Parametric results for: 24-LC under EEPROMs

All Filters Access Time-Max Additional Feature Clock Frequency-Max (fCLK) Command User Interface Data Polling Data Retention Time-Min Endurance I/O Type I2C Control Byte JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Page Size Power Supplies Supply Voltage-Nom (Vsup) Access Time-Max (1)

900 ns 3

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1 MILLION ERASE/WRITE CYCLES 23 1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION; 2 WIRE I2C INTERFACE 3 1,000,000 ERASE/WRITE CYCLES; DATA RETENTION > 200 YEARS 7 1000000 ERASE/WRITE CYCLES GUARANTEED 24 1000000 ERASE/WRITE CYCLES, HARDWARE WRITE PROTECT, DATA RETENTION > 200 YEARS 74 1000K ERASE/WRITE CYCLE; 200 YEAR DATA RETENTION 10 1000K ERASE/WRITE CYCLES; CAN BE ORGANIZED AS 8 BLOCKS OF 256 BYTES; DATA RETENTION >200 YEARS 43 1000K ERASE/WRITE CYCLES; DATA RETENTION > 200 YEARS 9 1000K ERASE/WRITE CYCLES; HARDWARE WRITE PROTECT; DATA RETENTION > 200 YEARS 23 100K ERASE/WRITE CYCLES MIN; CAN BE ORGANIZED AS 2 BLOCKS OF 256 BYTES; DATA RETENTION > 40 YEARS 16 100K ERASE/WRITE CYCLES MIN; CAN BE ORGANIZED AS 4 BLOCKS OF 256 BYTES; DATA RETENTION > 40 YEARS 18 2 WIRE INTERFACE; PAGE WRITE 60 2-WIRE SERIAL INTERFACE 10 2-WIRE SERIAL INTERFACE; 1000000 ERASE/WRITE CYCLES GUARANTEED 4 2-WIRE SERIAL INTERFACE; DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED 1 2-WIRE SERIAL INTERFACE; DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED 174 2.5V TO 5.5V @ 0.1MHz 22 200 YEARS DATA RETENTION 3 40 YEAR DATA RETENTION 6 40 YEARS DATA RETENTION 45 ALSO AVAILABLE 2.5V TO 5.5V 1 ALSO CONTAINS 128 X 8 BIT MEMORY BLOCK 9 ALSO HAVING DIP-8 PIN PACKAGE 5 ALSO OPERATES AT 1.7V TO 2.5V @ 0.1MHZ 2 DATA RETENTION > 200 YEARS; 1,000,000 ERASE/WRITE CYCLES 2 DATA RETENTION > 200 YEARS; 1,000,000 ERASE/WRITE CYCLES 23 DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED 78 HARDWARE WRITE PROTECT; 1000K WRITE/ERASE CYCLES 4 HARDWARE WRITE PROTECT; DATA RETENTION > 40 YEARS 3 IT ALSO OPERATES AT 0.4MHZ AT 2.5MIN SUPPLY 2 Terminal pitch-0.26 1

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Clock Frequency-Max (fCLK) (4)

100 kHz 371 400 kHz 1,640 1 MHz 47 2 MHz 7

Min (MHz) - Max (MHz)

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NO 2

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YES 18

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10 15 40 148 100 189 200 1,526

Min - Max

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100000.0 Write/Erase Cycles 172 1000000.0 Write/Erase Cycles 1,389 1.0E7 Write/Erase Cycles 17

Min (Write/EraseCycles) - Max (Write/EraseCycles)

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COMMON 5

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0110TCCC 16 1010000R 40 10100DDR 1 1010DDDR 715 1010DDMR 79 1010DMMR 36 1010MDDR 18 1010MMMR 160 1010XMMR 115 1010XXMR 91 1010XXMR/1010000R 2 1010XXMR/1010XXXR 6 1010XXXR 293 1011XMMR 3 1DDDMMMR 15

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R-GDIP-T8 4 R-PBGA-B4 4 R-PBGA-B5 11 R-PBGA-B8 5 R-PDIP-T8 353 R-PDSO-G14 129 R-PDSO-G5 133 R-PDSO-G6 10 R-PDSO-G8 1,164 R-PDSO-N8 255 R-XUUC-N 10 R-XUUC-N4 5 S-PDSO-G8 178 X-XUUC-N 7

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e0 290 e3 1,594 e4 91

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2 mm 18 2.85 mm 2 2.9 mm 69 2.95 mm 55 3 mm 404 4.4 mm 289 4.85 mm 6 4.9 mm 563 4.9022 mm 5 5 mm 28 5.05 mm 28 5.245 mm 44 5.26 mm 62 5.28 mm 67 6 mm 31 8.65 mm 37 9.2 mm 17 9.27 mm 103 9.271 mm 110 9.28 mm 2 9.3 mm 4 9.4 mm 6 9.46 mm 83 9.55 mm 3 9.9695 mm 4 10.03 mm 6

Min (mm) - Max (mm)

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Manufacturer (13)

Anachip Corporation 60 Catalyst Semiconductor 140 Ceramate Technical Co Ltd 12 Diodes Incorporated 60 Eorex Corporation 1 Holtek Semiconductor Inc 39 Integral Research And Production Corp 4 Kodenshi Corporation 8 Kuwait Semiconductor Co Ltd 18 Microchip Technology Inc 2,000 Rochester Electronics LLC 1 STMicroelectronics 9 Xicor Inc 16

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Memory Density (12)

128 bit 94 1.024 kbit 346 2.048 kbit 461 4.096 kbit 235 8.192 kbit 198 16.384 kbit 243 32.768 kbit 206 65.536 kbit 193 131.072 kbit 111 262.144 kbit 94 524.288 kbit 53 1.0486 Mbit 30

Min (bit) - Max (bit)

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EEPROM 2,279 EEPROM CARD 1 EPROM 3

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Memory Width (2)

1 14 8 2,256

Min - Max

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1 1,278 3 9

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1.0 2,105 2.0 3 8.0 4

Min - Max

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1 637 2 8

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14 129 4 9 5 164 6 10 8 1,938

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16 words 93 128 words 353 256 words 457 512 words 233 1.024 k 198 2.048 k 248 4.096 k 206 8.192 k 193 16.384 k 112 32.768 k 94 65.536 k 53 131.072 k 30

Min (words) - Max (words)

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16.0 93 128.0 353 256.0 457 512.0 233 1000.0 198 2000.0 248 4000.0 206 8000.0 193 16000.0 112 32000.0 94 64000.0 53 128000.0 30

Min - Max

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SYNCHRONOUS 2,112

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70.0 °C 450 85.0 °C 1,170 105.0 °C 5 125.0 °C 636

Min (°C) - Max (°C)

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-55.0 °C 3 -40.0 °C 1,808 -25.0 °C 6 0.0 °C 444

Min (°C) - Max (°C)

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Organization (15)

128KX8 30 128X1 7 128X8 346 16KX1 1 16KX8 111 16X8 93 1KX8 198 256X8 457 2KX1 6 2KX8 242 32KX8 94 4KX8 206 512X8 233 64KX8 53 8KX8 193

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OPEN-DRAIN 874

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CERAMIC, GLASS-SEALED 4 PLASTIC/EPOXY 2,242 UNSPECIFIED 22

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BGA 5 DIE 22 DIP 357 HVSON 188 HVSSON 17 LSSOP 124 SON 2 SOP 1,028 TSOP 3 TSSOP 459 VFBGA 15 VSON 48

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BGA5,3X3,11/10 1 BGA8,3X5,17/10 1 DIE OR CHIP 17 DIP8(UNSPEC) 8 DIP8,.3 236 MODULE,8LEAD,.46 5 SO8(UNSPEC) 2 SOLCC8,.11,20 155 SOLCC8,.12,20 26 SOLCC8,.25 24 SOP14,.25 92 SOP5/6,.11,37 1 SOP8(UNSPEC) 7 SOP8,.19 68 SOP8,.23 135 SOP8,.24 2 SOP8,.25 293 SOP8,.3 113 TSOP5,.11,37 17 TSOP5/6,.11,37 51 TSOP6,.11,37 10 TSSOP14,.25 26 TSSOP5/6,.08 12 TSSOP8,.19 61 TSSOP8,.25 255

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RECTANGULAR 2,082 SQUARE 178 UNSPECIFIED 7

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GRID ARRAY 4 GRID ARRAY, VERY THIN PROFILE, FINE PITCH 16 IN-LINE 357 SMALL OUTLINE 1,057 SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE 177 SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH 17 SMALL OUTLINE, LOW PROFILE, SHRINK PITCH 120 SMALL OUTLINE, THIN PROFILE 3 SMALL OUTLINE, THIN PROFILE, SHRINK PITCH 452 SMALL OUTLINE, VERY THIN PROFILE 43 UNCASED CHIP 22

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16 words 16 64 words 2

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Power Supplies (2)

2/5 V 5 3/5 V 49

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Supply Voltage-Nom (Vsup) (8)

2.4 V 5 2.5 V 82 2.7 V 6 3 V 296 3.3 V 87 3.6 V 16 4.5 V 343 5 V 1,195

Min (V) - Max (V)

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