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1N5285
Microchip Technology Inc
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$19.0533 | No | Active | 1 V | 270 µA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | METALLURGICALLY BONDED | 1.95 MΩ | Not Qualified | O-XALF-W2 | e0 | DO-35 | 175 °C | -55 °C | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-35, 2 PIN | compliant | |||||
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1N5285-1
Microchip Technology Inc
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$22.3114 | No | Active | 1 V | 270 µA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | METALLURGICALLY BONDED | 14 MΩ | Not Qualified | O-XALF-W2 | e0 | DO-35 | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-35, 2 PIN | compliant | |||||||
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1N5285UR-1
Microchip Technology Inc
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$22.4877 | No | Active | 1 V | 270 µA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 100 V | 1 | FIELD EFFECT | METALLURGICALLY BONDED | 14 MΩ | Not Qualified | O-LELF-R2 | e0 | DO-213AB | 1 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, LL41, MELF-2 | compliant | ||||
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JANTX1N5285-1
Microchip Technology Inc
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$34.3029 | No | Active | 1 V | 270 µA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | 14 MΩ | Qualified | O-LALF-W2 | e0 | MIL-PRF-19500 | DO-7 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-35, 2 PIN | compliant | |||||
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JAN1N5285-1
Microchip Technology Inc
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$36.0848 | No | Active | 1 V | 270 µA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | 14 MΩ | Qualified | O-LALF-W2 | e0 | MIL-PRF-19500 | DO-7 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-35, 2 PIN | compliant | |||||
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JANTXV1N5285-1
Microchip Technology Inc
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$37.5039 | No | Active | 1 V | 270 µA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | 14 MΩ | Qualified | O-LALF-W2 | e0 | MIL-PRF-19500 | DO-7 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-35, 2 PIN | compliant | |||||
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JAN1N5285UR-1
Microchip Technology Inc
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$37.8002 | No | Active | 1 V | 270 µA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 100 V | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Qualified | O-LELF-R2 | e0 | MIL-19500 | DO-213AB | 1 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, LL41, MELF-2 | compliant | ||||
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JANTX1N5285UR-1
Microchip Technology Inc
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$39.4207 | No | Active | 1 V | 270 µA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 100 V | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Qualified | O-LELF-R2 | e0 | MIL-19500 | DO-213AB | 1 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, LL41, MELF-2 | compliant | ||||
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JANTXV1N5285UR-1
Microchip Technology Inc
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$41.4618 | No | Active | 1 V | 270 µA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 100 V | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Qualified | O-LELF-R2 | e0 | MIL-19500 | DO-213AB | 1 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, LL41, MELF-2 | compliant | ||||
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JANS1N5285-1
Microchip Technology Inc
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$102.8722 | No | Active | 1 V | 270 µA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | 14 MΩ | Qualified | O-LALF-W2 | e0 | MIL-PRF-19500 | DO-7 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-35, 2 PIN | compliant |