Parametric results for: 2N2904AL under Power Bipolar Transistors

All Filters Case Connection Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

COLLECTOR 21

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Collector Current-Max (IC) (1)

600 mA 40

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8 pF 6

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Collector-Emitter Voltage-Max (1)

60 V 39

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Configuration (1)

SINGLE 40

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DC Current Gain-Min (hFE) (1)

40.0 40

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TO-205AA 8 TO-39 15 TO-5 10

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O-MBCY-W3 39

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e0 12 e4 4

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Manufacturer (10)

CRYSTALONICS Inc 3 Defense Logistics Agency 4 Microchip Technology Inc 1 Microsemi Corporation (now Microchip) 11 New England Semiconductor 5 Semicoa Semiconductors 12 Silicon Transistor Corporation 4 TT Electronics Power and Hybrid / Semelab Limited 4 TT Electronics Resistors 4 VPT Components 6

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Number of Elements (1)

1 40

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Number of Terminals (1)

3 39

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175.0 °C 7 200.0 °C 16

Min (°C) - Max (°C)

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-65.0 °C 6

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METAL 39

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ROUND 39

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CYLINDRICAL 39

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Active 19 Contact Manufacturer 12 Obsolete 5 Transferred 18

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No 7 Yes 2

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NOT SPECIFIED 10

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Polarity/Channel Type (1)

PNP 40

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800 mW 6

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600 mW 8 3 W 6

Min (W) - Max (W)

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Surface Mount (1)

NO 40

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Transition Frequency-Nom (fT) (1)

200 MHz 16

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