Parametric results for: 1N938 under Zener Diodes
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1N938B
Microsemi Corporation
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$7.9500 | No | No | Transferred | 500 mW | 9 V | SILICON | ZENER DIODE | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED | 0.09 mV/°C | 5 % | O-LALF-W2 | e0 | DO-35 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | DO-7 | HERMETIC SEALED, GLASS PACKAGE-2 | 2 | not_compliant | EAR99 | 8541.10.00.50 | |||||||
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1N938B-1
Microsemi Corporation
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$8.7413 | No | No | Transferred | 500 mW | 9 V | SILICON | ZENER DIODE | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED | 0.09 mV/°C | 5 % | O-LALF-W2 | e0 | DO-35 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | Tin/Lead (Sn/Pb) | WIRE | AXIAL | MICROSEMI CORP | DO-7 | HERMETIC SEALED, GLASS PACKAGE-2 | 2 | unknown | EAR99 | 8541.10.00.50 | |||||||
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1N938A
Microsemi Corporation
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$8.7413 | No | No | Transferred | 500 mW | 9 V | SILICON | ZENER DIODE | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED | 0.09 mV/°C | 5 % | O-LALF-W2 | e0 | DO-35 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | DO-7 | HERMETIC SEALED, GLASS PACKAGE-2 | 2 | unknown | EAR99 | 8541.10.00.50 | Microsemi Corporation | ||||||||
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1N938
Microsemi Corporation
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$8.7413 | No | No | Transferred | 500 mW | 9 V | SILICON | ZENER DIODE | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED | 0.09 mV/°C | 5 % | O-LALF-W2 | e0 | DO-35 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | DO-7 | HERMETIC SEALED, GLASS PACKAGE-2 | 2 | unknown | EAR99 | 8541.10.00.50 | |||||||||
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1N938B
Microchip Technology Inc
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$9.3099 | No | Active | 7.5 mA | 500 mW | 9 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED | 0.09 mV/°C | 5 % | O-LALF-W2 | e0 | DO-35 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS PACKAGE-2 | compliant | ||||||||||
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1N938B-1
Microchip Technology Inc
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$9.3099 | No | Active | 7.5 mA | 500 mW | 9 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED | 0.09 mV/°C | 5 % | O-LALF-W2 | e0 | DO-35 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | Tin/Lead (Sn/Pb) | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS PACKAGE-2 | compliant | ||||||||||
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1N938B-1/TR
Microchip Technology Inc
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$9.4592 | No | Active | 7.5 mA | 500 mW | 9 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | METALLURGICAL BONDED | 0.09 mV/°C | 5 % | Not Qualified | O-LALF-W2 | e0 | DO-204AA | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETICALLY SEALED, GLASS, DO-7, 2 PIN | compliant | EAR99 | 8541.10.00.50 | |||||||
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1N938A
Microchip Technology Inc
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$10.0198 | No | Active | 7.5 mA | 500 mW | 9 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED | 0.09 mV/°C | 5 % | O-LALF-W2 | e0 | DO-35 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS PACKAGE-2 | compliant | ||||||||||||
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1N938
Microchip Technology Inc
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$10.0198 | No | Active | 7.5 mA | 500 mW | 9 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED | 0.09 mV/°C | 5 % | O-LALF-W2 | e0 | DO-35 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | Tin/Lead (Sn/Pb) | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS PACKAGE-2 | compliant | ||||||||||||
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1N938-1
Microchip Technology Inc
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$10.0198 | No | Active | 7.5 mA | 500 mW | 9 V | SILICON | ZENER DIODE | SINGLE | NO | 1 | ZENER | METALLURGICAL BONDED | 20 Ω | 0.09 mV/°C | 5 % | Not Qualified | O-LALF-W2 | e0 | DO-204AA | 75 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETICALLY SEALED, GLASS, DO-7, 2 PIN | compliant |