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1N5530A
Microchip Technology Inc
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$1.8350 | No | Active | 1 mA | 500 mW | 10 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | 10 % | Not Qualified | O-LALF-W2 | e0 | DO-35 | 1 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETICALLY SEALED, GLASS PACKAGE-2 | compliant | |||||||||
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1N5530
Microchip Technology Inc
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$1.8350 | No | Active | 1 mA | 500 mW | 10 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | LOW LEAKAGE CURRENT, LOW VOLTAGE AVALANCHE, LOW ZENER IMPEDANCE, LOW ZENER NOISE | 60 Ω | 20 % | Not Qualified | O-LALF-W2 | e0 | DO-35 | 1 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETICALLY SEALED, GLASS PACKAGE-2 | compliant | |||||||
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1N5530B
Microsemi Corporation
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$1.9619 | No | Transferred | 1 mA | 50 nA | 500 mW | 10 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED | 5 % | Not Qualified | O-XALF-W2 | e0 | MIL-19500/437E | DO-35 | 1 | 200 °C | -65 °C | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | DO-7, 2 PIN | not_compliant | ||||||
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1N5530B
Microchip Technology Inc
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$3.5415 | No | Active | 1 mA | 50 nA | 500 mW | 10 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED | 5 % | Not Qualified | O-XALF-W2 | e0 | MIL-19500/437E | DO-35 | 1 | 200 °C | -65 °C | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-7, 2 PIN | compliant | ||||||
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JAN1N5530B-1
Microchip Technology Inc
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$5.6862 | No | Active | 1 mA | 500 mW | 10 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED | 5 % | Qualified | O-LALF-W2 | e0 | MIL-19500 | DO-204AH | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, DO-35, 2 PIN | compliant | ||||||||
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JAN1N5530B-1/TR
Microchip Technology Inc
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$5.8626 | No | Active | 1 mA | 50 nA | 500 mW | 10 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | METALLURGICAL BONDED | 60 Ω | 9.1 V | 5 % | O-LALF-W2 | e0 | MIL-PRF-19500; MIL-STD-750 | DO-204AH | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | Tin/Lead (Sn/Pb) | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-35, 2 PIN | unknown | ||||||
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JANTX1N5530B-1
Microchip Technology Inc
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$6.2790 | No | Active | 1 mA | 500 mW | 10 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED | 5 % | Qualified | O-LALF-W2 | e0 | MIL-19500 | DO-204AH | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, DO-35, 2 PIN | compliant | ||||||||
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1N5530BUR-1
Microchip Technology Inc
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$6.4332 | No | Active | 1 mA | 500 mW | 10 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | YES | 1 | AVALANCHE | METALLURGICALLY BONDED | 5 % | Not Qualified | O-LELF-R2 | e0 | DO-213AA | 1 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, MLL34, MELF-2 | compliant | ||||||||||
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1N5530BUR-1
Microsemi Corporation
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$6.6628 | No | Transferred | 1 mA | 500 mW | 10 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | YES | 1 | AVALANCHE | METALLURGICALLY BONDED | 5 % | Not Qualified | O-LELF-R2 | e0 | DO-213AA | 1 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROSEMI CORP | HERMETIC SEALED, GLASS, MLL34, MELF-2 | unknown | ||||||||||
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1N5530BUR-1/TR
Microchip Technology Inc
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$6.7082 | No | Active | 1 mA | 500 mW | 10 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | YES | 1 | AVALANCHE | TR, 7 INCH; 2000 | 5 % | Not Qualified | O-LELF-R2 | e0 | DO-213AA | 1 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, MLL34, MELF-2 | compliant | EAR99 | 8541.10.00.50 |