Parametric results for: 1n5417us under Rectifier Diodes
Filter Your Search
1 - 10 of 23 results
|
Select parts from the table below to compare.
Compare
Compare
|
|
JAN1N5417US
Microchip Technology Inc
|
$9.3400 | No | Active | 3 A | 150 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 1 | FAST RECOVERY POWER | 80 A | 1 | Qualified | O-LELF-R2 | MIL-19500/411L | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | compliant | |||||||||||||||
|
|
1N5417US
Microchip Technology Inc
|
$9.6978 | No | Active | 3 A | 1.5 V | 150 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 200 V | 1 | HIGH RELIABILITY, METALLURGICALLY BONDED | FAST RECOVERY | 80 A | 1 | Not Qualified | O-LELF-R2 | e0 | 175 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | compliant | ||||||||||
|
|
1N5417US
Microsemi Corporation
|
$10.5806 | No | No | Transferred | 3 A | 1.5 V | 150 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 200 V | 1 | HIGH RELIABILITY, METALLURGICALLY BONDED | FAST RECOVERY | 80 A | 1 | Not Qualified | O-LELF-R2 | e0 | 175 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROSEMI CORP | unknown | HERMETIC SEALED, GLASS, D-5B, 2 PIN | 2 | EAR99 | 8541.10.00.80 | Microsemi Corporation | ||||
|
|
JANTX1N5417US
Microchip Technology Inc
|
$10.8712 | No | Active | 3 A | 150 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 1 | FAST RECOVERY POWER | 80 A | 1 | Qualified | O-LELF-R2 | e0 | MIL-19500/411L | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | compliant | GLASS PACKAGE-2 | Microchip | |||||||||||
|
|
JAN1N5417US
Microsemi Corporation
|
$13.2396 | No | Transferred | 3 A | 150 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 1 | FAST RECOVERY POWER | 80 A | 1 | Not Qualified | O-LELF-R2 | MIL-19500/411L | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROSEMI CORP | unknown | GLASS PACKAGE-2 | 2 | EAR99 | 8541.10.00.80 | |||||||||||
|
|
JANTXV1N5417US
Microchip Technology Inc
|
$16.0306 | No | Active | 3 A | 150 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 1 | FAST RECOVERY POWER | 80 A | 1 | Qualified | O-LELF-R2 | e0 | MIL-19500/411L | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | compliant | GLASS PACKAGE-2 | ||||||||||||
|
|
JANTXV1N5417US/TR
Microchip Technology Inc
|
$16.2011 | Active | 3 A | 150 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 1 | FAST RECOVERY POWER | 80 A | 1 | Qualified | O-LELF-R2 | e0 | MIL-19500/411L | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | unknown | EAR99 | 8541.10.00.80 | ||||||||||||
|
JANTX1N5417US
Microsemi Corporation
|
$16.6243 | No | Transferred | 3 A | 150 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 1 | FAST RECOVERY POWER | 80 A | 1 | Not Qualified | O-LELF-R2 | e0 | MIL-19500/411L | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROSEMI CORP | unknown | GLASS PACKAGE-2 | 2 | EAR99 | 8541.10.00.80 | Microsemi Corporation | MELF | |||||||
|
|
JANTXV1N5417US
Microsemi Corporation
|
$25.0446 | No | Transferred | 3 A | 150 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 1 | FAST RECOVERY POWER | 80 A | 1 | Not Qualified | O-LELF-R2 | e0 | MIL-19500/411L | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROSEMI CORP | unknown | GLASS PACKAGE-2 | 2 | EAR99 | 8541.10.00.80 | |||||||||
|
|
JANS1N5417US
Microchip Technology Inc
|
$71.0972 | No | Active | 3 A | 150 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 1 | FAST RECOVERY POWER | 80 A | 1 | Qualified | O-LELF-R2 | e0 | MIL-19500/411L | ISOLATED | 2 | GLASS | ROUND | LONG FORM | Tin/Lead (Sn/Pb) | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | compliant |