Parametric results for: 25c32: under EEPROMs

All Filters Additional Feature Clock Frequency-Max (fCLK) Data Retention Time-Min Endurance JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Power Supplies Supply Voltage-Nom (Vsup)

100 YEAR DATA RETENTION 2 1000K ERASE/WRITE CYCLES; DATA RETENTION > 200 YEARS 34 1M ENDURANCE CYCLE; 200 YEARS DATA RETENTION 10 ALSO OPERTAE AT 10MHZ 1 ALSO OPERTAE AT 5MHZ AND 10 MHZ 1 DATA RETENTION >200 YEARS; ESD PROTECTION >4KV; 1000K ENDURANCE CYCLES 20 IT ALSO OPERATES AT 0.1 MHZ AT 2.5 TO 6 V SUPPLY VOLTAGE 2 IT ALSO OPERATES AT 10 MHZ FREQUENCY AT 2.5 TO 4.5 V SUPPLY VOLTAGE 5 SEATED HGT-NOM 1

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Clock Frequency-Max (fCLK) (9)

400 kHz 2 500 kHz 8 1 MHz 88 2 MHz 10 2.1 MHz 8 3 MHz 180 5 MHz 42 10 MHz 129 20 MHz 8

Min (MHz) - Max (MHz)

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100 287 200 53

Min - Max

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100000.0 Write/Erase Cycles 8 1000000.0 Write/Erase Cycles 308

Min (Write/EraseCycles) - Max (Write/EraseCycles)

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R-GDIP-T8 4 R-PBGA-B6 1 R-PDIP-T8 62 R-PDSO-F8 1 R-PDSO-G14 115 R-PDSO-G16 48 R-PDSO-G20 35 R-PDSO-G5 6 R-PDSO-G8 213 R-PDSO-N8 5 R-XDSO-N8 2 S-PDFP-F8 2 S-PDSO-G8 1 S-PQCC-N8 2 S-XDFP-F8 2 S-XQCC-N8 2

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e0 230 e3 158 e4 16

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1.47 mm 1 2.23 mm 1 2.9 mm 2 2.95 mm 6 3 mm 7 4.4 mm 38 4.9 mm 72 4.9025 mm 4 4.925 mm 6 5 mm 59 5.02 mm 3 5.08 mm 4 6.477 mm 4 6.5 mm 35 9.27 mm 5 9.271 mm 3 9.3218 mm 4 9.325 mm 8 9.59 mm 16 9.9 mm 6

Min (mm) - Max (mm)

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Manufacturer (11)

ABLIC Inc. 7 Adesto Technologies Corporation 15 Catalyst Semiconductor 269 Dialog Semiconductor GmbH 4 Force Technologies Ltd 16 Giantec Semiconductor Inc 14 Integrated Silicon Solution Inc 47 Microchip Technology Inc 83 onsemi 104 Seiko Instruments Inc 1 Twilight Technology Inc 14

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Memory Density (2)

32.768 kbit 499 33.5544 Mbit 2

Min (bit) - Max (bit)

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EEPROM 502

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Memory Width (2)

1 15 8 486

Min - Max

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1 73 3 2

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1.0 481

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1 14

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14 115 16 48 20 35 5 6 6 1 8 296

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4.096 k 484 32.768 k 15 4.1943 M 2

Min (words) - Max (words)

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4000.0 484 32000.0 15 4000000.0 2

Min - Max

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SYNCHRONOUS 481

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70.0 °C 119 85.0 °C 173 105.0 °C 97 125.0 °C 100 150.0 °C 4 175.0 °C 4 200.0 °C 4

Min (°C) - Max (°C)

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-55.0 °C 16 -40.0 °C 366 0.0 °C 119

Min (°C) - Max (°C)

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Organization (3)

32KX1 15 4KX8 484 4MX8 2

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3-STATE 20

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CERAMIC, GLASS-SEALED 4 PLASTIC/EPOXY 491 UNSPECIFIED 6

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DFP 4 DIP 66 HVQCCN 1 HVSON 5 LSSOP 8 QCCN 4 SON 1 SOP 228 TSSOP 180 VFBGA 1 VSOF 1 VSSOP 2

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DIP8,.3 26 SOLCC8,.11,20 1 SOLCC8,.12,20 2 SOP16,.25 48 SOP8,.23 6 SOP8,.25 80 TSSOP14,.25 84 TSSOP20,.25 35 TSSOP8,.19 1 TSSOP8,.25 25

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RECTANGULAR 492 SQUARE 9

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CHIP CARRIER 4 FLATPACK 4 GRID ARRAY, VERY THIN PROFILE, FINE PITCH 1 IN-LINE 66 SMALL OUTLINE 229 SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE 4 SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH 2 SMALL OUTLINE, LOW PROFILE, SHRINK PITCH 8 SMALL OUTLINE, THIN PROFILE, SHRINK PITCH 180 SMALL OUTLINE, VERY THIN PROFILE 1 SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH 2

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Power Supplies (1)

3/5 V 9

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Supply Voltage-Nom (Vsup) (3)

2.5 V 24 3.3 V 11 5 V 436

Min (V) - Max (V)

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