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1N5806USE3
Microchip Technology Inc
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$6.6632 | Yes | Active | 1 A | 875 mV | 25 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 150 V | 1 | AVALANCHE | HIGH RELIABLITY | ULTRA FAST RECOVERY | 35 A | 1 | O-LELF-R2 | e3 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | MATTE TIN | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, D-5A, 2 PIN | compliant | Microchip | |||||
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1N5806USE3/TR
Microchip Technology Inc
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$6.7896 | Active | 1 A | 875 mV | 25 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 150 V | 1 | AVALANCHE | HIGH RELIABLITY | ULTRA FAST RECOVERY | 35 A | 1 | O-LELF-R2 | e3 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | MATTE TIN | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | unknown | Microchip | EAR99 | 8541.10.00.80 | |||||
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1N5806USE3
Microsemi Corporation
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Check for Price | Yes | Yes | Transferred | 1 A | 875 mV | 25 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 150 V | 1 | AVALANCHE | HIGH RELIABLITY | ULTRA FAST RECOVERY | 35 A | 1 | O-LELF-R2 | e3 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | MATTE TIN | WRAP AROUND | END | MICROSEMI CORP | HERMETIC SEALED, GLASS, D-5A, 2 PIN | compliant | Microsemi Corporation | EAR99 | 8541.10.00.80 |