R2

DO-213AB

175 °C

-65 °C

250

ISOLATED

PLASTIC/EPOXY

ROUND

LONG FORM

MATTE TIN

WRAP AROUND

END

VISHAY SEMICONDUCTORS

O-PELF-R2

unknown

DO-213AB

EAR99

8541.10.00.80

1N6481

International Semiconductor Inc

Check for Price

Obsolete

1 A

1 V

50 ns

SILICON

RECTIFIER DIODE

SINGLE

YES

400 V

30 A

Not Qualified

O-LELF-R2

DO-213AB

175 °C

ISOLATED

GLASS

ROUND

LONG FORM

WRAP AROUND

END

INTERNATIONAL SEMICONDUCTOR INC

O-LELF-R2

unknown

DO-213AB

EAR99

8541.10.00.80

JANTXV1N648-1

Microsemi Corporation

Check for Price

Obsolete

400 mA

600 mW

SILICON

RECTIFIER DIODE

SINGLE

500 V

HIGH RELIABILITY

GENERAL PURPOSE

Not Qualified

O-LALF-W2

MIL-S-19500

DO-35

175 °C

-65 °C

ISOLATED

GLASS

ROUND

LONG FORM

TIN LEAD

WIRE

AXIAL

MICROSEMI CORP

O-LALF-W2

compliant

EAR99

8541.10.00.70

1N648-1E3

Microsemi Corporation

Check for Price

Transferred

400 mA

500 mW

SILICON

RECTIFIER DIODE

SINGLE

METALLURGICALLY BONDED

GENERAL PURPOSE

O-LALF-W2

DO-35

ISOLATED

GLASS

ROUND

LONG FORM

WIRE

AXIAL

MICROSEMI CORP

HERMETIC SEALED, GLASS PACKAGE-2

compliant

EAR99

8541.10.00.70

1N6481

General Instrument Corp

Check for Price

Obsolete

1 A

SILICON

RECTIFIER DIODE

SINGLE

YES

400 V

PATENTED DEVICE

Not Qualified

O-PELF-R2

DO-213AB

175 °C

-65 °C

ISOLATED

PLASTIC/EPOXY

ROUND

LONG FORM

WRAP AROUND

END

GENERAL INSTRUMENT CORP

PLASTIC PACKAGE-2

unknown

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