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1N5059
Diotec Semiconductor AG
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$0.0653 | Yes | Active | 2 A | 1.1 V | SILICON | RECTIFIER DIODE | SINGLE | NO | 200 V | 1 | GENERAL PURPOSE | 55 A | 1 | Not Qualified | O-PALF-W2 | e3 | DO-204AC | 1 | 150 °C | 260 | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | Matte Tin (Sn) - annealed | WIRE | AXIAL | DIOTEC SEMICONDUCTOR AG | DO-15 | ROHS COMPLIANT, PLASTIC, DO-15, 2 PIN | 2 | compliant | EAR99 | 8541.10.00.80 | Diotec | |||||||||||
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1N5059GP-E3/54
Vishay Intertechnologies
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$0.1880 | Yes | Not Recommended | 1 A | 1.2 V | 2 µs | SILICON | RECTIFIER DIODE | SINGLE | NO | 200 V | 1 | HIGH RELIABILITY, LOW LEAKAGE CURRENT | GENERAL PURPOSE | 50 A | 1 | Not Qualified | O-PALF-W2 | e3 | DO-204AC | 175 °C | -65 °C | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | MATTE TIN | WIRE | AXIAL | VISHAY INTERTECHNOLOGY INC | compliant | Vishay | |||||||||||||||
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1N5059TR
Vishay Intertechnologies
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$0.2818 | Yes | Active | 2 A | 1.15 V | 4 µs | 1 µA | SILICON | RECTIFIER DIODE | SINGLE | NO | 200 V | 1 | AVALANCHE | GENERAL PURPOSE | 50 A | 1 | E-LALF-W2 | e4 | 2 | 175 °C | -55 °C | 260 | 30 | ISOLATED | 2 | GLASS | ELLIPTICAL | LONG FORM | Gold (Au) - with Nickel (Ni) barrier | WIRE | AXIAL | VISHAY INTERTECHNOLOGY INC | HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2 | compliant | EAR99 | 8541.10.00.80 | Vishay | ||||||||||
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1N5059TAP
Vishay Intertechnologies
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$0.3258 | Yes | Active | 2 A | 1.15 V | 4 µs | 1 µA | SILICON | RECTIFIER DIODE | SINGLE | NO | 200 V | 1 | AVALANCHE | GENERAL PURPOSE | 50 A | 1 | E-LALF-W2 | e4 | 2 | 175 °C | -55 °C | 260 | 30 | ISOLATED | 2 | GLASS | ELLIPTICAL | LONG FORM | Gold (Au) - with Nickel (Ni) barrier | WIRE | AXIAL | VISHAY INTERTECHNOLOGY INC | E-LALF-W2 | compliant | EAR99 | 8541.10.00.80 | Vishay | ||||||||||
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933076440113
NXP Semiconductors
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Check for Price | Obsolete | 800 mA | 1 V | 3 µs | 1 µA | SILICON | 225 V | RECTIFIER DIODE | SINGLE | NO | 200 V | 1 | AVALANCHE | LOW LEAKAGE CURRENT | GENERAL PURPOSE | 50 A | 1 | 200 V | Not Qualified | E-LALF-W2 | IEC 134 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ELLIPTICAL | LONG FORM | WIRE | AXIAL | NXP SEMICONDUCTORS | O-LALF-W2 | unknown | EAR99 | 8541.10.00.80 | ||||||||||||
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1N5059AMO
NXP Semiconductors
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Check for Price | Obsolete | 800 mA | 3 µs | SILICON | RECTIFIER DIODE | SINGLE | NO | 200 V | 1 | AVALANCHE | GENERAL PURPOSE | 1 | Not Qualified | E-LALF-W2 | IEC-134 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ELLIPTICAL | LONG FORM | WIRE | AXIAL | NXP SEMICONDUCTORS | E-LALF-W2 | 2 | unknown | EAR99 | 8541.10.00.80 | |||||||||||||||||
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1N5062
New Jersey Semiconductor Products Inc
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Check for Price | Active | 2 A | 1.15 V | 4 µs | 1 µA | SILICON | RECTIFIER DIODE | SINGLE | 800 V | 1 | GENERAL PURPOSE | 50 A | 1 | 175 °C | -55 °C | NEW JERSEY SEMICONDUCTOR PRODUCTS INC | unknown | ||||||||||||||||||||||||||||||
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1N5059BK
Central Semiconductor Corp
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Check for Price | Obsolete | 1 A | 1.2 V | SILICON | RECTIFIER DIODE | SINGLE | NO | 200 V | 1 | GENERAL PURPOSE | 50 A | 1 | Not Qualified | E-PALF-W2 | e0 | 175 °C | ISOLATED | 2 | PLASTIC/EPOXY | ELLIPTICAL | LONG FORM | TIN LEAD | WIRE | AXIAL | CENTRAL SEMICONDUCTOR CORP | E-PALF-W2 | compliant | EAR99 | 8541.10.00.80 | ||||||||||||||||||
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CPD05-1N5059-WS
Central Semiconductor Corp
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Check for Price | Active | CENTRAL SEMICONDUCTOR CORP | compliant | EAR99 | |||||||||||||||||||||||||||||||||||||||||||
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1N5059T/R
NXP Semiconductors
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Check for Price | Obsolete | 800 mA | 3 µs | SILICON | RECTIFIER DIODE | SINGLE | NO | 200 V | 1 | AVALANCHE | GENERAL PURPOSE | 1 | Not Qualified | E-LALF-W2 | CECC50008-015 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ELLIPTICAL | LONG FORM | WIRE | AXIAL | NXP SEMICONDUCTORS | E-LALF-W2 | 2 | unknown | EAR99 | 8541.10.00.80 |