Parametric results for: 24C01-D under EEPROMs

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Manufacturer Part Number: 24c01d
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AT24C01D-XHM-B
Microchip Technology Inc
$0.2190 Yes Yes Active 1.024 kbit 8 128X8 3 V 1 MHz EEPROM ALSO OPERATES AT 1.7V TO 3.6V @0.4MHZ 100 1000000 Write/Erase Cycles 1010DDDR 1 1 128 128 words SYNCHRONOUS OPEN-DRAIN SERIAL 3 V I2C 800 nA 1 µA 3.6 V 2.5 V CMOS INDUSTRIAL 5 ms HARDWARE R-PDSO-G8 Not Qualified e4 1 85 °C -40 °C TS 16949 8 PLASTIC/EPOXY TSSOP TSSOP8,.25 RECTANGULAR SMALL OUTLINE, THIN PROFILE, SHRINK PITCH YES NICKEL PALLADIUM GOLD GULL WING 650 µm DUAL 1.2 mm 4.4 mm 3 mm MICROCHIP TECHNOLOGY INC TSSOP-8 compliant EAR99 8542.32.00.51 2016-12-12 Microchip
AT24C01D-XHM-T
Microchip Technology Inc
$0.2190 Yes Yes Active 1.024 kbit 8 128X8 3 V 1 MHz EEPROM 1.7V TO 3.6V @ 0.4MHz 100 1000000 Write/Erase Cycles 1010DDDR 1 1 128 128 words SYNCHRONOUS OPEN-DRAIN SERIAL 3 V I2C 800 nA 1 µA 3.6 V 2.5 V CMOS INDUSTRIAL 5 ms HARDWARE R-PDSO-G8 Not Qualified e4 1 85 °C -40 °C 260 40 8 PLASTIC/EPOXY TSSOP TSSOP8,.25 RECTANGULAR SMALL OUTLINE, THIN PROFILE, SHRINK PITCH YES NICKEL PALLADIUM GOLD GULL WING 650 µm DUAL 1.2 mm 4.4 mm 3 mm MICROCHIP TECHNOLOGY INC TSSOP-8 compliant EAR99 8542.32.00.51 2016-12-12 Microchip
AT24C01D-SSHM-T
Microchip Technology Inc
$0.2333 Yes Yes Active 1.024 kbit 8 128X8 3 V 1 MHz EEPROM ALSO OPERATES AT 1.7V TO 3.6V @0.4MHZ 100 1000000 Write/Erase Cycles 1010DDDR 1 1 128 128 words SYNCHRONOUS OPEN-DRAIN SERIAL 3 V I2C 800 nA 1 µA 3.6 V 2.5 V CMOS INDUSTRIAL 5 ms HARDWARE R-PDSO-G8 Not Qualified e3 1 85 °C -40 °C 260 TS 16949 40 8 PLASTIC/EPOXY SOP SOP8,.23 RECTANGULAR SMALL OUTLINE YES Matte Tin (Sn) GULL WING 1.27 mm DUAL 1.75 mm 4.925 mm 3.9 mm MICROCHIP TECHNOLOGY INC SOIC-8 compliant EAR99 8542.32.00.51 2016-12-12 Microchip
AT24C01D-SSHM-B
Microchip Technology Inc
$0.2467 Yes Yes Active 1.024 kbit 8 128X8 3 V 1 MHz EEPROM ALSO OPERATES AT 1.7V TO 3.6V @0.4MHZ 100 1000000 Write/Erase Cycles 1010DDDR 1 1 128 128 words SYNCHRONOUS OPEN-DRAIN SERIAL 3 V I2C 800 nA 1 µA 3.6 V 2.5 V CMOS INDUSTRIAL 5 ms HARDWARE R-PDSO-G8 Not Qualified e3 1 85 °C -40 °C TS 16949 8 PLASTIC/EPOXY SOP SOP8,.23 RECTANGULAR SMALL OUTLINE YES Matte Tin (Sn) GULL WING 1.27 mm DUAL 1.75 mm 4.925 mm 3.9 mm MICROCHIP TECHNOLOGY INC SOIC-8 compliant EAR99 8542.32.00.51 2016-12-12 Microchip
AT24C01D-MAHM-T
Microchip Technology Inc
$0.2555 Yes Yes Active 1.024 kbit 8 128X8 3 V 1 MHz EEPROM ALSO OPERATES AT 1.7V TO 3.6V @0.4MHZ 100 1000000 Write/Erase Cycles 1010DDDR 1 1 128 128 words SYNCHRONOUS OPEN-DRAIN SERIAL 3 V I2C 800 nA 1 µA 3.6 V 2.5 V CMOS INDUSTRIAL 5 ms HARDWARE R-PDSO-N8 Not Qualified e4 1 85 °C -40 °C 260 TS 16949 40 8 PLASTIC/EPOXY HVSON SOLCC8,.12,20 RECTANGULAR SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE YES NICKEL PALLADIUM GOLD NO LEAD 500 µm DUAL 600 µm 3 mm 2 mm MICROCHIP TECHNOLOGY INC UDFN-8 compliant EAR99 8542.32.00.51 2016-12-12 Microchip
AT24C01D-MAHM-E
Microchip Technology Inc
$0.2555 Yes Active 1.024 kbit 8 128X8 3 V 1 MHz EEPROM ALSO OPERATES AT 1.7V TO 3.6V @0.4MHZ 100 1000000 Write/Erase Cycles 1010DDDR 1 1 128 128 words SYNCHRONOUS OPEN-DRAIN SERIAL 3 V I2C 800 nA 1 µA 3.6 V 2.5 V CMOS INDUSTRIAL 5 ms HARDWARE R-PDSO-N8 e4 1 85 °C -40 °C 260 TS 16949 40 8 PLASTIC/EPOXY HVSON SOLCC8,.12,20 RECTANGULAR SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE YES NICKEL PALLADIUM GOLD NO LEAD 500 µm DUAL 600 µm 3 mm 2 mm MICROCHIP TECHNOLOGY INC UDFN-8 compliant EAR99 8542.32.00.51 2016-12-12 Microchip
AT24C01D-PUM
Microchip Technology Inc
$0.4147 Yes Yes Active 1.024 kbit 8 128X8 3 V 1 MHz EEPROM ALSO OPERATES AT 1.7V TO 3.6V @0.4MHZ 100 1000000 Write/Erase Cycles 1010DDDR 1 1 128 128 words SYNCHRONOUS OPEN-DRAIN SERIAL 3 V I2C 800 nA 1 µA 3.6 V 2.5 V CMOS INDUSTRIAL 5 ms HARDWARE R-PDIP-T8 Not Qualified e3 85 °C -40 °C TS 16949 8 PLASTIC/EPOXY DIP DIP8,.3 RECTANGULAR IN-LINE NO MATTE TIN THROUGH-HOLE 2.54 mm DUAL 5.334 mm 9.271 mm 7.62 mm MICROCHIP TECHNOLOGY INC DIP-8 compliant EAR99 8542.32.00.51 2016-12-12 Microchip
M24C01-DW3/G
STMicroelectronics
Check for Price Yes Yes Obsolete 1.024 kbit 8 128X8 5 V 400 kHz EEPROM 40 1000000 Write/Erase Cycles 1010DDDR 1 128 128 words SYNCHRONOUS SERIAL I2C 5 µA 3 µA 5.5 V 4.5 V CMOS AUTOMOTIVE 10 ms HARDWARE R-PDSO-G8 Not Qualified e4 1 125 °C -40 °C AEC-Q100 8 PLASTIC/EPOXY TSSOP TSSOP8,.25 RECTANGULAR SMALL OUTLINE, THIN PROFILE, SHRINK PITCH YES NICKEL PALLADIUM GOLD GULL WING 650 µm DUAL 1.2 mm 4.4 mm 3 mm STMICROELECTRONICS TSSOP, TSSOP8,.25 compliant EAR99 8542.32.00.51 SOIC 8
M24C01-DW1
STMicroelectronics
Check for Price Yes Yes Obsolete 1.024 kbit 8 128X8 5 V 5 V 400 kHz EEPROM 40 1000000 Write/Erase Cycles 1010DDDR 1 128 128 words SYNCHRONOUS OPEN-DRAIN SERIAL I2C 1 µA 2 µA 5.5 V 4.5 V CMOS COMMERCIAL 5 ms HARDWARE R-PDSO-G8 Not Qualified e0 1 70 °C 260 NOT SPECIFIED 8 PLASTIC/EPOXY TSSOP TSSOP8,.25 RECTANGULAR SMALL OUTLINE, THIN PROFILE, SHRINK PITCH YES Tin/Lead (Sn/Pb) GULL WING 650 µm DUAL 1.2 mm 4.4 mm 3 mm STMICROELECTRONICS TSSOP, TSSOP8,.25 compliant SOIC 8
M24C01-DW3P/W
STMicroelectronics
Check for Price Yes Yes Obsolete 1.024 kbit 8 128X8 5 V 400 kHz EEPROM 40 1000000 Write/Erase Cycles 1010DDDR 1 128 128 words SYNCHRONOUS SERIAL I2C 5 µA 3 µA 5.5 V 4.5 V CMOS AUTOMOTIVE 10 ms HARDWARE R-PDSO-G8 Not Qualified e4 1 125 °C -40 °C AEC-Q100 8 PLASTIC/EPOXY TSSOP TSSOP8,.25 RECTANGULAR SMALL OUTLINE, THIN PROFILE, SHRINK PITCH YES NICKEL PALLADIUM GOLD GULL WING 650 µm DUAL 1.2 mm 4.4 mm 3 mm STMICROELECTRONICS 0.169 INCH, LEAD FREE, TSSOP-8 compliant EAR99 8542.32.00.51 SOIC 8