Parametric results for: 1n6640 under Rectifier Diodes
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JAN1N6640
Microchip Technology Inc
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$6.9888 | No | Active | 300 mA | 4 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | METALLURGICALLY BONDED | 1 | Qualified | O-XALF-W2 | e0 | MIL-19500/609D | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | SIMILAR TO DO-35, 2 PIN | compliant | ||||||||||||||||||||
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JAN1N6640US
Microchip Technology Inc
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$7.6381 | No | Active | 300 mA | 4 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 1 | METALLURGICALLY BONDED | 1 | Qualified | O-XELF-R2 | e0 | MIL-19500/609D | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | SURFACE MOUNT PACKAGE-2 | compliant | ||||||||||||||||||||
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1N6640
Microsemi Corporation
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$7.7118 | No | No | Transferred | 300 mA | 1 V | 4 ns | 100 nA | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | 2.5 A | 1 | Not Qualified | O-LALF-W2 | e0 | DO-35 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | HERMETIC SEALED PACKAGE-2 | unknown | 2 | EAR99 | 8541.10.00.70 | Microsemi Corporation | |||||||||||
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JANTX1N6640
Microsemi Corporation
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$7.7196 | No | No | Transferred | 300 mA | 1 V | 4 ns | 100 nA | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | METALLURGICALLY BONDED | 2.5 A | 1 | Not Qualified | O-XALF-W2 | e0 | MIL-19500/609D | DO-35 | 175 °C | -65 °C | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | SIMILAR TO DO-35, 2 PIN | unknown | 2 | EAR99 | 8541.10.00.70 | Microsemi Corporation | DO-35 | ||||||||
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1N6640
Microchip Technology Inc
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$7.7294 | No | Active | 300 mA | 1 V | 4 ns | 100 nA | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | 2.5 A | 1 | Not Qualified | O-LALF-W2 | e0 | DO-35 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED PACKAGE-2 | compliant | ||||||||||||||||
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1N6640US
Microsemi Corporation
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$8.4016 | No | No | Transferred | 300 mA | 1 V | 4 ns | 100 nA | SILICON | RECTIFIER DIODE | SINGLE | YES | 1 | 2.5 A | 1 | Not Qualified | O-LELF-R2 | e0 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROSEMI CORP | HERMETIC SEALED, GLASS, D-5D, 2 PIN | unknown | 2 | EAR99 | 8541.10.00.70 | Microsemi Corporation | ||||||||||||
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JANTX1N6640US
Microchip Technology Inc
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$8.7543 | No | Active | 300 mA | 1 V | 4 ns | 100 nA | SILICON | RECTIFIER DIODE | SINGLE | YES | 1 | METALLURGICALLY BONDED | 2.5 A | 1 | Qualified | O-XELF-R2 | e0 | MIL-19500/609D | 175 °C | -65 °C | 235 | 20 | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | Tin/Lead (Sn/Pb) | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | SURFACE MOUNT PACKAGE-2 | compliant | Microchip | ||||||||||||
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JANTX1N6640US/TR
Microchip Technology Inc
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$8.8243 | Active | 300 mA | 1 V | 4 ns | 100 nA | SILICON | 75 V | RECTIFIER DIODE | SINGLE | YES | 50 V | 1 | GENERAL PURPOSE | 2.5 A | 1 | 50 V | O-LELF-R2 | MIL-PRF-19500 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | compliant | EAR99 | 8541.21.00.40 | |||||||||||||||
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JAN1N6640
Microsemi Corporation
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$8.8523 | No | No | Transferred | 300 mA | 4 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | METALLURGICALLY BONDED | 1 | Not Qualified | O-XALF-W2 | e0 | MIL-19500/609D | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | SIMILAR TO DO-35, 2 PIN | unknown | 2 | EAR99 | 8541.10.00.70 | Microsemi Corporation | DO-35 | ||||||||||||||
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JANTX1N6640
MACOM
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$8.9896 | Transferred | 300 mA | 4 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 50 V | 1 | METALLURGICALLY BONDED | Qualified | O-LALF-W2 | e0 | MIL-19500/578 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | M/A-COM TECHNOLOGY SOLUTIONS INC | HERMETIC SEALED GLASS PACKAGE-2 | compliant | EAR99 | 8541.10.00.70 |