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1N6641US
Microchip Technology Inc
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$10.0005 | No | Active | 300 mA | 1.1 V | 5 ns | 100 nA | SILICON | RECTIFIER DIODE | SINGLE | YES | 1 | 2.5 A | 1 | Not Qualified | O-LELF-R2 | e0 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, D-5D, 2 PIN | compliant | ||||||||||||
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JAN1N6641US
Microchip Technology Inc
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$10.1998 | No | Active | 300 mA | 5 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 1 | METALLURGICALLY BONDED | GENERAL PURPOSE | 1 | Qualified | O-XELF-R2 | e0 | MIL-19500/609D | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | SURFACE MOUNT PACKAGE-2 | compliant | ||||||||||||||
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JANTX1N6641US
Microchip Technology Inc
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$11.5152 | No | Active | 300 mA | 1.1 V | 5 ns | 100 nA | SILICON | RECTIFIER DIODE | SINGLE | YES | 1 | METALLURGICALLY BONDED | GENERAL PURPOSE | 2.5 A | 1 | Qualified | O-XELF-R2 | e0 | MIL-19500/609D | 175 °C | -65 °C | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | SURFACE MOUNT PACKAGE-2 | compliant | |||||||||
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JANTX1N6641US/TR
Microchip Technology Inc
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$11.6723 | Active | 300 mA | 1.1 V | 5 ns | 100 nA | SILICON | RECTIFIER DIODE | SINGLE | YES | 1 | METALLURGICALLY BONDED | GENERAL PURPOSE | 2.5 A | 1 | Qualified | O-XELF-R2 | e0 | MIL-19500/609D | 175 °C | -65 °C | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | unknown | EAR99 | 8541.10.00.70 | |||||||||
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JANTXV1N6641US
Microchip Technology Inc
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$14.3127 | No | Active | 300 mA | 1.1 V | 5 ns | 100 nA | SILICON | RECTIFIER DIODE | SINGLE | YES | 50 V | 1 | METALLURGICALLY BONDED | GENERAL PURPOSE | 2.5 A | 1 | Qualified | O-XELF-R2 | e0 | MIL-19500/609D | 175 °C | -65 °C | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | SURFACE MOUNT PACKAGE-2 | compliant | ||||||||
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JANS1N6641US
Microchip Technology Inc
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$86.5212 | No | Active | 300 mA | 1.1 V | 5 ns | 100 nA | SILICON | RECTIFIER DIODE | SINGLE | YES | 1 | METALLURGICALLY BONDED | GENERAL PURPOSE | 2.5 A | 1 | Qualified | O-XELF-R2 | e0 | MIL-19500/609D | 175 °C | -65 °C | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | SURFACE MOUNT PACKAGE-2 | compliant | |||||||||
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1N6641US
Cobham Semiconductor Solutions
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Check for Price | Transferred | 300 mA | 5 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 50 V | 1 | Not Qualified | O-LELF-R2 | e0 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | AEROFLEX/METELICS INC | HERMETIC SEALED GLASS PACKAGE-2 | unknown | EAR99 | 8541.10.00.70 | 2 | |||||||||||||||
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JANTX1N6641US
VPT Components
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Check for Price | No | Active | 200 mA | 1.1 V | 5 ns | 100 nA | SILICON | RECTIFIER DIODE | SINGLE | YES | 50 V | 1 | ULTRA FAST RECOVERY | 1 | 50 V | Qualified | O-LELF-R2 | MIL-19500 | 175 °C | -65 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | VPT COMPONENTS | MELF-2 | compliant | EAR99 | 8541.10.00.70 | |||||||
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JANTX1N6641US
MACOM
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Check for Price | Transferred | 300 mA | 5 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 50 V | 1 | METALLURGICALLY BONDED | Qualified | O-LELF-R2 | e0 | MIL-19500/578 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | M/A-COM TECHNOLOGY SOLUTIONS INC | HERMETIC SEALED GLASS PACKAGE-2 | compliant | EAR99 | 8541.10.00.70 | ||||||||||||||
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1N6641US
Sensitron Semiconductors
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Check for Price | Active | 300 mA | 5 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 75 V | 1 | HIGH RELIABILITY | 1 | O-LELF-R2 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | SENSITRON SEMICONDUCTOR | MELF-2 | compliant | EAR99 | 8541.10.00.70 |