Parametric results for: 1n1186r under Rectifier Diodes
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1N1186R
GeneSic Semiconductor Inc
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$4.0234 | Yes | Yes | Active | 35 A | 1.2 V | 10 µA | SILICON | RECTIFIER DIODE | SINGLE | NO | 200 V | 1 | GENERAL PURPOSE | 595 A | 1 | O-MUPM-D1 | DO-5 | 190 °C | -65 °C | NOT SPECIFIED | NOT SPECIFIED | ANODE | 1 | METAL | ROUND | POST/STUD MOUNT | SOLDER LUG | UPPER | GENESIC SEMICONDUCTOR INC | compliant | EAR99 | 8541.10.00.80 | |||||||||||
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1N1186RA
Vishay Intertechnologies
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$4.1557 | Yes | Active | 40 A | SILICON | RECTIFIER DIODE | SINGLE | NO | 200 V | 1 | HIGH RELIABILITY | POWER | 800 A | 1 | Not Qualified | O-MUPM-D1 | e3 | DO-203AB | 200 °C | -65 °C | ANODE | 1 | METAL | ROUND | POST/STUD MOUNT | TIN OVER NICKEL | SOLDER LUG | UPPER | VISHAY INTERTECHNOLOGY INC | compliant | EAR99 | 8541.10.00.80 | DO-5 | ROHS COMPLIANT, DO-5, 1 PIN | 1 | |||||||||
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VS-1N1186R
Vishay Intertechnologies
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$5.6848 | Yes | Active | 35 A | 1.7 V | 10 mA | SILICON | RECTIFIER DIODE | SINGLE | NO | 200 V | 1 | LOW LEAKAGE CURRENT | POWER | 500 A | 1 | O-MUPM-D1 | e3 | DO-203AB | 190 °C | -65 °C | ANODE | 1 | METAL | ROUND | POST/STUD MOUNT | TIN OVER NICKEL | SOLDER LUG | UPPER | VISHAY INTERTECHNOLOGY INC | unknown | EAR99 | 8541.10.00.80 | DO-5, 1 PIN | Vishay | |||||||||
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VS-1N1186RA
Vishay Intertechnologies
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$6.0600 | Yes | Active | 40 A | 1.3 V | 2.5 mA | SILICON | RECTIFIER DIODE | SINGLE | NO | 200 V | 1 | LOW LEAKAGE CURRENT | POWER | 800 A | 1 | O-MUPM-D1 | e3 | DO-203AB | 200 °C | -65 °C | ANODE | 1 | METAL | ROUND | POST/STUD MOUNT | TIN OVER NICKEL | SOLDER LUG | UPPER | VISHAY INTERTECHNOLOGY INC | unknown | EAR99 | 8541.10.00.80 | DO-5, 1 PIN | Vishay | |||||||||
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1N1186R
Microsemi Corporation
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$45.7223 | No | No | Transferred | 35 A | 2.5 V | SILICON | RECTIFIER DIODE | SINGLE | NO | 200 V | 1 | POWER | 500 A | 1 | Not Qualified | O-MUPM-D1 | e0 | DO-203AB | 175 °C | -65 °C | ANODE | 1 | METAL | ROUND | POST/STUD MOUNT | TIN LEAD | SOLDER LUG | UPPER | MICROSEMI CORP | unknown | EAR99 | 8541.10.00.80 | DO-5 | METAL, DO-5, 1 PIN | 1 | ||||||||
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JAN1N1186R
Microsemi Corporation
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$51.3742 | No | No | Transferred | 35 A | SILICON | RECTIFIER DIODE | SINGLE | NO | 200 V | 1 | POWER | 500 A | 1 | Not Qualified | O-MUPM-D1 | e0 | MIL-19500/297 | DO-203AB | 175 °C | -65 °C | ANODE | 1 | METAL | ROUND | POST/STUD MOUNT | TIN LEAD | SOLDER LUG | UPPER | MICROSEMI CORP | unknown | EAR99 | 8541.10.00.80 | DO-5 | METAL, DO-5, 1 PIN | 1 | ||||||||
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JANTX1N1186R
Microsemi Corporation
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$56.3963 | No | No | Transferred | 35 A | SILICON | RECTIFIER DIODE | SINGLE | NO | 200 V | 1 | POWER | 500 A | 1 | Not Qualified | O-MUPM-D1 | e0 | MIL-19500/297 | DO-203AB | 175 °C | -65 °C | ANODE | 1 | METAL | ROUND | POST/STUD MOUNT | TIN LEAD | SOLDER LUG | UPPER | MICROSEMI CORP | unknown | EAR99 | 8541.10.00.80 | DO-5 | METAL, DO-5, 1 PIN | 1 | ||||||||
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JANTXV1N1186R
Microsemi Corporation
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$63.0322 | No | No | Transferred | 35 A | SILICON | RECTIFIER DIODE | SINGLE | NO | 200 V | 1 | POWER | 500 A | 1 | Not Qualified | O-MUPM-D1 | e0 | MIL-19500/297 | DO-203AB | 175 °C | -65 °C | ANODE | 1 | METAL | ROUND | POST/STUD MOUNT | TIN LEAD | SOLDER LUG | UPPER | MICROSEMI CORP | unknown | EAR99 | 8541.10.00.80 | DO-5 | METAL, DO-5, 1 PIN | 1 | ||||||||
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1N1186R
Microchip Technology Inc
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$76.7703 | No | Active | 35 A | 2.5 V | SILICON | RECTIFIER DIODE | SINGLE | NO | 200 V | 1 | POWER | 500 A | 1 | Not Qualified | O-MUPM-D1 | e0 | DO-203AB | 175 °C | -65 °C | ANODE | 1 | METAL | ROUND | POST/STUD MOUNT | TIN LEAD | SOLDER LUG | UPPER | MICROCHIP TECHNOLOGY INC | compliant | METAL, DO-5, 1 PIN | |||||||||||||
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JAN1N1186R
Microchip Technology Inc
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$106.9996 | No | Active | 35 A | SILICON | RECTIFIER DIODE | SINGLE | NO | 200 V | 1 | POWER | 500 A | 1 | Qualified | O-MUPM-D1 | e0 | MIL-19500/297 | DO-203AB | 175 °C | -65 °C | ANODE | 1 | METAL | ROUND | POST/STUD MOUNT | TIN LEAD | SOLDER LUG | UPPER | MICROCHIP TECHNOLOGY INC | compliant | METAL, DO-5, 1 PIN |