Parametric results for: 1n4151 under Rectifier Diodes
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1N4151TR
Vishay Intertechnologies
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$0.0040 | Yes | Active | 150 mA | 1 V | 4 ns | 50 nA | 500 mW | SILICON | 75 V | RECTIFIER DIODE | SINGLE | NO | 75 V | 1 | FAST RECOVERY | 2 A | 1 | 50 V | Not Qualified | O-XALF-W2 | e2 | DO-204AH | 175 °C | 260 | 30 | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | Tin/Silver (Sn96.5Ag3.5) | WIRE | AXIAL | VISHAY INTERTECHNOLOGY INC | DO-35, 2 PIN | compliant | EAR99 | 8541.10.00.70 | Vishay | ||||||||
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1N4151
Diotec Semiconductor AG
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$0.0114 | Yes | Active | 200 mA | 1 V | 2 ns | 500 mW | SILICON | RECTIFIER DIODE | SINGLE | NO | 50 V | 1 | 2 A | 1 | Not Qualified | O-LALF-W2 | DO-35 | 1 | 200 °C | -50 °C | 260 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | DIOTEC SEMICONDUCTOR AG | compliant | EAR99 | 8541.10.00.70 | Diotec | DO-35 | 2 | ||||||||||||
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1N4151W-E3-08
Vishay Intertechnologies
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$0.0274 | Yes | Yes | Active | 150 mA | 4 ns | 410 mW | SILICON | RECTIFIER DIODE | SINGLE | YES | 75 V | 1 | 500 mA | 1 | R-PDSO-G2 | e3 | 1 | 150 °C | -55 °C | UNSPECIFIED | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | VISHAY INTERTECHNOLOGY INC | ROHS COMPLIANT PACKAGE-2 | compliant | EAR99 | 8541.10.00.70 | Vishay | 2 | |||||||||||||
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1N4151TAP
Vishay Intertechnologies
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$0.0402 | Yes | Active | 150 mA | 1 V | 4 ns | 50 nA | 500 mW | SILICON | 75 V | RECTIFIER DIODE | SINGLE | NO | 75 V | 1 | FAST RECOVERY | 2 A | 1 | 50 V | Not Qualified | O-XALF-W2 | e2 | DO-204AH | 175 °C | 260 | 30 | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | Tin/Silver (Sn96.5Ag3.5) | WIRE | AXIAL | VISHAY INTERTECHNOLOGY INC | DO-35, 2 PIN | compliant | EAR99 | 8541.10.00.70 | Vishay | ||||||||
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1N4151
Microchip Technology Inc
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$0.9400 | No | Active | 200 mA | 1 V | 4 ns | 50 nA | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | METALLURGICALLY BONDED | 500 mA | 1 | Not Qualified | O-LALF-W2 | e0 | DO-35 | 150 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | compliant | Microchip | ||||||||||||||||
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1N4151HO
ROHM Semiconductor
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Check for Price | Obsolete | 150 mA | 1 V | 2 ns | 50 nA | 500 mW | SILICON | RECTIFIER DIODE | SINGLE | NO | 75 V | 1 | 2 A | 1 | Not Qualified | O-LALF-W2 | DO-35 | 200 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | ROHM CO LTD | O-LALF-W2 | unknown | EAR99 | 8541.10.00.70 | ||||||||||||||||
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1N4151-TR
Telefunken Microelectronics Gmbh
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Check for Price | No | Transferred | 150 mA | 1 V | RECTIFIER DIODE | SINGLE | NO | 75 V | 1 | 2 A | 1 | e0 | 175 °C | Tin/Lead (Sn/Pb) | TELEFUNKEN MICROELECTRONICS GMBH | unknown | EAR99 | ||||||||||||||||||||||||||||||
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1N4151W-G
Sangdest Microelectronics (Nanjing) Co Ltd
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Check for Price | Yes | Obsolete | 150 mA | 2 ns | 500 mW | SILICON | RECTIFIER DIODE | SINGLE | YES | 50 V | 1 | 1 | Not Qualified | R-PDSO-G2 | NOT SPECIFIED | NOT SPECIFIED | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | SANGDEST MICROELECTRONICS (NANJING) CO LTD | R-PDSO-G2 | unknown | ||||||||||||||||||||||
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1N4151T-10
ROHM Semiconductor
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Check for Price | Obsolete | 150 mA | 1 V | 2 ns | 50 nA | 500 mW | SILICON | RECTIFIER DIODE | SINGLE | NO | 75 V | 1 | HIGH RELIABILITY | 2 A | 1 | Not Qualified | O-LALF-W2 | DO-35 | 200 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | ROHM CO LTD | O-LALF-W2 | unknown | EAR99 | 8541.10.00.70 | |||||||||||||||
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1N4151M
Kuwait Semiconductor Co Ltd
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Check for Price | Obsolete | 150 mA | 1 V | 2 ns | RECTIFIER DIODE | SINGLE | NO | 75 V | 1 | 1 | 200 °C | FORWARD INTERNATIONAL ELECTRONICS LTD | unknown | EAR99 |