Parametric results for: 1n5312-1 under Current Regulator Diodes
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1N5312-1
Microchip Technology Inc
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$19.1604 | No | Active | 2.6 V | 3.9 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Not Qualified | O-XALF-W2 | e0 | DO-35 | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-35, 2 PIN | compliant | Microchip | |||||||||||
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JAN1N5312-1
Microchip Technology Inc
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$29.7666 | No | Active | 2.6 V | 3.9 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | 255 kΩ | Qualified | O-LALF-W2 | e0 | MIL-PRF-19500 | DO-7 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-35, 2 PIN | compliant | Microchip | ||||||||
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JANTX1N5312-1
Microchip Technology Inc
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$35.0186 | No | Active | 2.6 V | 3.9 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | 255 kΩ | Qualified | O-LALF-W2 | e0 | MIL-PRF-19500 | DO-7 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-35, 2 PIN | compliant | |||||||||
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JANTXV1N5312-1
Microchip Technology Inc
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$37.5039 | No | Active | 2.6 V | 3.9 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | 255 kΩ | Qualified | O-LALF-W2 | e0 | MIL-PRF-19500 | DO-7 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-35, 2 PIN | compliant | |||||||||
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JANS1N5312-1
Microchip Technology Inc
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$102.8722 | No | Active | 2.6 V | 3.9 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | 255 kΩ | Qualified | O-LALF-W2 | e0 | MIL-PRF-19500 | DO-7 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-35, 2 PIN | compliant | |||||||||
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JANS1N5312-1/TR
Microchip Technology Inc
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$103.0213 | No | Active | 2.6 V | 3.9 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | 255 kΩ | O-LALF-W2 | e0 | MIL-PRF-19500 | DO-7 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | compliant | |||||||||||
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1N5312-1
Compensated Devices Inc
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Check for Price | Transferred | 2.6 V | 3.9 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Not Qualified | O-LALF-W2 | e0 | DO-7 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | COMPENSATED DEVICES INC | HERMETIC SEALED, GLASS, DO-7, 2 PIN | unknown | ||||||||||||||
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JANTX1N5312-1E3
Microsemi Corporation
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Check for Price | Active | MICROSEMI CORP-LAWRENCE | unknown | |||||||||||||||||||||||||||||||||||||
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JAN1N5312-1
Micrometrics Inc
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Check for Price | Obsolete | 2.6 V | 3.9 mA | 600 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | 255 kΩ | ISOLATED | MICROMETRICS INC | unknown | EAR99 | |||||||||||||||||||||||||
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JANTXV1N5312-1
Cobham Semiconductor Solutions
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Check for Price | No | No | Obsolete | 2.6 V | 3.9 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | Not Qualified | O-LALF-W2 | e0 | MIL-19500/463 | DO-7 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | AEROFLEX/MICROMETRICS | GLASS PACKAGE-2 | unknown | EAR99 | DO-7 | 2 | 8541.10.00.70 |