Parametric results for: 1N957B-1E3/TR under Zener Diodes
Filter Your Search
1 - 7 of 7 results
|
Select parts from the table below to compare.
Compare
Compare
|
|
1N957B-1E3/TR
Microchip Technology Inc
|
$3.8729 | Yes | Active | 1.1 V | 18.5 mA | 150 µA | 400 mW | 6.8 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED | 4.5 Ω | 700 Ω | 5.2 V | 3.4 mV/°C | 5 % | O-LALF-W2 | e3 | DO-204AH | 175 °C | -65 °C | 260 | 40 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | MATTE TIN | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-7, 2 PIN | compliant | EAR99 | 8541.10.00.50 | Microchip | ||||||
|
|
1N957B-1E3/TR
Microsemi Corporation
|
Check for Price | Yes | Transferred | 18.5 mA | 480 mW | 6.8 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED | 4.5 Ω | 5 % | O-LALF-W2 | e3 | DO-204AH | 175 °C | -65 °C | 260 | 40 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | MATTE TIN | WIRE | AXIAL | MICROSEMI CORP | O-LALF-W2 | compliant | EAR99 | 8541.10.00.50 | ||||||||||||
|
MSP1N957B-1E3TR
Microsemi Corporation
|
Check for Price | Yes | Yes | Obsolete | 18.5 mA | 417 mW | 6.8 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED | 5 % | Not Qualified | O-LALF-W2 | e3 | DO-204AA | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | MATTE TIN | WIRE | AXIAL | MICROSEMI CORP | O-LALF-W2 | compliant | EAR99 | 8541.10.00.50 | DO-7 | 2 | |||||||||||
|
|
MQ1N957B-1E3TR
Microsemi Corporation
|
Check for Price | Yes | Yes | Obsolete | 18.5 mA | 417 mW | 6.8 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED | 5 % | Not Qualified | O-LALF-W2 | e3 | DO-204AA | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | MATTE TIN | WIRE | AXIAL | MICROSEMI CORP | O-LALF-W2 | compliant | EAR99 | 8541.10.00.50 | DO-7 | 2 | |||||||||||
|
|
MX1N957B-1E3TR
Microsemi Corporation
|
Check for Price | Yes | Yes | Obsolete | 18.5 mA | 417 mW | 6.8 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED | 5 % | Not Qualified | O-LALF-W2 | e3 | DO-204AA | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | MATTE TIN | WIRE | AXIAL | MICROSEMI CORP | O-LALF-W2 | compliant | EAR99 | 8541.10.00.50 | DO-7 | 2 | |||||||||||
|
|
1N957B-1E3TR
Microsemi Corporation
|
Check for Price | Yes | Transferred | 18.5 mA | 480 mW | 6.8 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED | 4.5 Ω | 5 % | O-LALF-W2 | e3 | DO-204AH | 175 °C | -65 °C | 260 | 40 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | MATTE TIN | WIRE | AXIAL | MICROSEMI CORP | O-LALF-W2 | compliant | EAR99 | 8541.10.00.50 | DO-7 | 2 | ||||||||||
|
|
MV1N957B-1E3TR
Microsemi Corporation
|
Check for Price | Yes | Yes | Obsolete | 18.5 mA | 417 mW | 6.8 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED | 5 % | Not Qualified | O-LALF-W2 | e3 | DO-204AA | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | MATTE TIN | WIRE | AXIAL | MICROSEMI CORP | O-LALF-W2 | compliant | EAR99 | 8541.10.00.50 | DO-7 | 2 |