Parametric results for: 28c64a under EEPROMs

All Filters Access Time-Max Additional Feature Command User Interface Data Polling Data Retention Time-Min Endurance JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Page Size Supply Voltage-Nom (Vsup) Access Time-Max (11)

70 ns 6 90 ns 11 110 ns 7 120 ns 50 130 ns 1 150 ns 113 170 ns 6 200 ns 118 250 ns 100 300 ns 2 350 ns 2

Min (ns) - Max (ns)

418 hits Apply

10000 ERASE/PROGRAM CYCLES; DATA RETENTION > 10 YEARS 9 AUTOMATIC WRITE 44 AUTOMATIC WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION = 10 YEARS 4 AUTOMATIC WRITE; BULK ERASE; 10K ERASE/WRITE CYCLES MIN.; 1MS BYTE WRITE; DATA RETENTION > 10 YEARS 55 AUTOMATIC WRITE; BULK ERASE; DATA RETENTION > 10 YEARS 66 AUTOMATIC WRITE; PAGE WRITE 26 MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION 7 PAGE WRITE 8

418 hits Apply

NO 373

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YES 373

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10 133 40 7

Min - Max

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100000.0 Write/Erase Cycles 22

418 hits Apply

R-CQCC-N32 21 R-GDIP-T28 22 R-PDIP-T28 73 R-PDSO-G28 154 R-PQCC-J32 69 R-XDFP-F28 6 R-XDIP-T28 35 R-XQCC-N32 21 X-XUUC-N27 2

418 hits Apply

e0 317 e3 4

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11.8 mm 36 13.97 mm 56 13.995 mm 2 17.5 mm 2 17.9 mm 14 18.4 mm 24 35.725 mm 6 36.02 mm 1 36.32 mm 12 36.695 mm 6 36.7 mm 4 36.83 mm 13 37.1 mm 1

Min (mm) - Max (mm)

418 hits Apply

Manufacturer (14)

Catalyst Semiconductor 48 Exel Microelectronics Inc 21 LAPIS Semiconductor Co Ltd 3 LSI Corporation 12 Microchip Technology Inc 232 Mitsubishi Electric 8 National Semiconductor Corporation 4 OKI Electric Industry Co Ltd 2 Rochester Electronics LLC 1 Samsung Semiconductor 16 STMicroelectronics 7 Texas Instruments 8 Turbo Ic Inc 48 Vishay Semiconductors 8

418 hits Apply

Memory Density (1)

65.536 kbit 418

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EEPROM 418

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Memory Width (1)

8 418

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3 1 NOT SPECIFIED 1

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1.0 267

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27 2 28 290 32 123

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8.192 k 418

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8000.0 418

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ASYNCHRONOUS 265

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70.0 °C 190 85.0 °C 158 125.0 °C 68

Min (°C) - Max (°C)

418 hits Apply

-55.0 °C 68 -40.0 °C 158 0.0 °C 190

Min (°C) - Max (°C)

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Organization (1)

8KX8 418

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3-STATE 214

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CERAMIC 62 CERAMIC, GLASS-SEALED 22 CERAMIC, METAL-SEALED COFIRED 21 PLASTIC/EPOXY 308 UNSPECIFIED 2

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DFP 6 DIE 2 DIP 129 QCCJ 81 QCCN 42 SOP 83 TSOP 12 TSOP1 58 TSOP1-R 2

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DIE OR CHIP 1 DIP28(UNSPEC) 17 DIP28,.6 106 FL28,.4 6 LCC32,.45X.55 42 LDCC32(UNSPEC) 12 LDCC32,.5X.6 62 SOP28(UNSPEC) 12 SOP28,.4 38 SOP28,.45 7 SOP28,.5 8 TSOP28(UNSPEC) 12 TSSOP28,.46,20 4 TSSOP28,.53,22 24 TSSOP28/32,.8,20 18 WAFER 4

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RECTANGULAR 401 UNSPECIFIED 2

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CHIP CARRIER 123 FLATPACK 6 IN-LINE 130 SMALL OUTLINE 82 SMALL OUTLINE, THIN PROFILE 72 UNCASED CHIP 2

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32 words 67 64 words 102

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Supply Voltage-Nom (Vsup) (2)

2.5 V 2 5 V 416

Min (V) - Max (V)

418 hits Apply