Parametric results for: 1N649 under Rectifier Diodes
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1N649-1
Microchip Technology Inc
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$1.7996 | No | Active | 400 mA | 500 mW | SILICON | RECTIFIER DIODE | SINGLE | NO | 600 V | 1 | METALLURGICALLY BONDED | 1 | Not Qualified | O-LALF-W2 | e0 | DO-35 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | Tin/Lead (Sn/Pb) | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS PACKAGE-2 | compliant | ||||||||||||||||||||
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1N649-1/TR
Microchip Technology Inc
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$2.7817 | No | Active | 400 mA | 1 V | 50 nA | 500 mW | SILICON | RECTIFIER DIODE | SINGLE | NO | 600 V | 1 | GENERAL PURPOSE | 5 A | 1 | 600 V | O-LALF-W2 | DO-35 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | compliant | ||||||||||||||||||
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1N649-1
Microsemi Corporation
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$2.8661 | No | No | Transferred | 400 mA | 500 mW | SILICON | RECTIFIER DIODE | SINGLE | NO | 600 V | 1 | METALLURGICALLY BONDED | 1 | Not Qualified | O-LALF-W2 | e0 | DO-35 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | HERMETIC SEALED, GLASS PACKAGE-2 | compliant | DO-35 | 2 | EAR99 | 8541.10.00.70 | Microsemi Corporation | ||||||||||||||
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1N649UR-1
Microchip Technology Inc
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$4.3671 | No | Active | 400 mA | 500 mW | SILICON | RECTIFIER DIODE | SINGLE | YES | 600 V | 1 | 1 | O-LELF-R2 | e0 | DO-213AA | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS PACKAGE-2 | compliant | ||||||||||||||||||||
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1N649/TR
Microchip Technology Inc
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$4.4371 | Active | RECTIFIER DIODE | MICROCHIP TECHNOLOGY INC | unknown | EAR99 | ||||||||||||||||||||||||||||||||||||||||||
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1N649UR-1/TR
Microchip Technology Inc
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$4.5471 | Active | 400 mA | 500 mW | SILICON | RECTIFIER DIODE | SINGLE | YES | 600 V | 1 | 1 | O-LELF-R2 | e0 | DO-213AA | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | unknown | EAR99 | 8541.10.00.70 | ||||||||||||||||||||
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1N649UR-1
Microsemi Corporation
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$4.8216 | No | No | Transferred | 400 mA | 500 mW | SILICON | RECTIFIER DIODE | SINGLE | YES | 600 V | 1 | 1 | O-LELF-R2 | e0 | DO-213AA | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROSEMI CORP | HERMETIC SEALED, GLASS PACKAGE-2 | unknown | DO-213AA | 2 | EAR99 | 8541.10.00.70 | Microsemi Corporation | ||||||||||||||
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1N6490
Microchip Technology Inc
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$11.4360 | No | Active | 49 mA | 1.5 W | 5.1 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED | 5 % | O-LALF-W2 | e0 | DO-41 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS PACKAGE-2 | compliant | |||||||||||||||||
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1N6490US
Microsemi Corporation
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$12.0348 | No | Transferred | 49 mA | 1.5 W | 5.1 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | YES | 1 | ZENER | METALLURGICALLY BONDED | 5 % | Not Qualified | O-LELF-R2 | e0 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROSEMI CORP | HERMETIC SEALED, GLASS PACKAGE-2 | unknown | Microsemi Corporation | ||||||||||||||||||
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1N6490US
Microchip Technology Inc
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$13.0314 | No | Active | 49 mA | 1.5 W | 5.1 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | YES | 1 | ZENER | METALLURGICALLY BONDED | 5 % | Not Qualified | O-LELF-R2 | e0 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | compliant |