Parametric results for: 1n5621 under Rectifier Diodes
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1N5621
Microchip Technology Inc
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$4.5682 | No | Active | 1 A | 300 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 800 V | 1 | HIGH RELIABILITY, METALLURGICALLY BONDED | GENERAL PURPOSE | 1 | Not Qualified | O-LALF-W2 | e0 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, A, 2 PIN | compliant | |||||||||||||||
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JAN1N5621
Microchip Technology Inc
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$5.6010 | No | Active | 1 A | 300 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | GENERAL PURPOSE | 1 | Qualified | O-LALF-W2 | e0 | MIL-19500/429J | DO-7 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | Tin/Lead (Sn/Pb) | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, SIMILAR TO DO-7, 2 PIN | compliant | |||||||||||||
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JANTX1N5621
Microchip Technology Inc
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$6.4528 | No | Active | 1 A | 300 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | GENERAL PURPOSE | 1 | Not Qualified | O-LALF-W2 | e0 | MIL-19500/429J | DO-7 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | Tin/Lead (Sn/Pb) | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, SIMILAR TO DO-7, 2 PIN | compliant | DO-7 | 2 | EAR99 | 8541.10.00.80 | |||||||||||
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1N5621US
Microchip Technology Inc
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$8.3716 | No | Active | 1 A | 300 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 1 | HIGH RELIABILITY | GENERAL PURPOSE | 1 | Not Qualified | O-LELF-R2 | e0 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, D-5A, 2 PIN | compliant | ||||||||||||||||
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JAN1N5621US
Microchip Technology Inc
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$8.4882 | No | Active | 1 A | 300 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 1 | GENERAL PURPOSE | 1 | Qualified | O-LELF-R2 | MIL-19500/429J | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS PACKAGE-2 | compliant | ||||||||||||||||||
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JANTX1N5621US
Microchip Technology Inc
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$10.2242 | No | Active | 1 A | 300 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 1 | GENERAL PURPOSE | 1 | Qualified | O-LELF-R2 | MIL-19500/429J | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS PACKAGE-2 | compliant | ||||||||||||||||||
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JANTXV1N5621
Microchip Technology Inc
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$10.8530 | No | Active | 1 A | 300 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | GENERAL PURPOSE | 1 | Qualified | O-LALF-W2 | MIL-19500/429J | DO-7 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, SIMILAR TO DO-7, 2 PIN | compliant | |||||||||||||||||
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JANTXV1N5621US
Microchip Technology Inc
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$15.4213 | No | Active | 1 A | 300 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 800 V | 1 | AVALANCHE | HIGH RELIABILITY | GENERAL PURPOSE | 1 | Qualified | O-LELF-R2 | MIL-19500 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS PACKAGE-2 | compliant | |||||||||||||
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JANTXV1N5621US/TR
Microchip Technology Inc
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$15.5664 | Active | 1 A | 300 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 800 V | 1 | AVALANCHE | HIGH RELIABILITY | GENERAL PURPOSE | 1 | Qualified | O-LELF-R2 | MIL-19500 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | unknown | EAR99 | 8541.10.00.80 | |||||||||||||
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1N5621
Semtech Corporation
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$17.6329 | No | Transferred | 1 A | 1.2 V | 300 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 800 V | 1 | 50 A | 1 | Not Qualified | E-XALF-W2 | DO-7 | 175 °C | -65 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | UNSPECIFIED | ELLIPTICAL | LONG FORM | WIRE | AXIAL | SEMTECH CORP | HERMETIC SEALED PACKAGE-2 | unknown | DO-7 | 2 | EAR99 | 8541.10.00.80 |