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1N5311-1
Microchip Technology Inc
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$19.1604 | No | Active | 2.5 V | 3.6 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Not Qualified | O-XALF-W2 | e0 | DO-35 | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-35, 2 PIN | compliant | ||||||||
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1N5311
Microchip Technology Inc
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$19.3497 | No | Active | 2.5 V | 3.6 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | METALLURGICALLY BONDED | 20 kΩ | Not Qualified | O-XALF-W2 | e0 | DO-35 | 175 °C | -55 °C | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-35, 2 PIN | compliant | |||||
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1N5311UR-1
Microchip Technology Inc
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$22.7020 | No | Active | 2.5 V | 3.6 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 100 V | 1 | FIELD EFFECT | METALLURGICALLY BONDED | 265 kΩ | Not Qualified | O-LELF-R2 | e0 | DO-213AB | 1 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, LL41, MELF-2 | compliant | ||||
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JAN1N5311-1
Microchip Technology Inc
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$29.7666 | No | Active | 2.5 V | 3.6 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | 265 kΩ | Qualified | O-LALF-W2 | e0 | MIL-PRF-19500 | DO-7 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-35, 2 PIN | compliant | |||||
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JAN1N5311UR-1
Microchip Technology Inc
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$31.2270 | No | Active | 2.5 V | 3.6 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 100 V | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Qualified | O-LELF-R2 | e0 | MIL-19500 | DO-213AB | 1 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, LL41, MELF-2 | compliant | ||||
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JANTX1N5311-1
Microchip Technology Inc
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$35.3528 | No | Active | 2.5 V | 3.6 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | 265 kΩ | Qualified | O-LALF-W2 | e0 | MIL-PRF-19500 | DO-7 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-35, 2 PIN | compliant | |||||
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JANTX1N5311UR-1
Microchip Technology Inc
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$37.0846 | No | Active | 2.5 V | 3.6 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 100 V | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Qualified | O-LELF-R2 | e0 | MIL-19500 | DO-213AB | 1 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, LL41, MELF-2 | compliant | ||||
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JANTXV1N5311-1
Microchip Technology Inc
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$37.5039 | No | Active | 2.5 V | 3.6 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | 265 kΩ | Qualified | O-LALF-W2 | e0 | MIL-PRF-19500 | DO-7 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-35, 2 PIN | compliant | |||||
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JANTXV1N5311UR-1
Microchip Technology Inc
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$42.0303 | No | Active | 2.5 V | 3.6 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 100 V | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Qualified | O-LELF-R2 | e0 | MIL-19500 | DO-213AB | 1 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, LL41, MELF-2 | compliant | ||||
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JANS1N5311-1
Microchip Technology Inc
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$102.8722 | No | Active | 2.5 V | 3.6 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | 265 kΩ | Qualified | O-LALF-W2 | e0 | MIL-PRF-19500 | DO-7 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-35, 2 PIN | compliant |