Parametric results for: 1N6641US under Rectifier Diodes

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Manufacturer Part Number: 1n6641us
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1N6641US
Microsemi Corporation
$9.1749 No No Transferred 300 mA 1.1 V 5 ns 100 nA SILICON RECTIFIER DIODE SINGLE YES 1 2.5 A 1 Not Qualified O-LELF-R2 e0 175 °C -65 °C ISOLATED 2 GLASS ROUND LONG FORM TIN LEAD WRAP AROUND END MICROSEMI CORP HERMETIC SEALED, GLASS, D-5D, 2 PIN 2 unknown EAR99 8541.10.00.70
1N6641US
Microchip Technology Inc
$10.0005 No Active 300 mA 1.1 V 5 ns 100 nA SILICON RECTIFIER DIODE SINGLE YES 1 2.5 A 1 Not Qualified O-LELF-R2 e0 175 °C -65 °C ISOLATED 2 GLASS ROUND LONG FORM TIN LEAD WRAP AROUND END MICROCHIP TECHNOLOGY INC HERMETIC SEALED, GLASS, D-5D, 2 PIN compliant
JAN1N6641US
Microchip Technology Inc
$10.1998 No Active 300 mA 5 ns SILICON RECTIFIER DIODE SINGLE YES 1 METALLURGICALLY BONDED 1 Qualified O-XELF-R2 e0 MIL-19500/609D ISOLATED 2 UNSPECIFIED ROUND LONG FORM TIN LEAD WRAP AROUND END MICROCHIP TECHNOLOGY INC SURFACE MOUNT PACKAGE-2 compliant
JANTX1N6641US
Microchip Technology Inc
$11.5152 No Active 300 mA 1.1 V 5 ns 100 nA SILICON RECTIFIER DIODE SINGLE YES 1 METALLURGICALLY BONDED 2.5 A 1 Qualified O-XELF-R2 e0 MIL-19500/609D 175 °C -65 °C ISOLATED 2 UNSPECIFIED ROUND LONG FORM TIN LEAD WRAP AROUND END MICROCHIP TECHNOLOGY INC SURFACE MOUNT PACKAGE-2 compliant
JANTX1N6641US/TR
Microchip Technology Inc
$11.6723 Active 300 mA 1.1 V 5 ns 100 nA SILICON RECTIFIER DIODE SINGLE YES 1 METALLURGICALLY BONDED 2.5 A 1 Qualified O-XELF-R2 e0 MIL-19500/609D 175 °C -65 °C ISOLATED 2 UNSPECIFIED ROUND LONG FORM TIN LEAD WRAP AROUND END MICROCHIP TECHNOLOGY INC unknown EAR99 8541.10.00.70
JAN1N6641US
Microsemi Corporation
$11.8745 No No Transferred 300 mA 5 ns SILICON RECTIFIER DIODE SINGLE YES 1 METALLURGICALLY BONDED 1 Not Qualified O-XELF-R2 e0 MIL-19500/609D ISOLATED 2 UNSPECIFIED ROUND LONG FORM TIN LEAD WRAP AROUND END MICROSEMI CORP SURFACE MOUNT PACKAGE-2 2 unknown EAR99 8541.10.00.70
JANTX1N6641US
Microsemi Corporation
$13.3892 No No Transferred 300 mA 1.1 V 5 ns 100 nA SILICON RECTIFIER DIODE SINGLE YES 1 METALLURGICALLY BONDED 2.5 A 1 Not Qualified O-XELF-R2 e0 MIL-19500/609D 175 °C -65 °C ISOLATED 2 UNSPECIFIED ROUND LONG FORM TIN LEAD WRAP AROUND END MICROSEMI CORP SURFACE MOUNT PACKAGE-2 2 unknown EAR99 8541.10.00.70
JANTXV1N6641US
Microchip Technology Inc
$14.3127 No Active 300 mA 1.1 V 5 ns 100 nA SILICON RECTIFIER DIODE SINGLE YES 50 V 1 METALLURGICALLY BONDED 2.5 A 1 Qualified O-XELF-R2 e0 MIL-19500/609D 175 °C -65 °C ISOLATED 2 UNSPECIFIED ROUND LONG FORM TIN LEAD WRAP AROUND END MICROCHIP TECHNOLOGY INC SURFACE MOUNT PACKAGE-2 compliant
JANTXV1N6641US
Microsemi Corporation
$16.6430 No No Transferred 300 mA 1.1 V 5 ns 100 nA SILICON RECTIFIER DIODE SINGLE YES 50 V 1 METALLURGICALLY BONDED 2.5 A 1 Not Qualified O-XELF-R2 e0 MIL-19500/609D 175 °C -65 °C ISOLATED 2 UNSPECIFIED ROUND LONG FORM TIN LEAD WRAP AROUND END MICROSEMI CORP SURFACE MOUNT PACKAGE-2 2 not_compliant EAR99 8541.10.00.70
JANS1N6641US
Microchip Technology Inc
$86.5212 No Active 300 mA 1.1 V 5 ns 100 nA SILICON RECTIFIER DIODE SINGLE YES 1 METALLURGICALLY BONDED 2.5 A 1 Qualified O-XELF-R2 e0 MIL-19500/609D 175 °C -65 °C ISOLATED 2 UNSPECIFIED ROUND LONG FORM TIN LEAD WRAP AROUND END MICROCHIP TECHNOLOGY INC SURFACE MOUNT PACKAGE-2 compliant