Parametric results for: 25LC640T-E/ST under EEPROMs

All Filters Additional Feature Clock Frequency-Max (fCLK) Data Retention Time-Min Endurance JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Package Body Material Package Code Package Equivalence Code Package Shape Package Style Supply Voltage-Nom (Vsup)

1000K ERASE/WRITE CYCLES; DATA RETENTION > 200 YEARS 2

2 hits Apply

Clock Frequency-Max (fCLK) (1)

3 MHz 2

2 hits Apply

200 2

2 hits Apply

100000.0 Write/Erase Cycles 1

2 hits Apply

R-PDSO-G8 2

2 hits Apply

e3 2

2 hits Apply

4.4 mm 2

2 hits Apply

Manufacturer (1)

Microchip Technology Inc 2

2 hits Apply

Memory Density (1)

65.536 kbit 2

2 hits Apply

EEPROM 2

2 hits Apply

Memory Width (1)

8 2

2 hits Apply

1 2

2 hits Apply

1.0 2

2 hits Apply

8 2

2 hits Apply

8.192 k 2

2 hits Apply

8000.0 2

2 hits Apply

SYNCHRONOUS 2

2 hits Apply

125.0 °C 2

2 hits Apply

-40.0 °C 2

2 hits Apply

Organization (1)

8KX8 2

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

TSSOP 2

2 hits Apply

TSSOP8,.25 1

2 hits Apply

RECTANGULAR 2

2 hits Apply

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH 2

2 hits Apply

Supply Voltage-Nom (Vsup) (1)

5 V 2

2 hits Apply